SESD5481MUT5G
  • Share:

onsemi SESD5481MUT5G

Manufacturer No:
SESD5481MUT5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 5VWM 15VC 2X3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SESD5481MUT5G is an ESD (Electrostatic Discharge) protection diode designed by onsemi to safeguard voltage-sensitive components from ESD events. This device is notable for its excellent clamping capability, low leakage current, and fast response time, making it an ideal choice for protecting sensitive electronics in various applications.

Key Specifications

ParameterSymbolConditionMinTypMaxUnit
Reverse Working VoltageVRWM5V
Breakdown VoltageVBRIT = 1 mA6.5V
Reverse Leakage CurrentIRVRWM = 5 V< 150nA
Clamping VoltageVCIPP = 1 A1215V
Junction CapacitanceCJVR = 0 V, f = 1 MHz5pF
Response Time< 1ns
ESD ProtectionIEC61000-4-2Level 4
EFT ProtectionIEC61000-4-4Level 4
Package Dimensions0.60 mm x 0.30 mm x 0.3 mm

Key Features

  • Low capacitance of 5 pF, which minimizes the impact on high-frequency signals.
  • Low clamping voltage to protect sensitive components from ESD damage.
  • Small body outline dimensions (0.60 mm x 0.30 mm x 0.3 mm) suitable for space-constrained applications.
  • Fast response time of less than 1 ns to quickly mitigate ESD events.
  • Compliance with IEC61000-4-2 Level 4 ESD protection and IEC61000-4-4 Level 4 EFT protection.
  • Pb-free, halogen-free, and RoHS compliant.

Applications

The SESD5481MUT5G is well-suited for use in various portable and compact electronic devices where board space is limited. Typical applications include:

  • Cellular phones
  • MP3 players
  • Digital cameras
  • Other portable electronic devices

Q & A

  1. What is the primary function of the SESD5481MUT5G?
    The primary function of the SESD5481MUT5G is to protect voltage-sensitive components from electrostatic discharge (ESD) events.
  2. What are the key specifications of the SESD5481MUT5G?
    Key specifications include a reverse working voltage of 5 V, breakdown voltage of 6.5 V, reverse leakage current of less than 50 nA, and a clamping voltage of 12-15 V.
  3. What is the response time of the SESD5481MUT5G?
    The response time is less than 1 ns.
  4. Is the SESD5481MUT5G RoHS compliant?
    Yes, the SESD5481MUT5G is Pb-free, halogen-free, and RoHS compliant.
  5. What are the typical applications of the SESD5481MUT5G?
    Typical applications include cellular phones, MP3 players, digital cameras, and other portable electronic devices.
  6. What is the package size of the SESD5481MUT5G?
    The package dimensions are 0.60 mm x 0.30 mm x 0.3 mm.
  7. Does the SESD5481MUT5G meet any specific ESD protection standards?
    Yes, it meets IEC61000-4-2 Level 4 ESD protection and IEC61000-4-4 Level 4 EFT protection standards.
  8. What is the junction capacitance of the SESD5481MUT5G?
    The junction capacitance is 5 pF at 1 MHz.
  9. Is the SESD5481MUT5G suitable for high-frequency applications?
    Yes, due to its low capacitance, it is suitable for high-frequency applications.
  10. What is the maximum reflow temperature for the SESD5481MUT5G?
    The maximum reflow temperature is 260°C.

Product Attributes

Type:Zener
Unidirectional Channels:- 
Bidirectional Channels:1
Voltage - Reverse Standoff (Typ):5V (Max)
Voltage - Breakdown (Min):5.7V
Voltage - Clamping (Max) @ Ipp:15V
Current - Peak Pulse (10/1000µs):2A (8/20µs)
Power - Peak Pulse:- 
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:12pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:0201 (0603 Metric)
Supplier Device Package:2-X3DFN (0.6x0.3) (0201)
0 Remaining View Similar

In Stock

$0.04
10,802

Please send RFQ , we will respond immediately.

Same Series
SESD5481MUT5G
SESD5481MUT5G
TVS DIODE 5VWM 15VC 2X3DFN

Related Product By Categories

SZ1SMB30CAT3G
SZ1SMB30CAT3G
Littelfuse Inc.
TVS DIODE 30VWM 48.4VC SMB
SZESD8351HT1G
SZESD8351HT1G
onsemi
TVS DIODE 3.3VWM 11.2VC SOD323
SMBJ6V0A
SMBJ6V0A
Taiwan Semiconductor Corporation
TVS DIODE 6VWM 10.3VC DO214AA
CM1293A-02SR
CM1293A-02SR
onsemi
TVS DIODE 3.3VWM 9.9VC SOT143-4
SM6T39CA-E3/5B
SM6T39CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
ESDA041-2W3Y
ESDA041-2W3Y
STMicroelectronics
TVS DIODE 3.6VWM 9VC SOT323-3
SM6T100CAHE3_A/H
SM6T100CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AA
SM15T100A-M3/57T
SM15T100A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM15T30CAHE3_A/I
SM15T30CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM6T22CAHE3/5B
SM6T22CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM6T33CAHM3/H
SM6T33CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM6T7V5CAHM3/I
SM6T7V5CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AA

Related Product By Brand

MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143