Overview
The SZESD7571N2T5G is an ESD protection diode manufactured by onsemi, designed to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. This device is particularly suited for applications where ultra-low capacitance and high linearity are crucial, such as in RF signal protection and antenna line applications for wireless handsets and terminals.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Reverse Working Voltage | VRWM | 5.3 | V |
| Breakdown Voltage | VBR | 7.0 | V |
| Maximum Reverse Leakage Current | IR | < 1 nA | nA |
| Clamping Voltage | VC | 13 - 15 | V |
| Junction Capacitance | CJ | 0.35 pF (Max) | pF |
| Dynamic Resistance | RDYN | < 1 Ω | Ω |
| IEC 61000-4-2 Contact (ESD) | ESD | ±20 kV | kV |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Lead Solder Temperature - Maximum (10 Second Duration) | TL | 260 | °C |
Key Features
- Industry Leading Capacitance Linearity Over Voltage
- Ultra-Low Capacitance: 0.35 pF Max
- Low Leakage: < 1 nA
- Low Dynamic Resistance: < 1 Ω
- IEC61000-4-2 Level 4 ESD Protection: 1000 ESD Strikes ±8 kV Contact / Air Discharged
- Wettable Flank Package for Optimal Automated Optical Inspection (AOI)
- AEC-Q101 Qualified and PPAP Capable for Automotive and Other Applications
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant
Applications
- RF Signal ESD Protection
- RF Switching, PA, and Antenna ESD Protection
- Near Field Communications
- USB 2.0, USB 3.0
Q & A
- What is the primary function of the SZESD7571N2T5G?
The primary function of the SZESD7571N2T5G is to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.
- What is the maximum reverse working voltage of the SZESD7571N2T5G?
The maximum reverse working voltage is 5.3 V.
- What is the breakdown voltage of the SZESD7571N2T5G?
The breakdown voltage is 7.0 V.
- What is the maximum reverse leakage current of the SZESD7571N2T5G?
The maximum reverse leakage current is less than 1 nA.
- What is the clamping voltage of the SZESD7571N2T5G during an ESD event?
The clamping voltage is between 13 V and 15 V.
- What is the junction capacitance of the SZESD7571N2T5G?
The junction capacitance is 0.35 pF (Max).
- Is the SZESD7571N2T5G compliant with automotive standards?
Yes, it is AEC-Q101 Qualified and PPAP Capable.
- Is the SZESD7571N2T5G environmentally friendly?
Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- What are some typical applications of the SZESD7571N2T5G?
Typical applications include RF signal ESD protection, RF switching, PA, and antenna ESD protection, near field communications, and USB 2.0 and 3.0.
- What is the maximum lead solder temperature for the SZESD7571N2T5G?
The maximum lead solder temperature is 260°C for a 10-second duration.
