STPSC10H065DLF
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STMicroelectronics STPSC10H065DLF

Manufacturer No:
STPSC10H065DLF
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODES AND RECTIFIERS
Delivery:
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Product Introduction

Overview

The STPSC10H065DLF is a high-performance power Schottky diode manufactured by STMicroelectronics. This 10 A, 650 V silicon carbide (SiC) diode is designed for ultra-high performance applications. The use of a silicon carbide substrate allows for a Schottky diode structure with a 650 V rating, eliminating recovery at turn-off and minimizing capacitive turn-off behavior, which is independent of temperature. The diode is packaged in a low-profile PowerFLAT 8x8 HV package, making it suitable for applications requiring low drop forward voltage and high surge capabilities in compact spaces.

Key Specifications

ParameterValue
Current Rating (IF)10 A
Reverse Voltage (VRRM)650 V
Forward Voltage Drop (VF)Very low (improved by 200 mV compared to standard silicon diodes)
Package TypePowerFLAT 8x8 HV
Package Height
Operating Temperature Range-40°C to 175°C
Junction Temperature (TJ)175°C (max)
Thermal Resistance (Rth)As low as 1.7°C/W
Creepage Distance2.75 mm
RoHS ComplianceEcopack2

Key Features

  • No or negligible reverse recovery
  • Temperature-independent switching behavior
  • High forward surge capability
  • Very low drop forward voltage
  • Power-efficient product
  • ECOPACK2 compliant component
  • High creepage package
  • Less than 1 mm height package

Applications

The STPSC10H065DLF is recommended for various high-performance applications, including:

  • Telecom and network systems
  • Industrial domains
  • Renameable energy systems
  • Solar inverters
  • Motor drives
  • Uninterruptible power supplies (UPS)
  • Electrical vehicle circuits

Q & A

  1. What is the current rating of the STPSC10H065DLF?
    The current rating of the STPSC10H065DLF is 10 A.
  2. What is the reverse voltage rating of the STPSC10H065DLF?
    The reverse voltage rating of the STPSC10H065DLF is 650 V.
  3. What type of package is used for the STPSC10H065DLF?
    The STPSC10H065DLF is packaged in a PowerFLAT 8x8 HV package.
  4. What are the key benefits of using a silicon carbide (SiC) diode like the STPSC10H065DLF?
    The key benefits include very low forward voltage drop, no or negligible reverse recovery, and temperature-independent switching behavior.
  5. What are the typical applications for the STPSC10H065DLF?
    Typical applications include telecom and network systems, industrial domains, renewable energy systems, solar inverters, motor drives, UPS, and electrical vehicle circuits.
  6. Is the STPSC10H065DLF RoHS compliant?
    Yes, the STPSC10H065DLF is ECOPACK2 compliant, which means it is RoHS compliant.
  7. What is the maximum junction temperature for the STPSC10H065DLF?
    The maximum junction temperature for the STPSC10H065DLF is 175°C.
  8. How does the thermal resistance of the STPSC10H065DLF compare to other diodes?
    The thermal resistance of the STPSC10H065DLF is as low as 1.7°C/W.
  9. What is the creepage distance of the STPSC10H065DLF package?
    The creepage distance of the STPSC10H065DLF package is 2.75 mm.
  10. Is the STPSC10H065DLF suitable for high surge current applications?
    Yes, the STPSC10H065DLF has high forward surge capability, making it suitable for high surge current applications.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.55 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:100 µA @ 650 V
Capacitance @ Vr, F:595pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PowerFlat™ (8x8) HV
Operating Temperature - Junction:-40°C ~ 175°C
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Similar Products

Part Number STPSC10H065DLF STPSC10065DLF
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V
Current - Average Rectified (Io) 10A 10A
Voltage - Forward (Vf) (Max) @ If 1.55 V @ 10 A 1.45 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns
Current - Reverse Leakage @ Vr 100 µA @ 650 V 130 mA @ 650 V
Capacitance @ Vr, F 595pF @ 0V, 1MHz 670pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C

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