RB751S-40T9TE61
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Rohm Semiconductor RB751S-40T9TE61

Manufacturer No:
RB751S-40T9TE61
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY SMD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751S-40T9TE61 is a Schottky barrier diode produced by Rohm Semiconductor. This component is designed for low current rectification and is known for its ultra-small mold type, making it suitable for compact electronic designs. The diode features a silicon epitaxial planar structure and is packaged in the EMD2 (SOD-523) package type, which is also compatible with JEITA SC-79 and JEDEC SOD-523 standards.

Key Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
Reverse Voltage (Repetitive Peak) VRM - - 40 V -
Reverse Voltage (DC) VR - - 30 V -
Average Rectified Forward Current Io - - 30 mA -
Forward Current Surge Peak IFSM - - 200 mA 60Hz, 1 cycle
Junction Temperature Tj - - 125 °C -
Storage Temperature Tstg -40 - 125 °C -
Forward Voltage VF - 0.28 0.37 V IF = 1 mA
Reverse Current IR - - 0.5 μA VR = 30 V
Capacitance between Terminals Ct - 2 - pF VR = 1 V, f = 1 MHz

Key Features

  • Ultra Small Mold Type: The RB751S-40T9TE61 is packaged in the EMD2 (SOD-523) type, which is ultra-small and suitable for compact designs.
  • Low Forward Voltage (VF): The diode has a low forward voltage of up to 0.37 V at 1 mA, which reduces power loss and heat generation.
  • High Reliability: Designed with high reliability in mind, this diode ensures stable performance under various operating conditions.
  • Surface Mount Technology: The component is designed for surface mount applications, making it easy to integrate into modern PCB designs.

Applications

The RB751S-40T9TE61 Schottky barrier diode is suitable for various applications requiring low current rectification, such as:

  • Power supply circuits
  • Switching regulators
  • Rectifier circuits in small signal and low current applications
  • General-purpose rectification in compact electronic devices

Q & A

  1. What is the maximum reverse voltage of the RB751S-40T9TE61?

    The maximum reverse voltage (VR) is 30 V, and the peak reverse voltage (VRM) is 40 V.

  2. What is the average rectified forward current of this diode?

    The average rectified forward current (Io) is 30 mA.

  3. What is the maximum junction temperature for this diode?

    The maximum junction temperature (Tj) is 125°C.

  4. What is the typical forward voltage of the RB751S-40T9TE61?

    The typical forward voltage (VF) is 0.28 V to 0.37 V at 1 mA.

  5. What is the reverse current at 30 V for this diode?

    The reverse current (IR) is up to 0.5 μA at VR = 30 V.

  6. What is the capacitance between terminals at 1 V and 1 MHz?

    The capacitance between terminals (Ct) is approximately 2 pF at VR = 1 V and f = 1 MHz.

  7. What is the package type of the RB751S-40T9TE61?

    The diode is packaged in the EMD2 (SOD-523) type.

  8. Is the RB751S-40T9TE61 RoHS compliant?

    Yes, the RB751S-40T9TE61 is RoHS compliant.

  9. What are the storage temperature limits for this diode?

    The storage temperature range is from -40°C to +125°C.

  10. What is the forward current surge peak for this diode?

    The forward current surge peak (IFSM) is 200 mA for a 60Hz, 1 cycle pulse.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
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