STPSC12065G2-TR
  • Share:

STMicroelectronics STPSC12065G2-TR

Manufacturer No:
STPSC12065G2-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
650 V POWER SCHOTTKY SILICON CAR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC12065G2-TR is a high-performance power Schottky diode manufactured by STMicroelectronics. This silicon carbide (SiC) diode is designed to offer superior performance in various power management applications. It features a 650 V rating and can handle a maximum continuous forward current of 12 A, making it suitable for demanding environments. The diode is packaged in a D2PAK HV package, which is surface mountable, and it operates over a wide temperature range from -40°C to 175°C.

Key Specifications

Parameter Value Unit
Brand STMicroelectronics
Mounting Type Surface Mount
Package Type D2PAK HV
Peak Reverse Repetitive Voltage (VRRM) 650 V
Maximum Continuous Forward Current (IF(AV)) 12 A
Diode Configuration Single
Pin Count 3
Number of Elements per Chip 1
Operating Junction Temperature (Tj) -40°C to 175°C °C
Forward Voltage Drop (VF) at IF = 12 A 1.30 - 1.45 V
Reverse Leakage Current (IR) at VR = VRRM 150 µA µA

Key Features

  • High Performance SiC Schottky Diode: Manufactured using a silicon carbide substrate, offering high efficiency and robustness.
  • No Recovery Time: The Schottky construction ensures no recovery time at turn-off, reducing ringing and improving overall system performance.
  • High Forward Surge Capability: Capable of handling high surge currents, ensuring good robustness during transient phases.
  • Wide Operating Temperature Range: Operates from -40°C to 175°C, making it suitable for a variety of applications.
  • Low Forward Voltage Drop: Typical forward voltage drop of 1.30 - 1.45 V at 12 A, reducing power losses.
  • RoHS Compliant and Eco-Friendly Packaging: Packaged in an EcoPack2 compliant D2PAK HV package.

Applications

  • Power Factor Correction (PFC): Especially suited for use in PFC applications, enhancing performance in hard switching conditions.
  • DC/DC Converters: Ideal for use in DC/DC converters due to its high efficiency and low power losses.
  • Automotive Systems: Qualified for automotive applications, offering reliability and robustness in demanding environments.
  • Industrial Power Supplies: Suitable for industrial power supplies requiring high voltage and current handling capabilities.

Q & A

  1. What is the peak reverse repetitive voltage of the STPSC12065G2-TR?

    The peak reverse repetitive voltage (VRRM) is 650 V.

  2. What is the maximum continuous forward current of the STPSC12065G2-TR?

    The maximum continuous forward current (IF(AV)) is 12 A.

  3. What is the operating junction temperature range of the STPSC12065G2-TR?

    The operating junction temperature range is from -40°C to 175°C.

  4. What type of diode is the STPSC12065G2-TR?

    The STPSC12065G2-TR is a silicon carbide (SiC) Schottky diode.

  5. What is the typical forward voltage drop of the STPSC12065G2-TR at 12 A?

    The typical forward voltage drop (VF) at 12 A is 1.30 - 1.45 V.

  6. Is the STPSC12065G2-TR RoHS compliant?

    Yes, the STPSC12065G2-TR is RoHS compliant and packaged in an EcoPack2 compliant D2PAK HV package.

  7. What are the common applications of the STPSC12065G2-TR?

    Common applications include Power Factor Correction (PFC), DC/DC converters, automotive systems, and industrial power supplies.

  8. What is the package type of the STPSC12065G2-TR?

    The package type is D2PAK HV.

  9. Does the STPSC12065G2-TR have any recovery time at turn-off?

    No, the Schottky construction ensures no recovery time at turn-off.

  10. What is the reverse leakage current of the STPSC12065G2-TR at VRRM?

    The reverse leakage current (IR) at VRRM is 150 µA.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):12A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 12 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:150 µA @ 650 V
Capacitance @ Vr, F:750pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$4.46
194

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STL6P3LLH6
STL6P3LLH6
STMicroelectronics
MOSFET P-CH 30V 6A POWERFLAT
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
TDA7439DS13TR
TDA7439DS13TR
STMicroelectronics
IC AUDIO TONE PROCESSOR 28SO
STM32L071RZT6
STM32L071RZT6
STMicroelectronics
IC MCU 32BIT 192KB FLASH 64LQFP
TDA2822M
TDA2822M
STMicroelectronics
IC AMP AB MONO/STER 2W 8MINI DIP
LM258PT
LM258PT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8TSSOP
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
AST1S31HF
AST1S31HF
STMicroelectronics
IC REG BUCK ADJ 3A 8VFDFPN