Overview
The RB751S-40T9TE61 is a Schottky barrier diode produced by Rohm Semiconductor. This component is designed for low current rectification and is known for its ultra-small mold type, making it suitable for compact electronic designs. The diode features a silicon epitaxial planar structure and is packaged in the EMD2 (SOD-523) package type, which is also compatible with JEITA SC-79 and JEDEC SOD-523 standards.
Key Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Reverse Voltage (Repetitive Peak) | VRM | - | - | 40 | V | - |
| Reverse Voltage (DC) | VR | - | - | 30 | V | - |
| Average Rectified Forward Current | Io | - | - | 30 | mA | - |
| Forward Current Surge Peak | IFSM | - | - | 200 | mA | 60Hz, 1 cycle |
| Junction Temperature | Tj | - | - | 125 | °C | - |
| Storage Temperature | Tstg | -40 | - | 125 | °C | - |
| Forward Voltage | VF | - | 0.28 | 0.37 | V | IF = 1 mA |
| Reverse Current | IR | - | - | 0.5 | μA | VR = 30 V |
| Capacitance between Terminals | Ct | - | 2 | - | pF | VR = 1 V, f = 1 MHz |
Key Features
- Ultra Small Mold Type: The RB751S-40T9TE61 is packaged in the EMD2 (SOD-523) type, which is ultra-small and suitable for compact designs.
- Low Forward Voltage (VF): The diode has a low forward voltage of up to 0.37 V at 1 mA, which reduces power loss and heat generation.
- High Reliability: Designed with high reliability in mind, this diode ensures stable performance under various operating conditions.
- Surface Mount Technology: The component is designed for surface mount applications, making it easy to integrate into modern PCB designs.
Applications
The RB751S-40T9TE61 Schottky barrier diode is suitable for various applications requiring low current rectification, such as:
- Power supply circuits
- Switching regulators
- Rectifier circuits in small signal and low current applications
- General-purpose rectification in compact electronic devices
Q & A
- What is the maximum reverse voltage of the RB751S-40T9TE61?
The maximum reverse voltage (VR) is 30 V, and the peak reverse voltage (VRM) is 40 V.
- What is the average rectified forward current of this diode?
The average rectified forward current (Io) is 30 mA.
- What is the maximum junction temperature for this diode?
The maximum junction temperature (Tj) is 125°C.
- What is the typical forward voltage of the RB751S-40T9TE61?
The typical forward voltage (VF) is 0.28 V to 0.37 V at 1 mA.
- What is the reverse current at 30 V for this diode?
The reverse current (IR) is up to 0.5 μA at VR = 30 V.
- What is the capacitance between terminals at 1 V and 1 MHz?
The capacitance between terminals (Ct) is approximately 2 pF at VR = 1 V and f = 1 MHz.
- What is the package type of the RB751S-40T9TE61?
The diode is packaged in the EMD2 (SOD-523) type.
- Is the RB751S-40T9TE61 RoHS compliant?
Yes, the RB751S-40T9TE61 is RoHS compliant.
- What are the storage temperature limits for this diode?
The storage temperature range is from -40°C to +125°C.
- What is the forward current surge peak for this diode?
The forward current surge peak (IFSM) is 200 mA for a 60Hz, 1 cycle pulse.
