FFSH15120ADN-F155
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Fairchild Semiconductor FFSH15120ADN-F155

Manufacturer No:
FFSH15120ADN-F155
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
RECTIFIER DIODE, SCHOTTKY, 1 PHA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSH15120ADN-F155 is a Silicon Carbide (SiC) Schottky diode array produced by Fairchild Semiconductor, now part of ON Semiconductor. This component is designed for high-performance applications requiring low switching losses and high surge current capacity. The diode array features a common cathode configuration and is packaged in a TO-247-3 through-hole package, making it suitable for a variety of power management and conversion systems.

Key Specifications

ParameterValue
Voltage Rating (VDRM)1200 V
Current Rating (IF)8 A (DC)
Package TypeTO-247-3 Through Hole
Configuration1 Pair Common Cathode
Semiconductor MaterialSilicon Carbide (SiC)

Key Features

  • No switching loss, reducing energy losses in high-frequency applications.
  • High surge current capacity, enhancing reliability under transient conditions.
  • Silicon Carbide (SiC) semiconductor material for improved performance and efficiency.
  • Common cathode configuration, suitable for various power management and conversion circuits.
  • TO-247-3 through-hole package, providing good thermal management and ease of mounting.

Applications

The FFSH15120ADN-F155 is ideal for use in high-power applications such as:

  • Power factor correction (PFC) circuits.
  • DC-DC converters and power supplies.
  • Motor drives and control systems.
  • Renewable energy systems, including solar and wind power.
  • High-frequency switching applications where low losses and high efficiency are critical.

Q & A

  1. What is the voltage rating of the FFSH15120ADN-F155?
    The voltage rating is 1200 V.
  2. What is the current rating of the FFSH15120ADN-F155?
    The current rating is 8 A (DC).
  3. What type of package does the FFSH15120ADN-F155 use?
    The package type is TO-247-3 through-hole.
  4. What is the configuration of the diode array in the FFSH15120ADN-F155?
    The configuration is 1 pair common cathode.
  5. What material is used in the FFSH15120ADN-F155?
    The semiconductor material used is Silicon Carbide (SiC).
  6. What are the key benefits of using Silicon Carbide (SiC) in the FFSH15120ADN-F155?
    The key benefits include no switching loss and high surge current capacity.
  7. In what types of applications is the FFSH15120ADN-F155 commonly used?
    Common applications include power factor correction (PFC) circuits, DC-DC converters, motor drives, and renewable energy systems.
  8. Why is the TO-247-3 package beneficial for this component?
    The TO-247-3 package provides good thermal management and ease of mounting.
  9. How does the FFSH15120ADN-F155 enhance efficiency in power management systems?
    The component enhances efficiency by reducing switching losses and providing high surge current capacity.
  10. Where can I find detailed specifications and datasheets for the FFSH15120ADN-F155?
    Detailed specifications and datasheets can be found on the official ON Semiconductor website, as well as on distributor sites like Mouser and Digi-Key.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1.2 V
Current - Average Rectified (Io) (per Diode):8A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 µA @ 1.2 V
Operating Temperature - Junction:-55°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number FFSH15120ADN-F155 FFSH10120ADN-F155
Manufacturer Fairchild Semiconductor onsemi
Product Status Active Active
Diode Configuration 1 Pair Common Cathode -
Diode Type Silicon Carbide Schottky -
Voltage - DC Reverse (Vr) (Max) 1.2 V -
Current - Average Rectified (Io) (per Diode) 8A (DC) -
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A -
Speed Fast Recovery =< 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 200 µA @ 1.2 V -
Operating Temperature - Junction -55°C ~ 175°C -
Mounting Type Through Hole -
Package / Case TO-247-3 -
Supplier Device Package TO-247-3 -

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