BZW50-39BRL
  • Share:

STMicroelectronics BZW50-39BRL

Manufacturer No:
BZW50-39BRL
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
TVS DIODE 39VWM 90VC R6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BZW50-39BRL is a Transient Voltage Suppressor (TVS) diode from STMicroelectronics, designed to protect sensitive electronic equipment from electrostatic discharges and electrical overstress. This component is part of the BZW50 TVS series, which offers high power capability and fast response times to transient overvoltages. The BZW50-39BRL is specifically a bidirectional TVS diode, making it suitable for applications requiring protection against both positive and negative voltage surges.

Key Specifications

Parameter Value Unit
Peak Pulse Power Dissipation (10/1000 μs) 5000 W
Power Dissipation on Infinite Heatsink 6.5 W
Non-Repetitive Surge Peak Forward Current (Unidirectional) 500 A
Storage Temperature Range -65 to +175 °C
Operating Junction Temperature Range -55 to +175 °C
Maximum Lead Temperature for Soldering 260 °C
Stand-off Voltage (VRM) 39 V
Breakdown Voltage (VBR) 43.3 V
Clamping Voltage (VCL) at 10/1000 μs 69.4 V
Peak Pulse Current (IPP) at 10/1000 μs 72 A
Dynamic Resistance (RD) 0.063 Ω
Leakage Current @ VRM 5 µA

Key Features

  • High Power Capability: Up to 5000 W peak pulse power dissipation (10/1000 μs) and up to 60 kW (8/20 μs).
  • Fast Response Time: Instantaneous response to transient overvoltages, making it suitable for protecting voltage-sensitive devices such as MOS technology and low-voltage ICs.
  • Low Clamping Factor: Efficient clamping action to protect against overvoltages.
  • Unidirectional and Bidirectional Options: Available in both unidirectional and bidirectional configurations to suit various application needs.
  • High Junction Temperature: Operating junction temperature up to 175°C, ensuring reliability and stability over time.
  • Compliance with Standards: Complies with UL94 V0, J-STD-020 MSL level 1, J-STD-002, JESD 22-B102 E3, MIL-STD-750 method 2026, and IEC 61000-4-2 and IEC 61000-4-4 standards.

Applications

  • Protection of Voltage-Sensitive Devices: Ideal for protecting MOS technology, low-voltage ICs, and other sensitive electronic components from transient overvoltages.
  • Switch-Mode Power Supplies (SMPS): Suitable for use in high-end SMPS where low leakage current and high junction temperature are required.
  • Electrostatic Discharge (ESD) Protection: Effective in protecting against ESD according to IEC 61000-4-2 and MIL STD 883 Method 3015.
  • General Electronic Equipment: Can be used in various electronic systems requiring protection against electrical overstress and surges.

Q & A

  1. What is the peak pulse power dissipation of the BZW50-39BRL?

    The peak pulse power dissipation is 5000 W (10/1000 μs).

  2. What are the stand-off and breakdown voltages for the BZW50-39BRL?

    The stand-off voltage (VRM) is 39 V, and the breakdown voltage (VBR) is 43.3 V.

  3. What is the clamping voltage of the BZW50-39BRL at 10/1000 μs?

    The clamping voltage (VCL) at 10/1000 μs is 69.4 V.

  4. What is the maximum operating junction temperature of the BZW50-39BRL?

    The maximum operating junction temperature is 175°C.

  5. Is the BZW50-39BRL compliant with any industry standards?

    Yes, it complies with several standards including UL94 V0, J-STD-020 MSL level 1, and IEC 61000-4-2 and IEC 61000-4-4.

  6. What types of devices can the BZW50-39BRL protect?

    The BZW50-39BRL can protect voltage-sensitive devices such as MOS technology and low-voltage ICs.

  7. What is the dynamic resistance of the BZW50-39BRL?

    The dynamic resistance (RD) is 0.063 Ω.

  8. What is the leakage current at VRM for the BZW50-39BRL?

    The leakage current at VRM is 5 µA.

  9. Can the BZW50-39BRL be used in switch-mode power supplies?

    Yes, it is suitable for use in high-end SMPS where low leakage current and high junction temperature are required.

  10. What is the storage temperature range for the BZW50-39BRL?

    The storage temperature range is -65 to +175°C.

Product Attributes

Type:Zener
Unidirectional Channels:- 
Bidirectional Channels:1
Voltage - Reverse Standoff (Typ):39V
Voltage - Breakdown (Min):43.3V
Voltage - Clamping (Max) @ Ipp:90V
Current - Peak Pulse (10/1000µs):667A (8/20µs)
Power - Peak Pulse:5000W (5kW)
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:2400pF @ 1MHz
Operating Temperature:- 
Mounting Type:Through Hole
Package / Case:R-6, Axial
Supplier Device Package:R-6
0 Remaining View Similar

In Stock

$2.47
205

Please send RFQ , we will respond immediately.

Same Series
BZW50-15RL
BZW50-15RL
TVS DIODE 15VWM 35VC R6
BZW50-22
BZW50-22
TVS DIODE 22VWM 51VC R6
BZW50-27B
BZW50-27B
TVS DIODE 27VWM 62VC R6
BZW50-56B
BZW50-56B
TVS DIODE 56VWM 129VC R6
BZW50-82B
BZW50-82B
TVS DIODE 82VWM 189VC R6
BZW50-39B
BZW50-39B
TVS DIODE 39VWM 90VC R6
BZW50-12B
BZW50-12B
TVS DIODE 12VWM 28VC R6
BZW50-15B
BZW50-15B
TVS DIODE 15VWM 35VC R6
BZW50-68B
BZW50-68B
TVS DIODE 68VWM 157VC R6
BZW50-27RL
BZW50-27RL
TVS DIODE 27VWM 62VC R6
BZW50-39BRL
BZW50-39BRL
TVS DIODE 39VWM 90VC R6
BZW50-100
BZW50-100
TVS DIODE 100VWM 228VC R6

Similar Products

Part Number BZW50-39BRL BZW50-33BRL
Manufacturer STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active
Type Zener Zener
Unidirectional Channels - -
Bidirectional Channels 1 1
Voltage - Reverse Standoff (Typ) 39V 33V
Voltage - Breakdown (Min) 43.3V 36.6V
Voltage - Clamping (Max) @ Ipp 90V 76V
Current - Peak Pulse (10/1000µs) 667A (8/20µs) 789A (8/20µs)
Power - Peak Pulse 5000W (5kW) 5000W (5kW)
Power Line Protection No No
Applications General Purpose General Purpose
Capacitance @ Frequency 2400pF @ 1MHz 2875pF @ 1MHz
Operating Temperature - -
Mounting Type Through Hole Through Hole
Package / Case R-6, Axial R-6, Axial
Supplier Device Package R-6 R-6

Related Product By Categories

ESD8104MUTAG
ESD8104MUTAG
onsemi
TVS DIODE 3.3VWM 11.4VC 10UDFN
SZESD8351HT1G
SZESD8351HT1G
onsemi
TVS DIODE 3.3VWM 11.2VC SOD323
CM1293A-02SR
CM1293A-02SR
onsemi
TVS DIODE 3.3VWM 9.9VC SOT143-4
ESD7571N2T5G
ESD7571N2T5G
onsemi
TVS DIODE 5.3VWM 15VC 2X2DFN
PESD2CANFD24U-UX
PESD2CANFD24U-UX
Nexperia USA Inc.
TVS DIODE
SMA6F26AY
SMA6F26AY
STMicroelectronics
TVS DIODE 26VWM 42.1VC SMAFLAT
1.5KE120A-E3/54
1.5KE120A-E3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 102VWM 165VC 1.5KE
SMBJ5.0CA/54
SMBJ5.0CA/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
1.5KE120AE3/TR13
1.5KE120AE3/TR13
Microsemi Corporation
TVS DIODE 102VWM 165VC CASE-1
SMS24T1
SMS24T1
onsemi
TVS DIODE 24VWM 44VC SC74
SM15T15AHE3/57T
SM15T15AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SM15T200CAHM3/H
SM15T200CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB

Related Product By Brand

STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
STPS2H100U
STPS2H100U
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMB
STF13N60M2
STF13N60M2
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
STD14NM50N
STD14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A DPAK
TS944AIDT
TS944AIDT
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 14SO
TS914ID
TS914ID
STMicroelectronics
IC CMOS 4 CIRCUIT 14SO
VIPER100(022Y)
VIPER100(022Y)
STMicroelectronics
IC OFFLIN CONV FLBACK 5PENTAWATT
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
L79L15ACD13TR
L79L15ACD13TR
STMicroelectronics
IC REG LINEAR -15V 100MA 8SO
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA