BZW50-39BRL
  • Share:

STMicroelectronics BZW50-39BRL

Manufacturer No:
BZW50-39BRL
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
TVS DIODE 39VWM 90VC R6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BZW50-39BRL is a Transient Voltage Suppressor (TVS) diode from STMicroelectronics, designed to protect sensitive electronic equipment from electrostatic discharges and electrical overstress. This component is part of the BZW50 TVS series, which offers high power capability and fast response times to transient overvoltages. The BZW50-39BRL is specifically a bidirectional TVS diode, making it suitable for applications requiring protection against both positive and negative voltage surges.

Key Specifications

Parameter Value Unit
Peak Pulse Power Dissipation (10/1000 μs) 5000 W
Power Dissipation on Infinite Heatsink 6.5 W
Non-Repetitive Surge Peak Forward Current (Unidirectional) 500 A
Storage Temperature Range -65 to +175 °C
Operating Junction Temperature Range -55 to +175 °C
Maximum Lead Temperature for Soldering 260 °C
Stand-off Voltage (VRM) 39 V
Breakdown Voltage (VBR) 43.3 V
Clamping Voltage (VCL) at 10/1000 μs 69.4 V
Peak Pulse Current (IPP) at 10/1000 μs 72 A
Dynamic Resistance (RD) 0.063 Ω
Leakage Current @ VRM 5 µA

Key Features

  • High Power Capability: Up to 5000 W peak pulse power dissipation (10/1000 μs) and up to 60 kW (8/20 μs).
  • Fast Response Time: Instantaneous response to transient overvoltages, making it suitable for protecting voltage-sensitive devices such as MOS technology and low-voltage ICs.
  • Low Clamping Factor: Efficient clamping action to protect against overvoltages.
  • Unidirectional and Bidirectional Options: Available in both unidirectional and bidirectional configurations to suit various application needs.
  • High Junction Temperature: Operating junction temperature up to 175°C, ensuring reliability and stability over time.
  • Compliance with Standards: Complies with UL94 V0, J-STD-020 MSL level 1, J-STD-002, JESD 22-B102 E3, MIL-STD-750 method 2026, and IEC 61000-4-2 and IEC 61000-4-4 standards.

Applications

  • Protection of Voltage-Sensitive Devices: Ideal for protecting MOS technology, low-voltage ICs, and other sensitive electronic components from transient overvoltages.
  • Switch-Mode Power Supplies (SMPS): Suitable for use in high-end SMPS where low leakage current and high junction temperature are required.
  • Electrostatic Discharge (ESD) Protection: Effective in protecting against ESD according to IEC 61000-4-2 and MIL STD 883 Method 3015.
  • General Electronic Equipment: Can be used in various electronic systems requiring protection against electrical overstress and surges.

Q & A

  1. What is the peak pulse power dissipation of the BZW50-39BRL?

    The peak pulse power dissipation is 5000 W (10/1000 μs).

  2. What are the stand-off and breakdown voltages for the BZW50-39BRL?

    The stand-off voltage (VRM) is 39 V, and the breakdown voltage (VBR) is 43.3 V.

  3. What is the clamping voltage of the BZW50-39BRL at 10/1000 μs?

    The clamping voltage (VCL) at 10/1000 μs is 69.4 V.

  4. What is the maximum operating junction temperature of the BZW50-39BRL?

    The maximum operating junction temperature is 175°C.

  5. Is the BZW50-39BRL compliant with any industry standards?

    Yes, it complies with several standards including UL94 V0, J-STD-020 MSL level 1, and IEC 61000-4-2 and IEC 61000-4-4.

  6. What types of devices can the BZW50-39BRL protect?

    The BZW50-39BRL can protect voltage-sensitive devices such as MOS technology and low-voltage ICs.

  7. What is the dynamic resistance of the BZW50-39BRL?

    The dynamic resistance (RD) is 0.063 Ω.

  8. What is the leakage current at VRM for the BZW50-39BRL?

    The leakage current at VRM is 5 µA.

  9. Can the BZW50-39BRL be used in switch-mode power supplies?

    Yes, it is suitable for use in high-end SMPS where low leakage current and high junction temperature are required.

  10. What is the storage temperature range for the BZW50-39BRL?

    The storage temperature range is -65 to +175°C.

Product Attributes

Type:Zener
Unidirectional Channels:- 
Bidirectional Channels:1
Voltage - Reverse Standoff (Typ):39V
Voltage - Breakdown (Min):43.3V
Voltage - Clamping (Max) @ Ipp:90V
Current - Peak Pulse (10/1000µs):667A (8/20µs)
Power - Peak Pulse:5000W (5kW)
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:2400pF @ 1MHz
Operating Temperature:- 
Mounting Type:Through Hole
Package / Case:R-6, Axial
Supplier Device Package:R-6
0 Remaining View Similar

In Stock

$2.47
205

Please send RFQ , we will respond immediately.

Same Series
BZW50-33RL
BZW50-33RL
TVS DIODE 33VWM 76VC R6
BZW50-33B
BZW50-33B
TVS DIODE 33VWM 76VC R6
BZW50-180
BZW50-180
TVS DIODE 180VWM 410VC R6
BZW50-27B
BZW50-27B
TVS DIODE 27VWM 62VC R6
BZW50-120B
BZW50-120B
TVS DIODE 120VWM 274VC R6
BZW50-27
BZW50-27
TVS DIODE 27VWM 62VC R6
BZW50-56B
BZW50-56B
TVS DIODE 56VWM 129VC R6
BZW50-39B
BZW50-39B
TVS DIODE 39VWM 90VC R6
BZW50-15B
BZW50-15B
TVS DIODE 15VWM 35VC R6
BZW50-22B
BZW50-22B
TVS DIODE 22VWM 51VC R6
BZW50-56
BZW50-56
TVS DIODE 56VWM 129VC R6
BZW50-27RL
BZW50-27RL
TVS DIODE 27VWM 62VC R6

Similar Products

Part Number BZW50-39BRL BZW50-33BRL
Manufacturer STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active
Type Zener Zener
Unidirectional Channels - -
Bidirectional Channels 1 1
Voltage - Reverse Standoff (Typ) 39V 33V
Voltage - Breakdown (Min) 43.3V 36.6V
Voltage - Clamping (Max) @ Ipp 90V 76V
Current - Peak Pulse (10/1000µs) 667A (8/20µs) 789A (8/20µs)
Power - Peak Pulse 5000W (5kW) 5000W (5kW)
Power Line Protection No No
Applications General Purpose General Purpose
Capacitance @ Frequency 2400pF @ 1MHz 2875pF @ 1MHz
Operating Temperature - -
Mounting Type Through Hole Through Hole
Package / Case R-6, Axial R-6, Axial
Supplier Device Package R-6 R-6

Related Product By Categories

PESD5V0V1BLSYL
PESD5V0V1BLSYL
Nexperia USA Inc.
PESD5V0V1BLS/SOD882BD/XSON2
PTVS15VU1UPAZ
PTVS15VU1UPAZ
Nexperia USA Inc.
TVS DIODE 15VWM 24.4VC 3HUSON
SM6T150A
SM6T150A
STMicroelectronics
TVS DIODE 128VWM 265VC SMB
SM6T22CAY
SM6T22CAY
STMicroelectronics
TVS DIODE 18.8VWM 30.6VC SMB
NUP3115UPMUTAG
NUP3115UPMUTAG
onsemi
TVS DIODE 5.5VWM 9.4VC 6UDFN
PESD24VL1BAF
PESD24VL1BAF
Nexperia USA Inc.
TVS DIODE 24VWM 70VC SOD323
SM15T100A-M3/57T
SM15T100A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM15T30CAHM3_A/H
SM15T30CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM6T39AHE3/5B
SM6T39AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
TPD6E001RSERG4
TPD6E001RSERG4
Texas Instruments
TVS DIODE 5VWM 10UQFN
ESDAXLC6-1BU2K
ESDAXLC6-1BU2K
STMicroelectronics
TVS DIODE 3VWM 19VC ST0201
SM15T200CAHM3_A/H
SM15T200CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB

Related Product By Brand

STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
LM258PT
LM258PT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8TSSOP
TS944AIDT
TS944AIDT
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 14SO
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
LD39015M33R
LD39015M33R
STMicroelectronics
IC REG LINEAR 3.3V 150MA SOT23-5
L78M05ACDT-TR
L78M05ACDT-TR
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP