NUP4106DR2G
  • Share:

onsemi NUP4106DR2G

Manufacturer No:
NUP4106DR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 3.3VWM 15VC 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NUP4106DR2G is an ESD protection diode array designed and manufactured by onsemi. This component is specifically engineered to protect sensitive electronics from damage caused by Electrostatic Discharge (ESD) events and transient overvoltage conditions. It is particularly suited for high-speed data interfaces and communication systems. The NUP4106DR2G integrates surge-rated, low-capacitance steering diodes and a surge protection diode within a single SO-8 package, making it an efficient solution for protecting multiple data lines and power supply lines.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage @ It = 1.0 mA VBR 5.0 - - V
Reverse Leakage Current @ VRWN = 3.3 V IR - - 5.0 μA
Maximum Clamping Voltage @ IPP = 1.0 A, 8 x 20 μs VC - - 7.0 V
Maximum Clamping Voltage @ IPP = 10 A, 8 x 20 μs VC - - 10 V
Maximum Clamping Voltage @ IPP = 25 A, 8 x 20 μs VC - - 15 V
Capacitance Between I/O Pins and Ground @ VR = 0 V, 1.0 MHz C - 8.0 15 pF
Capacitance Between I/O Pins @ VR = 0 V, 1.0 MHz C - - 4.0 pF
Peak Power Dissipation @ TA = 25°C (Note 1) Ppk - - 500 W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C
Lead Solder Temperature - Maximum 10 Seconds Duration TL - - 260 °C
IEC 61000-4-2 Contact Air ESD - ±8 - ±15 kV

Key Features

  • Low Capacitance: The NUP4106DR2G features low capacitance, making it suitable for high-speed data interfaces.
  • Surge Protection: Designed to protect against ESD and lightning surges with a peak power dissipation of 500 W (8 x 20 μs).
  • ESD Rating: Compliant with IEC 61000-4-2 standards, offering ±8 kV (contact) and ±15 kV (air) ESD protection.
  • Pb-Free and UL94 V-0 Rated: The device is lead-free and has a UL94 V-0 flammability rating.
  • Integrated Design: Includes surge-rated steering diodes and a surge protection diode in a single SO-8 package.
  • Flexible Configuration Options: Can be configured to protect four data lines and the power supply using different reference points.

Applications

  • High-Speed Communication Line Protection: Suitable for protecting high-speed data lines in various communication systems.
  • T1/E1 and T3/E3 Secondary Protection: Used in telecommunication systems for secondary protection.
  • Analog Video Protection: Protects analog video signals from transient overvoltages.
  • Base Stations: Employed in base station equipment for robust ESD protection.
  • I2C Bus Protection: Protects I2C bus lines from ESD events.
  • USB and Ethernet Ports: Used for ESD protection in USB and Ethernet ports.

Q & A

  1. What is the primary function of the NUP4106DR2G?

    The primary function of the NUP4106DR2G is to protect sensitive electronics from damage caused by Electrostatic Discharge (ESD) events and transient overvoltage conditions.

  2. What is the package type of the NUP4106DR2G?

    The NUP4106DR2G is packaged in an SO-8 (Small Outline 8-pin) package.

  3. What is the peak power dissipation of the NUP4106DR2G?

    The peak power dissipation of the NUP4106DR2G is 500 W (8 x 20 μs).

  4. What are the ESD ratings for the NUP4106DR2G?

    The NUP4106DR2G has ESD ratings of ±8 kV (contact) and ±15 kV (air) according to IEC 61000-4-2 standards.

  5. Is the NUP4106DR2G lead-free?

    Yes, the NUP4106DR2G is a lead-free device.

  6. What are the typical applications of the NUP4106DR2G?

    The NUP4106DR2G is typically used in high-speed communication line protection, T1/E1 and T3/E3 secondary protection, analog video protection, base stations, and I2C bus protection.

  7. How does the NUP4106DR2G protect data lines?

    The NUP4106DR2G protects data lines by driving transient currents to a fixed reference point (ground or power supply rail) through its integrated steering diodes.

  8. What are the key features of the NUP4106DR2G's integrated design?

    The integrated design includes surge-rated steering diodes and a surge protection diode in a single package, offering low capacitance and flexible configuration options.

  9. How important is PCB layout in using the NUP4106DR2G?

    Good PCB layout is crucial to minimize the effects of parasitic inductance, which can significantly impact transient immunity and device performance.

  10. Can the NUP4106DR2G be used in USB and Ethernet ports?

    Yes, the NUP4106DR2G can be used for ESD protection in USB and Ethernet ports.

Product Attributes

Type:Steering (Rail to Rail)
Unidirectional Channels:4
Bidirectional Channels:- 
Voltage - Reverse Standoff (Typ):3.3V
Voltage - Breakdown (Min):5V
Voltage - Clamping (Max) @ Ipp:15V
Current - Peak Pulse (10/1000µs):25A (8/20µs)
Power - Peak Pulse:500W
Power Line Protection:Yes
Applications:General Purpose
Capacitance @ Frequency:8pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$2.99
150

Please send RFQ , we will respond immediately.

Related Product By Categories

PESD5V0L1UL,315
PESD5V0L1UL,315
Nexperia USA Inc.
TVS DIODE 5VWM 12VC DFN1006-2
PESD5V0V1BLSYL
PESD5V0V1BLSYL
Nexperia USA Inc.
PESD5V0V1BLS/SOD882BD/XSON2
ESD9B5.0ST5G
ESD9B5.0ST5G
onsemi
TVS DIODE 5VWM SOD923
SMBJ36CA-TR
SMBJ36CA-TR
STMicroelectronics
TVS DIODE 36VWM 58.1VC SMB
SMF15CT1G
SMF15CT1G
onsemi
TVS DIODE 15VWM 29VC SC88/SC70-6
SM6T220CA
SM6T220CA
STMicroelectronics
TVS DIODE 188VWM 388VC SMB
TPD4E001DPKR
TPD4E001DPKR
Texas Instruments
TVS DIODE 5.5VWM 6USON
SM15T36CA
SM15T36CA
STMicroelectronics
TVS DIODE 30.8VWM 64.3VC SMC
BZW50-33BRL
BZW50-33BRL
STMicroelectronics
TVS DIODE 33VWM 76VC R6
SMBJ5.0CA/54
SMBJ5.0CA/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
MMBZ27VCLT1
MMBZ27VCLT1
onsemi
TVS DIODE 22VWM 38VC SOT23-3
SMS24T1
SMS24T1
onsemi
TVS DIODE 24VWM 44VC SC74

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD