Overview
The BC858B_R1_00001 is a general-purpose bipolar junction transistor (BJT) manufactured by Panjit International Inc. This transistor is designed for a wide range of applications requiring reliable and efficient performance. It is part of the BC858 series, known for its versatility and robust characteristics.
Key Specifications
| Parameter | Value |
|---|---|
| Type | Bipolar Junction Transistor (BJT) PNP |
| Collector-Emitter Voltage (VCE) | 30 V |
| Collector Current (IC) | 100 mA |
| Frequency (fT) | 200 MHz |
| Power Dissipation (PD) | 330 mW |
| Package Type | SOT-23 |
| Pinning | Surface Mount, 3-pin |
Key Features
- General Purpose: Suitable for a variety of applications including amplifiers, switches, and voltage regulators.
- High Frequency Capability: With a frequency of 200 MHz, it is suitable for high-frequency applications.
- Low Power Consumption: The transistor has a power dissipation of 330 mW, making it energy-efficient.
- Compact Package: The SOT-23 package is compact and ideal for space-constrained designs.
- Reliability: Manufactured by Panjit International Inc., known for its reliable electronic components.
Applications
- Amplifiers and Switches: Used in audio amplifiers, signal amplifiers, and switching circuits.
- Voltage Regulators: Can be used in voltage regulator circuits to stabilize output voltage.
- Automotive Electronics: Suitable for use in automotive systems due to its robust characteristics.
- Consumer Electronics: Used in various consumer electronic devices such as radios, TVs, and other electronic appliances.
- Industrial Control Systems: Employed in industrial control systems for reliable operation.
Q & A
- What is the type of the BC858B_R1_00001 transistor?
The BC858B_R1_00001 is a PNP bipolar junction transistor (BJT).
- What is the maximum collector-emitter voltage (VCE) of the BC858B_R1_00001?
The maximum collector-emitter voltage (VCE) is 30 V.
- What is the maximum collector current (IC) of the BC858B_R1_00001?
The maximum collector current (IC) is 100 mA.
- What is the frequency (fT) of the BC858B_R1_00001?
The frequency (fT) is 200 MHz.
- What is the power dissipation (PD) of the BC858B_R1_00001?
The power dissipation (PD) is 330 mW.
- What package type does the BC858B_R1_00001 use?
The BC858B_R1_00001 uses the SOT-23 package type.
- What are some common applications of the BC858B_R1_00001?
Common applications include amplifiers, switches, voltage regulators, automotive electronics, consumer electronics, and industrial control systems.
- Why is the BC858B_R1_00001 suitable for high-frequency applications?
The BC858B_R1_00001 is suitable for high-frequency applications due to its high frequency capability of 200 MHz.
- What is the advantage of the SOT-23 package used by the BC858B_R1_00001?
The SOT-23 package is compact and ideal for space-constrained designs.
- Who manufactures the BC858B_R1_00001 transistor?
The BC858B_R1_00001 transistor is manufactured by Panjit International Inc.
