RHRG5060-F085
  • Share:

onsemi RHRG5060-F085

Manufacturer No:
RHRG5060-F085
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE GEN PURP 600V 50A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RHRG5060-F085 is a hyperfast rectifier diode produced by onsemi, formerly known as Fairchild Semiconductor. This device is characterized by its high-speed switching capabilities and soft recovery characteristics, making it ideal for various power switching applications. The diode features a silicon nitride passivated ion-implanted epitaxial planar construction, which enhances its performance and reliability.

Designed for use in automotive and general-purpose power supplies, the RHRG5060-F085 offers low stored charge and minimized ringing and electrical noise in power switching circuits. This reduces power loss in the switching transistors, ensuring efficient operation.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 600 V
Working Peak Reverse Voltage VRWM 600 V
DC Blocking Voltage VR 600 V
Average Rectified Forward Current @ TC = 25°C IF(AV) 50 A
Non-repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) IFSM 150 A
Avalanche Energy (1.4 A, 40 mH) EAVL 40 mJ
Operating Junction and Storage Temperature TJ, TSTG -55 to +175 °C
Reverse Recovery Time @ IF = 50 A, di/dt = 100 A/μs, VCC = 390 V trr 45 ns
Forward Voltage @ IF = 50 A VFM 1.67 V
Thermal Resistance, Junction-to-Case RθJC 0.42 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 45 °C/W

Key Features

  • High Speed Switching: Reverse recovery time (trr) of less than 45 ns, which is half the recovery time of ultrafast diodes.
  • Low Forward Voltage: Typical forward voltage (VF) of 1.67 V at 50 A.
  • Avalanche Energy Rated: Capable of withstanding avalanche energy of 40 mJ.
  • AEC-Q101 Qualified: Meets the Automotive Electronics Council’s Q101 standard for reliability and performance in automotive applications.
  • Pb-Free: Lead-free construction, making it compliant with environmental regulations.

Applications

  • Switching Power Supplies: Ideal for use in various switching power supplies due to its high-speed switching and low stored charge characteristics.
  • Power Switching Circuits: Suitable for power switching circuits in automotive and general-purpose applications.
  • Automotive Applications: Designed for use in automotive power supplies and other power switching applications.
  • General Purpose Rectification: Can be used in general-purpose rectification applications requiring high-speed and low noise operation.

Q & A

  1. What is the peak repetitive reverse voltage of the RHRG5060-F085?

    The peak repetitive reverse voltage (VRRM) is 600 V.

  2. What is the typical forward voltage of the RHRG5060-F085 at 50 A?

    The typical forward voltage (VF) at 50 A is 1.67 V.

  3. What is the reverse recovery time of the RHRG5060-F085?

    The reverse recovery time (trr) is less than 45 ns at IF = 50 A and di/dt = 100 A/μs.

  4. Is the RHRG5060-F085 AEC-Q101 qualified?

    Yes, the RHRG5060-F085 is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the operating junction and storage temperature range of the RHRG5060-F085?

    The operating junction and storage temperature range is -55°C to +175°C.

  6. What is the thermal resistance, junction-to-case of the RHRG5060-F085?

    The thermal resistance, junction-to-case (RθJC) is 0.42°C/W.

  7. What is the avalanche energy rating of the RHRG5060-F085?

    The avalanche energy rating (EAVL) is 40 mJ.

  8. What is the package type of the RHRG5060-F085?

    The package type is TO-247-2L.

  9. Is the RHRG5060-F085 lead-free?

    Yes, the RHRG5060-F085 is lead-free (Pb-Free).

  10. What are the typical applications of the RHRG5060-F085?

    The RHRG5060-F085 is typically used in switching power supplies, power switching circuits, and general-purpose rectification in automotive and other applications).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):50A
Voltage - Forward (Vf) (Max) @ If:2.1 V @ 50 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:250 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$6.54
20

Please send RFQ , we will respond immediately.

Similar Products

Part Number RHRG5060-F085 RHRG3060-F085
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V
Current - Average Rectified (Io) 50A 30A
Voltage - Forward (Vf) (Max) @ If 2.1 V @ 50 A 2.1 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 45 ns
Current - Reverse Leakage @ Vr 250 µA @ 600 V 250 µA @ 600 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case TO-247-2 TO-247-2
Supplier Device Package TO-247-2 TO-247-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE