SESD5481MUT5G
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onsemi SESD5481MUT5G

Manufacturer No:
SESD5481MUT5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 5VWM 15VC 2X3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SESD5481MUT5G is an ESD (Electrostatic Discharge) protection diode designed by onsemi to safeguard voltage-sensitive components from ESD events. This device is notable for its excellent clamping capability, low leakage current, and fast response time, making it an ideal choice for protecting sensitive electronics in various applications.

Key Specifications

ParameterSymbolConditionMinTypMaxUnit
Reverse Working VoltageVRWM5V
Breakdown VoltageVBRIT = 1 mA6.5V
Reverse Leakage CurrentIRVRWM = 5 V< 150nA
Clamping VoltageVCIPP = 1 A1215V
Junction CapacitanceCJVR = 0 V, f = 1 MHz5pF
Response Time< 1ns
ESD ProtectionIEC61000-4-2Level 4
EFT ProtectionIEC61000-4-4Level 4
Package Dimensions0.60 mm x 0.30 mm x 0.3 mm

Key Features

  • Low capacitance of 5 pF, which minimizes the impact on high-frequency signals.
  • Low clamping voltage to protect sensitive components from ESD damage.
  • Small body outline dimensions (0.60 mm x 0.30 mm x 0.3 mm) suitable for space-constrained applications.
  • Fast response time of less than 1 ns to quickly mitigate ESD events.
  • Compliance with IEC61000-4-2 Level 4 ESD protection and IEC61000-4-4 Level 4 EFT protection.
  • Pb-free, halogen-free, and RoHS compliant.

Applications

The SESD5481MUT5G is well-suited for use in various portable and compact electronic devices where board space is limited. Typical applications include:

  • Cellular phones
  • MP3 players
  • Digital cameras
  • Other portable electronic devices

Q & A

  1. What is the primary function of the SESD5481MUT5G?
    The primary function of the SESD5481MUT5G is to protect voltage-sensitive components from electrostatic discharge (ESD) events.
  2. What are the key specifications of the SESD5481MUT5G?
    Key specifications include a reverse working voltage of 5 V, breakdown voltage of 6.5 V, reverse leakage current of less than 50 nA, and a clamping voltage of 12-15 V.
  3. What is the response time of the SESD5481MUT5G?
    The response time is less than 1 ns.
  4. Is the SESD5481MUT5G RoHS compliant?
    Yes, the SESD5481MUT5G is Pb-free, halogen-free, and RoHS compliant.
  5. What are the typical applications of the SESD5481MUT5G?
    Typical applications include cellular phones, MP3 players, digital cameras, and other portable electronic devices.
  6. What is the package size of the SESD5481MUT5G?
    The package dimensions are 0.60 mm x 0.30 mm x 0.3 mm.
  7. Does the SESD5481MUT5G meet any specific ESD protection standards?
    Yes, it meets IEC61000-4-2 Level 4 ESD protection and IEC61000-4-4 Level 4 EFT protection standards.
  8. What is the junction capacitance of the SESD5481MUT5G?
    The junction capacitance is 5 pF at 1 MHz.
  9. Is the SESD5481MUT5G suitable for high-frequency applications?
    Yes, due to its low capacitance, it is suitable for high-frequency applications.
  10. What is the maximum reflow temperature for the SESD5481MUT5G?
    The maximum reflow temperature is 260°C.

Product Attributes

Type:Zener
Unidirectional Channels:- 
Bidirectional Channels:1
Voltage - Reverse Standoff (Typ):5V (Max)
Voltage - Breakdown (Min):5.7V
Voltage - Clamping (Max) @ Ipp:15V
Current - Peak Pulse (10/1000µs):2A (8/20µs)
Power - Peak Pulse:- 
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:12pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:0201 (0603 Metric)
Supplier Device Package:2-X3DFN (0.6x0.3) (0201)
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In Stock

$0.04
10,802

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Same Series
SESD5481MUT5G
SESD5481MUT5G
TVS DIODE 5VWM 15VC 2X3DFN

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