SMBT1232LT1G
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onsemi SMBT1232LT1G

Manufacturer No:
SMBT1232LT1G
Manufacturer:
onsemi
Package:
Bulk
Description:
SS SOT23 GP XSTR SPCL TR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMBT1232LT1G is a N-Channel MOSFET produced by onsemi, designed for a variety of power switching applications. This device is packaged in a SOT-23 case, making it compact and suitable for space-constrained designs. The SMBT1232LT1G is known for its high performance and reliability, featuring a drain-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 170 mA. It is also Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 100 Vdc
Gate-Source Voltage - Continuous VGS ±20 Vdc
Gate-Source Voltage - Non-repetitive (tp ≤ 50 μs) VGSM ±40 Vpk
Continuous Drain Current ID 0.17 A
Pulsed Drain Current IDM 0.68 A
Gate Threshold Voltage VGS(th) 1.6 - 2.6 Vdc
Static Drain-Source On-Resistance rDS(on) 6.0 Ω
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 225 mW mW
Thermal Resistance, Junction-to-Ambient RθJA 556 °C/W °C/W

Key Features

  • High Performance: The SMBT1232LT1G offers high drain current and low on-resistance, making it suitable for power switching applications.
  • Compact Package: The SOT-23 package is compact and ideal for space-constrained designs.
  • Environmental Compliance: Pb-free and RoHS compliant, ensuring environmental sustainability.
  • AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
  • ESD Protection: HBM Class 0A and MM Class M1B ESD protection.
  • Low Gate Threshold Voltage: VGS(th) of 1.6 to 2.6 Vdc, facilitating easy gate drive.

Applications

  • Power Switching: Ideal for general-purpose power switching in various electronic devices.
  • Automotive Systems: Suitable for automotive applications due to its AEC-Q101 qualification.
  • Consumer Electronics: Used in consumer electronics such as power supplies, motor control, and battery management systems.
  • Industrial Control: Applicable in industrial control systems, including motor drives and power management.

Q & A

  1. What is the maximum drain-source voltage of the SMBT1232LT1G?

    The maximum drain-source voltage (VDSS) is 100 Vdc.

  2. What is the continuous drain current of the SMBT1232LT1G?

    The continuous drain current (ID) is 0.17 A.

  3. What is the gate threshold voltage range of the SMBT1232LT1G?

    The gate threshold voltage (VGS(th)) ranges from 1.6 to 2.6 Vdc.

  4. Is the SMBT1232LT1G Pb-free and RoHS compliant?

    Yes, the SMBT1232LT1G is Pb-free and RoHS compliant.

  5. What is the thermal resistance, junction-to-ambient of the SMBT1232LT1G?

    The thermal resistance, junction-to-ambient (RθJA) is 556 °C/W.

  6. What package type is the SMBT1232LT1G available in?

    The SMBT1232LT1G is available in a SOT-23 package.

  7. Is the SMBT1232LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and suitable for automotive and other applications requiring unique site and control change requirements.

  8. What is the maximum junction and storage temperature of the SMBT1232LT1G?

    The maximum junction and storage temperature (TJ, Tstg) is -55 to +150 °C.

  9. What is the typical on-resistance of the SMBT1232LT1G?

    The typical static drain-source on-resistance (rDS(on)) is 6.0 Ω.

  10. Does the SMBT1232LT1G have ESD protection?

    Yes, it has HBM Class 0A and MM Class M1B ESD protection.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
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Similar Products

Part Number SMBT1232LT1G SMBT1232LT3G SMBT1230LT1G SMBT1231LT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Diode Type - - - -
Voltage - DC Reverse (Vr) (Max) - - - -
Current - Average Rectified (Io) - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Speed - - - -
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr - - - -
Capacitance @ Vr, F - - - -
Mounting Type - - - -
Package / Case - - - -
Supplier Device Package - - - -
Operating Temperature - Junction - - - -

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