RHRG5060-F085
  • Share:

onsemi RHRG5060-F085

Manufacturer No:
RHRG5060-F085
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE GEN PURP 600V 50A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RHRG5060-F085 is a hyperfast rectifier diode produced by onsemi, formerly known as Fairchild Semiconductor. This device is characterized by its high-speed switching capabilities and soft recovery characteristics, making it ideal for various power switching applications. The diode features a silicon nitride passivated ion-implanted epitaxial planar construction, which enhances its performance and reliability.

Designed for use in automotive and general-purpose power supplies, the RHRG5060-F085 offers low stored charge and minimized ringing and electrical noise in power switching circuits. This reduces power loss in the switching transistors, ensuring efficient operation.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 600 V
Working Peak Reverse Voltage VRWM 600 V
DC Blocking Voltage VR 600 V
Average Rectified Forward Current @ TC = 25°C IF(AV) 50 A
Non-repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) IFSM 150 A
Avalanche Energy (1.4 A, 40 mH) EAVL 40 mJ
Operating Junction and Storage Temperature TJ, TSTG -55 to +175 °C
Reverse Recovery Time @ IF = 50 A, di/dt = 100 A/μs, VCC = 390 V trr 45 ns
Forward Voltage @ IF = 50 A VFM 1.67 V
Thermal Resistance, Junction-to-Case RθJC 0.42 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 45 °C/W

Key Features

  • High Speed Switching: Reverse recovery time (trr) of less than 45 ns, which is half the recovery time of ultrafast diodes.
  • Low Forward Voltage: Typical forward voltage (VF) of 1.67 V at 50 A.
  • Avalanche Energy Rated: Capable of withstanding avalanche energy of 40 mJ.
  • AEC-Q101 Qualified: Meets the Automotive Electronics Council’s Q101 standard for reliability and performance in automotive applications.
  • Pb-Free: Lead-free construction, making it compliant with environmental regulations.

Applications

  • Switching Power Supplies: Ideal for use in various switching power supplies due to its high-speed switching and low stored charge characteristics.
  • Power Switching Circuits: Suitable for power switching circuits in automotive and general-purpose applications.
  • Automotive Applications: Designed for use in automotive power supplies and other power switching applications.
  • General Purpose Rectification: Can be used in general-purpose rectification applications requiring high-speed and low noise operation.

Q & A

  1. What is the peak repetitive reverse voltage of the RHRG5060-F085?

    The peak repetitive reverse voltage (VRRM) is 600 V.

  2. What is the typical forward voltage of the RHRG5060-F085 at 50 A?

    The typical forward voltage (VF) at 50 A is 1.67 V.

  3. What is the reverse recovery time of the RHRG5060-F085?

    The reverse recovery time (trr) is less than 45 ns at IF = 50 A and di/dt = 100 A/μs.

  4. Is the RHRG5060-F085 AEC-Q101 qualified?

    Yes, the RHRG5060-F085 is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the operating junction and storage temperature range of the RHRG5060-F085?

    The operating junction and storage temperature range is -55°C to +175°C.

  6. What is the thermal resistance, junction-to-case of the RHRG5060-F085?

    The thermal resistance, junction-to-case (RθJC) is 0.42°C/W.

  7. What is the avalanche energy rating of the RHRG5060-F085?

    The avalanche energy rating (EAVL) is 40 mJ.

  8. What is the package type of the RHRG5060-F085?

    The package type is TO-247-2L.

  9. Is the RHRG5060-F085 lead-free?

    Yes, the RHRG5060-F085 is lead-free (Pb-Free).

  10. What are the typical applications of the RHRG5060-F085?

    The RHRG5060-F085 is typically used in switching power supplies, power switching circuits, and general-purpose rectification in automotive and other applications).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):50A
Voltage - Forward (Vf) (Max) @ If:2.1 V @ 50 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:250 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$6.54
20

Please send RFQ , we will respond immediately.

Similar Products

Part Number RHRG5060-F085 RHRG3060-F085
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V
Current - Average Rectified (Io) 50A 30A
Voltage - Forward (Vf) (Max) @ If 2.1 V @ 50 A 2.1 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 45 ns
Current - Reverse Leakage @ Vr 250 µA @ 600 V 250 µA @ 600 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case TO-247-2 TO-247-2
Supplier Device Package TO-247-2 TO-247-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD