Overview
The P2N2222AG is an NPN silicon amplifier transistor produced by onsemi. This device is part of the P2N2222A series and is known for its reliability and versatility in various electronic applications. It is a Pb-free device, making it compliant with current environmental regulations. The transistor is packaged in a TO-92 case, which is widely used in electronic circuits due to its compact size and ease of use.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 75 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 600 | mAdc |
| Total Device Dissipation @ TA = 25°C | PD | 625 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 200 | °C/W |
| Thermal Resistance, Junction to Case | RθJC | 83.3 | °C/W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 150 mAdc, VCE = 10 Vdc) | hFE | 100 | |
| Collector-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VCE(sat) | 0.3 | Vdc |
| Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VBE(sat) | 0.6 | Vdc |
Key Features
- Pb-Free Device: Compliant with current environmental regulations, making it suitable for modern electronic designs.
- High DC Current Gain: With a DC current gain (hFE) of up to 100, it is suitable for amplifier applications.
- Low Saturation Voltages: Collector-Emitter and Base-Emitter saturation voltages are low, which is beneficial for reducing power consumption in switching applications.
- High Frequency Capability: The current-gain bandwidth product (fT) is up to 300 MHz, making it suitable for high-frequency applications.
- Compact TO-92 Package: Easy to integrate into various electronic circuits due to its small size.
- Wide Operating Temperature Range: Operates from -55°C to +150°C, making it versatile for different environmental conditions.
Applications
- Amplifier Circuits: Suitable for general-purpose amplifier applications due to its high DC current gain and low saturation voltages.
- Switching Circuits: Used in switching applications where fast turn-on and turn-off times are required, with delay times as low as 10 ns and rise times as low as 25 ns.
- Audio and Video Circuits: Can be used in audio and video amplifiers due to its good noise figure and high frequency capability.
- Automotive and Industrial Electronics: Its wide operating temperature range makes it suitable for use in automotive and industrial electronic systems.
Q & A
- What is the maximum collector-emitter voltage for the P2N2222AG transistor?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) is 600 mAdc.
- What is the thermal resistance from junction to ambient for the P2N2222AG?
The thermal resistance from junction to ambient (RθJA) is 200 °C/W.
- What is the DC current gain (hFE) of the P2N2222AG transistor?
The DC current gain (hFE) can be up to 100 for IC = 150 mAdc and VCE = 10 Vdc.
- What are the typical applications of the P2N2222AG transistor?
It is used in amplifier circuits, switching circuits, audio and video circuits, and in automotive and industrial electronics.
- What is the package type of the P2N2222AG transistor?
The transistor is packaged in a TO-92 case.
- Is the P2N2222AG transistor Pb-free?
Yes, the P2N2222AG is a Pb-free device.
- What is the operating temperature range of the P2N2222AG transistor?
The operating and storage junction temperature range is from -55°C to +150°C.
- What are the typical delay and rise times for the P2N2222AG transistor in switching applications?
The delay time (td) is up to 10 ns, and the rise time (tr) is up to 25 ns.
- What is the current-gain bandwidth product (fT) of the P2N2222AG transistor?
The current-gain bandwidth product (fT) is up to 300 MHz.
