STPSC12065G2-TR
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STMicroelectronics STPSC12065G2-TR

Manufacturer No:
STPSC12065G2-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
650 V POWER SCHOTTKY SILICON CAR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC12065G2-TR is a high-performance power Schottky diode manufactured by STMicroelectronics. This silicon carbide (SiC) diode is designed to offer superior performance in various power management applications. It features a 650 V rating and can handle a maximum continuous forward current of 12 A, making it suitable for demanding environments. The diode is packaged in a D2PAK HV package, which is surface mountable, and it operates over a wide temperature range from -40°C to 175°C.

Key Specifications

Parameter Value Unit
Brand STMicroelectronics
Mounting Type Surface Mount
Package Type D2PAK HV
Peak Reverse Repetitive Voltage (VRRM) 650 V
Maximum Continuous Forward Current (IF(AV)) 12 A
Diode Configuration Single
Pin Count 3
Number of Elements per Chip 1
Operating Junction Temperature (Tj) -40°C to 175°C °C
Forward Voltage Drop (VF) at IF = 12 A 1.30 - 1.45 V
Reverse Leakage Current (IR) at VR = VRRM 150 µA µA

Key Features

  • High Performance SiC Schottky Diode: Manufactured using a silicon carbide substrate, offering high efficiency and robustness.
  • No Recovery Time: The Schottky construction ensures no recovery time at turn-off, reducing ringing and improving overall system performance.
  • High Forward Surge Capability: Capable of handling high surge currents, ensuring good robustness during transient phases.
  • Wide Operating Temperature Range: Operates from -40°C to 175°C, making it suitable for a variety of applications.
  • Low Forward Voltage Drop: Typical forward voltage drop of 1.30 - 1.45 V at 12 A, reducing power losses.
  • RoHS Compliant and Eco-Friendly Packaging: Packaged in an EcoPack2 compliant D2PAK HV package.

Applications

  • Power Factor Correction (PFC): Especially suited for use in PFC applications, enhancing performance in hard switching conditions.
  • DC/DC Converters: Ideal for use in DC/DC converters due to its high efficiency and low power losses.
  • Automotive Systems: Qualified for automotive applications, offering reliability and robustness in demanding environments.
  • Industrial Power Supplies: Suitable for industrial power supplies requiring high voltage and current handling capabilities.

Q & A

  1. What is the peak reverse repetitive voltage of the STPSC12065G2-TR?

    The peak reverse repetitive voltage (VRRM) is 650 V.

  2. What is the maximum continuous forward current of the STPSC12065G2-TR?

    The maximum continuous forward current (IF(AV)) is 12 A.

  3. What is the operating junction temperature range of the STPSC12065G2-TR?

    The operating junction temperature range is from -40°C to 175°C.

  4. What type of diode is the STPSC12065G2-TR?

    The STPSC12065G2-TR is a silicon carbide (SiC) Schottky diode.

  5. What is the typical forward voltage drop of the STPSC12065G2-TR at 12 A?

    The typical forward voltage drop (VF) at 12 A is 1.30 - 1.45 V.

  6. Is the STPSC12065G2-TR RoHS compliant?

    Yes, the STPSC12065G2-TR is RoHS compliant and packaged in an EcoPack2 compliant D2PAK HV package.

  7. What are the common applications of the STPSC12065G2-TR?

    Common applications include Power Factor Correction (PFC), DC/DC converters, automotive systems, and industrial power supplies.

  8. What is the package type of the STPSC12065G2-TR?

    The package type is D2PAK HV.

  9. Does the STPSC12065G2-TR have any recovery time at turn-off?

    No, the Schottky construction ensures no recovery time at turn-off.

  10. What is the reverse leakage current of the STPSC12065G2-TR at VRRM?

    The reverse leakage current (IR) at VRRM is 150 µA.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):12A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 12 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:150 µA @ 650 V
Capacitance @ Vr, F:750pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
Operating Temperature - Junction:-40°C ~ 175°C
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