M95128-DRDW3TP/K
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STMicroelectronics M95128-DRDW3TP/K

Manufacturer No:
M95128-DRDW3TP/K
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IC EEPROM 128KBIT SPI 8TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The M95128-DRDW3TP/K is an Automotive grade 128-Kbit serial EEPROM device produced by STMicroelectronics. It operates up to 145°C and is compliant with the very high level of reliability defined by the Automotive standard AEC-Q100 grade 0. The device is accessed through a simple serial SPI compatible interface that can run up to 20 MHz. The memory array is based on advanced true EEPROM technology, organized as 256 pages of 64 bytes each, with embedded Error Correction Code logic to enhance data integrity. Additionally, the device includes an Identification Page for storing ST device identification and application-specific parameters, which can be permanently locked in read-only mode.

Key Specifications

Parameter Value
Memory Capacity 128 Kbit (16 Kbyte) of EEPROM
Page Size 64 bytes
Write Protection Block: 1/4, 1/2 or whole memory
Identification Page 64 bytes (includes ST device identification and application parameters)
Operating Temperature Up to 125 °C (VCC from 1.7 V to 5.5 V), up to 145 °C (VCC from 2.5 V to 5.5 V)
Clock Frequency 20 MHz for VCC ≥ 4.5 V, 10 MHz for VCC ≥ 2.5 V, 5 MHz for VCC ≥ 1.7 V
Write Cycle Time Byte Write within 4 ms, Page Write within 4 ms
Write Cycle Endurance 4 million Write cycles at 25 °C, 1.2 million Write cycles at 85 °C, 600 k Write cycles at 125 °C, 400 k Write cycles at 145 °C
Data Retention 50 years at 125 °C, 100 years at 25 °C
ESD Protection 4000 V (Human Body Model)
Packages RoHS-compliant and halogen-free (ECOPACK2®), TSSOP8 (DW), SO8 (MN), WFDFPN8 (MF)

Key Features

  • Compatible with the Serial Peripheral Interface (SPI) bus
  • Memory array: 128 Kbit (16 Kbyte) of EEPROM, organized as 256 pages of 64 bytes each
  • Write protection by block: 1/4, 1/2 or whole memory
  • Additional Write lockable Identification Page (64 bytes)
  • Extended temperature and voltage ranges: up to 125 °C (VCC from 1.7 V to 5.5 V), up to 145 °C (VCC from 2.5 V to 5.5 V)
  • High speed clock frequency: 20 MHz for VCC ≥ 4.5 V, 10 MHz for VCC ≥ 2.5 V, 5 MHz for VCC ≥ 1.7 V
  • Schmitt trigger inputs for noise filtering
  • Short Write cycle time: Byte Write within 4 ms, Page Write within 4 ms
  • Write cycle endurance: 4 million Write cycles at 25 °C, 1.2 million Write cycles at 85 °C, 600 k Write cycles at 125 °C, 400 k Write cycles at 145 °C
  • Data retention: 50 years at 125 °C, 100 years at 25 °C
  • ESD Protection (Human Body Model): 4000 V
  • RoHS-compliant and halogen-free packages (ECOPACK2®)

Applications

The M95128-DRDW3TP/K is designed for use in automotive and other high-reliability applications where data integrity and durability are critical. It is suitable for various automotive systems, including engine control units, transmission control units, and other electronic control modules. Additionally, it can be used in industrial and consumer electronics that require robust and reliable non-volatile memory solutions.

Q & A

  1. What is the memory capacity of the M95128-DRDW3TP/K?

    The M95128-DRDW3TP/K has a memory capacity of 128 Kbit (16 Kbyte) of EEPROM.

  2. What is the operating temperature range of the M95128-DRDW3TP/K?

    The device operates up to 125 °C (VCC from 1.7 V to 5.5 V) and up to 145 °C (VCC from 2.5 V to 5.5 V).

  3. What is the clock frequency of the M95128-DRDW3TP/K?

    The clock frequency is 20 MHz for VCC ≥ 4.5 V, 10 MHz for VCC ≥ 2.5 V, and 5 MHz for VCC ≥ 1.7 V.

  4. How long does it take to write a byte or a page to the M95128-DRDW3TP/K?

    Both byte and page writes take within 4 ms.

  5. What is the write cycle endurance of the M95128-DRDW3TP/K?

    The write cycle endurance is 4 million Write cycles at 25 °C, 1.2 million Write cycles at 85 °C, 600 k Write cycles at 125 °C, and 400 k Write cycles at 145 °C.

  6. How long does the data retain in the M95128-DRDW3TP/K?

    Data retention is 50 years at 125 °C and 100 years at 25 °C.

  7. What kind of ESD protection does the M95128-DRDW3TP/K have?

    The device has 4000 V ESD protection (Human Body Model).

  8. What types of packages are available for the M95128-DRDW3TP/K?

    The device is available in TSSOP8 (DW), SO8 (MN), and WFDFPN8 (MF) packages, all of which are RoHS-compliant and halogen-free (ECOPACK2®).

  9. Is the M95128-DRDW3TP/K compliant with any specific automotive standards?

    Yes, it is compliant with the Automotive standard AEC-Q100 grade 0.

  10. Can the Identification Page be used for storing application-specific data?

    Yes, the Identification Page can be used to store application-specific data, which can later be permanently locked in read-only mode.

Product Attributes

Memory Type:Non-Volatile
Memory Format:EEPROM
Technology:EEPROM
Memory Size:128Kb (16K x 8)
Memory Interface:SPI
Clock Frequency:20 MHz
Write Cycle Time - Word, Page:4ms
Access Time:- 
Voltage - Supply:1.8V ~ 5.5V
Operating Temperature:-40°C ~ 125°C (TA)
Mounting Type:Surface Mount
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:8-TSSOP
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Similar Products

Part Number M95128-DRDW3TP/K M95128-DRDW8TP/K
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Memory Type Non-Volatile Non-Volatile
Memory Format EEPROM EEPROM
Technology EEPROM EEPROM
Memory Size 128Kb (16K x 8) 128Kb (16K x 8)
Memory Interface SPI SPI
Clock Frequency 20 MHz 20 MHz
Write Cycle Time - Word, Page 4ms 4ms
Access Time - -
Voltage - Supply 1.8V ~ 5.5V 1.8V ~ 5.5V
Operating Temperature -40°C ~ 125°C (TA) -40°C ~ 105°C (TA)
Mounting Type Surface Mount Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP 8-TSSOP

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