RB751S-40FTE61
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Rohm Semiconductor RB751S-40FTE61

Manufacturer No:
RB751S-40FTE61
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY SMD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751S-40FTE61 is a Schottky barrier diode produced by Rohm Semiconductor. This diode is designed for high-speed switching applications, circuit protection, and voltage clamping. It features an ultra-small mold type (EMD2) package, making it ideal for hand-held and portable devices where space is limited.

The device is known for its extremely low forward voltage, high reliability, and low reverse current, which reduce conduction loss and enhance overall performance.

Key Specifications

Parameter Symbol Value Unit Conditions
Peak Reverse Voltage VRM 40 V
Reverse Voltage (DC) VR 30 V
Forward Continuous Current (DC) IF 30 mA
Peak Forward Surge Current IFSM 200 mA 60Hz/1 cycle
Junction Temperature Tj 125 °C
Storage Temperature Tstg -40 to +125 °C
Forward Voltage VF 0.28 - 0.37 V IF = 1 mA
Reverse Current IR 0.5 μA VR = 30 V
Capacitance between Terminals Ct 2 pF VR = 1 V, f = 1 MHz
Package SC-79, SOD-523
Technology Schottky

Key Features

  • Ultra small mold type (EMD2) for compact designs.
  • Extremely low forward voltage (VF) of 0.28 - 0.37 V at IF = 1 mA, reducing conduction loss.
  • Low reverse current (IR) of 0.5 μA at VR = 30 V.
  • High reliability and robust construction.
  • Lead-free plating and RoHS compliant.
  • Halogen-free and BFR-free.
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
  • Extremely fast switching speed, suitable for high-speed applications.

Applications

  • High-speed switching applications.
  • Circuit protection and voltage clamping.
  • Hand-held and portable devices where space is limited.
  • Automotive and other applications requiring high reliability and specific site and control change requirements.
  • Low current rectification in various electronic circuits.

Q & A

  1. What is the peak reverse voltage of the RB751S-40FTE61?

    The peak reverse voltage (VRM) is 40 V.

  2. What is the forward continuous current rating of this diode?

    The forward continuous current (IF) is 30 mA.

  3. What is the typical forward voltage of the RB751S-40FTE61?

    The typical forward voltage (VF) is 0.28 - 0.37 V at IF = 1 mA.

  4. What is the maximum junction temperature for this diode?

    The maximum junction temperature (Tj) is 125°C.

  5. Is the RB751S-40FTE61 RoHS compliant?
  6. What package types are available for the RB751S-40FTE61?

    The diode is available in SC-79 and SOD-523 packages.

  7. What are some typical applications for the RB751S-40FTE61?

    Typical applications include high-speed switching, circuit protection, voltage clamping, and use in hand-held and portable devices.

  8. Is the RB751S-40FTE61 suitable for automotive applications?
  9. What is the reverse current at 30 V for the RB751S-40FTE61?

    The reverse current (IR) at VR = 30 V is 0.5 μA.

  10. What is the capacitance between terminals at 1 MHz for the RB751S-40FTE61?

    The capacitance between terminals (Ct) at VR = 1 V and f = 1 MHz is 2 pF.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
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