BAS116HYT116
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Rohm Semiconductor BAS116HYT116

Manufacturer No:
BAS116HYT116
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
LOW-LEAKAGE, 80V, 215MA, SOT-23,
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS116HYT116 is a low-leakage, single switching diode produced by ROHM Semiconductor. It is designed for general switching applications and is known for its high reliability and low reverse current (IR). This diode is packaged in a SOT-23 surface mount configuration, making it suitable for a variety of electronic designs where space is a concern.

Key Specifications

ParameterValue
ConfigurationSingle
Package CodeSOT-23
Mounting StyleSurface mount
Number of Terminals3
Reverse Voltage VR [V]80
Average Rectified Forward Current IO [A]0.215
Peak Forward Current IFM [A]0.5
Forward Voltage VF [V]1.25
Forward Current at Forward Voltage [mA]150
Reverse Current IR [µA]0.005
Reverse Voltage at Reverse Current [V]75
Reverse Recovery Time trr [ns]3000
Forward Current at trr [mA]10
Storage Temperature (Min.) [°C]-65
Storage Temperature (Max.) [°C]150
Package Size [mm]2.9x2.4 (t=1.15)

Key Features

  • High reliability
  • Low reverse current (IR)
  • Small SOT-23 package
  • Surface mount configuration
  • RoHS compliant

Applications

The BAS116HYT116 is suitable for various general switching applications in electronic circuits. It is particularly useful in designs where low leakage and high reliability are critical. This includes but is not limited to:

  • Automotive systems (contact sales for specific automotive usage)
  • Consumer electronics
  • Industrial control systems
  • Power supply circuits

Q & A

  1. What is the reverse voltage rating of the BAS116HYT116 diode?
    The reverse voltage rating is 80V.
  2. What is the average rectified forward current of the BAS116HYT116?
    The average rectified forward current is 0.215A.
  3. What is the forward voltage drop of the BAS116HYT116?
    The forward voltage drop is 1.25V.
  4. What is the reverse current at 75V for the BAS116HYT116?
    The reverse current at 75V is 0.005µA.
  5. What is the reverse recovery time of the BAS116HYT116?
    The reverse recovery time is 3000ns.
  6. What is the storage temperature range for the BAS116HYT116?
    The storage temperature range is from -65°C to 150°C.
  7. Is the BAS116HYT116 RoHS compliant?
    Yes, the BAS116HYT116 is RoHS compliant.
  8. What is the package type of the BAS116HYT116?
    The package type is SOT-23.
  9. What are the dimensions of the BAS116HYT116 package?
    The package dimensions are 2.9x2.4mm (t=1.15mm).
  10. Where can I find detailed specifications for the BAS116HYT116?
    Detailed specifications can be found on ROHM Semiconductor's official website or through authorized distributors like RS Components, Farnell, and Radwell.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io):215mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):3 µs
Current - Reverse Leakage @ Vr:5 nA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
Operating Temperature - Junction:150°C
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Similar Products

Part Number BAS116HYT116 BAS16HYT116
Manufacturer Rohm Semiconductor Rohm Semiconductor
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) 215mA (DC) 215mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 3 µs 4 ns
Current - Reverse Leakage @ Vr 5 nA @ 75 V 500 nA @ 80 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23
Operating Temperature - Junction 150°C 150°C

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