Overview
The SZESD5Z3.3T1G is a unidirectional ESD protection diode from onsemi, designed to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. This diode is part of the ESD5Z Series, which is renowned for its excellent clamping capability, low leakage, and fast response time. These characteristics make it ideal for ESD protection in designs where board space is limited, such as in cellular phones, portable devices, digital cameras, and power supplies.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Stand-off Voltage (VRWM) | 3.3 | V |
| Breakdown Voltage (VBR) @ IT | 5.0 | V |
| Clamping Voltage (VC) @ IPP = 5.0 A | 8.4 | V |
| Maximum Reverse Leakage Current (IR) @ VRWM | 0.05 | μA |
| Peak Power Dissipation @ 8 x 20 μs Pulse | 158 | W |
| Maximum Capacitance @ VR = 0 and f = 1 MHz | 105 | pF |
| Response Time | < 1 ns | |
| ESD Rating per Human Body Model | > 16 kV | |
| IEC 61000-4-2 ESD Protection Level | Level 4 | |
| IEC 61000-4-4 EFT Protection Level | Level 4 | |
| Package Type | SOD-523 | |
| Body Dimensions | 0.047" x 0.032" (1.20 mm x 0.80 mm) | |
| Body Height | 0.028" (0.7 mm) | |
| Pb-Free and RoHS Compliant | Yes |
Key Features
- Low Clamping Voltage
- Small Body Outline Dimensions: 0.047" x 0.032" (1.20 mm x 0.80 mm)
- Low Body Height: 0.028" (0.7 mm)
- Low Leakage
- Fast Response Time: Typically < 1 ns
- IEC 61000-4-2 Level 4 ESD Protection and IEC 61000-4-4 Level 4 EFT Protection
- Peak Power up to 158 Watts @ 8 x 20 μs Pulse
- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free and RoHS Compliant
Applications
- General ESD protection for handheld devices
- TVS protection for charger lines and battery contacts in handheld products
- Automotive IVN (In-Vehicle Networks)
- Portable devices such as cellular phones, digital cameras, and power supplies
Q & A
- What is the primary function of the SZESD5Z3.3T1G diode?
The primary function of the SZESD5Z3.3T1G diode is to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.
- What are the key specifications of the SZESD5Z3.3T1G diode?
Key specifications include a stand-off voltage of 3.3V, clamping voltage of 8.4V @ 5A, peak power dissipation of 158W, and a response time of less than 1ns.
- What is the package type and dimensions of the SZESD5Z3.3T1G diode?
The package type is SOD-523 with dimensions of 0.047" x 0.032" (1.20 mm x 0.80 mm) and a height of 0.028" (0.7 mm).
- Is the SZESD5Z3.3T1G diode Pb-Free and RoHS compliant?
Yes, the SZESD5Z3.3T1G diode is Pb-Free and RoHS compliant.
- What are the ESD and EFT protection levels of the SZESD5Z3.3T1G diode?
The diode provides IEC 61000-4-2 Level 4 ESD protection and IEC 61000-4-4 Level 4 EFT protection.
- What is the maximum reverse leakage current of the SZESD5Z3.3T1G diode?
The maximum reverse leakage current is 0.05 μA.
- What is the typical response time of the SZESD5Z3.3T1G diode?
The response time is typically less than 1 ns.
- What are some common applications for the SZESD5Z3.3T1G diode?
Common applications include general ESD protection for handheld devices, TVS protection for charger lines and battery contacts, and automotive IVN.
- Is the SZESD5Z3.3T1G diode qualified for automotive applications?
Yes, the diode is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the peak power dissipation capability of the SZESD5Z3.3T1G diode?
The peak power dissipation is up to 158 Watts @ 8 x 20 μs pulse.
