Overview
The M93C76-WMN6TP is a high-performance, non-volatile Electrically Erasable Programmable Read-Only Memory (EEPROM) device manufactured by STMicroelectronics. This component is part of the M93Cx6 series and features the industry-standard MICROWIRE™ bus protocol for serial access. The M93C76-WMN6TP offers an 8 Kbit memory capacity, which can be configured either in byte (x8) or word (x16) mode, providing flexibility in various applications. It operates within a voltage supply range of 2.5 V to 5.5 V and is designed to work efficiently in a wide temperature range from -40°C to +85°C.
Key Specifications
Parameter | Value |
---|---|
Memory Size | 8 Kbit (1024 bytes or 512 words) |
Supply Voltage | 2.5 V to 5.5 V (M93Cx6-W), 1.8 V to 5.5 V (M93Cx6-R) |
Clock Frequency | Up to 2 MHz |
Operating Temperature | -40°C to +85°C |
Package Type | SOIC-8, DFN8 (2 x 3 mm), TSSOP8 |
Write Cycle Endurance | 4,000,000 cycles at 25°C, 1,200,000 cycles at 85°C |
Data Retention | More than 200 years |
ESD Protection | Enhanced ESD/latch-up behavior |
Process Technology | CMOS |
Key Features
- High-performance operation with fast read/write access times
- Industry-standard MICROWIRE™ bus protocol for serial access
- Dual organization: byte (x8) or word (x16) mode
- Self-timed programming cycle with auto-erase: 5 ms
- READY/BUSY signal during programming
- Sequential read operation
- Enhanced ESD/latch-up behavior
- More than 4 million write cycles and over 200-year data retention
- RoHS compliant and halogen-free packages (ECOPACK2)
Applications
The M93C76-WMN6TP is suitable for a wide range of applications that require non-volatile memory, including but not limited to:
- Industrial control systems
- Automotive systems
- Consumer electronics
- Medical devices
- Telecommunication equipment
Q & A
- Q: What is the memory capacity of the M93C76-WMN6TP?
A: The M93C76-WMN6TP has an 8 Kbit memory capacity, which can be configured as 1024 bytes or 512 words. - Q: What is the operating voltage range for the M93C76-WMN6TP?
A: The M93C76-WMN6TP operates within a voltage supply range of 2.5 V to 5.5 V for M93Cx6-W devices and 1.8 V to 5.5 V for M93Cx6-R devices. - Q: What is the clock frequency of the M93C76-WMN6TP?
A: The clock frequency of the M93C76-WMN6TP is up to 2 MHz. - Q: What is the operating temperature range for the M93C76-WMN6TP?
A: The operating temperature range is from -40°C to +85°C. - Q: What types of packages are available for the M93C76-WMN6TP?
A: The M93C76-WMN6TP is available in SOIC-8, DFN8 (2 x 3 mm), and TSSOP8 packages. - Q: How many write cycles can the M93C76-WMN6TP endure?
A: The M93C76-WMN6TP can endure more than 4 million write cycles at 25°C and more than 1.2 million cycles at 85°C. - Q: What is the data retention period for the M93C76-WMN6TP?
A: The data retention period is more than 200 years. - Q: Is the M93C76-WMN6TP RoHS compliant?
A: Yes, the M93C76-WMN6TP is RoHS compliant and comes in halogen-free packages (ECOPACK2). - Q: How do I configure the memory array of the M93C76-WMN6TP?
A: The memory array can be configured either in byte (x8) or word (x16) mode using the organization select input (ORG). - Q: What is the purpose of the READY/BUSY signal in the M93C76-WMN6TP?
A: The READY/BUSY signal indicates the status of the programming cycle, helping to prevent data corruption during write operations.