NUP4106DR2G
  • Share:

onsemi NUP4106DR2G

Manufacturer No:
NUP4106DR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 3.3VWM 15VC 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NUP4106DR2G is an ESD protection diode array designed and manufactured by onsemi. This component is specifically engineered to protect sensitive electronics from damage caused by Electrostatic Discharge (ESD) events and transient overvoltage conditions. It is particularly suited for high-speed data interfaces and communication systems. The NUP4106DR2G integrates surge-rated, low-capacitance steering diodes and a surge protection diode within a single SO-8 package, making it an efficient solution for protecting multiple data lines and power supply lines.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage @ It = 1.0 mA VBR 5.0 - - V
Reverse Leakage Current @ VRWN = 3.3 V IR - - 5.0 μA
Maximum Clamping Voltage @ IPP = 1.0 A, 8 x 20 μs VC - - 7.0 V
Maximum Clamping Voltage @ IPP = 10 A, 8 x 20 μs VC - - 10 V
Maximum Clamping Voltage @ IPP = 25 A, 8 x 20 μs VC - - 15 V
Capacitance Between I/O Pins and Ground @ VR = 0 V, 1.0 MHz C - 8.0 15 pF
Capacitance Between I/O Pins @ VR = 0 V, 1.0 MHz C - - 4.0 pF
Peak Power Dissipation @ TA = 25°C (Note 1) Ppk - - 500 W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C
Lead Solder Temperature - Maximum 10 Seconds Duration TL - - 260 °C
IEC 61000-4-2 Contact Air ESD - ±8 - ±15 kV

Key Features

  • Low Capacitance: The NUP4106DR2G features low capacitance, making it suitable for high-speed data interfaces.
  • Surge Protection: Designed to protect against ESD and lightning surges with a peak power dissipation of 500 W (8 x 20 μs).
  • ESD Rating: Compliant with IEC 61000-4-2 standards, offering ±8 kV (contact) and ±15 kV (air) ESD protection.
  • Pb-Free and UL94 V-0 Rated: The device is lead-free and has a UL94 V-0 flammability rating.
  • Integrated Design: Includes surge-rated steering diodes and a surge protection diode in a single SO-8 package.
  • Flexible Configuration Options: Can be configured to protect four data lines and the power supply using different reference points.

Applications

  • High-Speed Communication Line Protection: Suitable for protecting high-speed data lines in various communication systems.
  • T1/E1 and T3/E3 Secondary Protection: Used in telecommunication systems for secondary protection.
  • Analog Video Protection: Protects analog video signals from transient overvoltages.
  • Base Stations: Employed in base station equipment for robust ESD protection.
  • I2C Bus Protection: Protects I2C bus lines from ESD events.
  • USB and Ethernet Ports: Used for ESD protection in USB and Ethernet ports.

Q & A

  1. What is the primary function of the NUP4106DR2G?

    The primary function of the NUP4106DR2G is to protect sensitive electronics from damage caused by Electrostatic Discharge (ESD) events and transient overvoltage conditions.

  2. What is the package type of the NUP4106DR2G?

    The NUP4106DR2G is packaged in an SO-8 (Small Outline 8-pin) package.

  3. What is the peak power dissipation of the NUP4106DR2G?

    The peak power dissipation of the NUP4106DR2G is 500 W (8 x 20 μs).

  4. What are the ESD ratings for the NUP4106DR2G?

    The NUP4106DR2G has ESD ratings of ±8 kV (contact) and ±15 kV (air) according to IEC 61000-4-2 standards.

  5. Is the NUP4106DR2G lead-free?

    Yes, the NUP4106DR2G is a lead-free device.

  6. What are the typical applications of the NUP4106DR2G?

    The NUP4106DR2G is typically used in high-speed communication line protection, T1/E1 and T3/E3 secondary protection, analog video protection, base stations, and I2C bus protection.

  7. How does the NUP4106DR2G protect data lines?

    The NUP4106DR2G protects data lines by driving transient currents to a fixed reference point (ground or power supply rail) through its integrated steering diodes.

  8. What are the key features of the NUP4106DR2G's integrated design?

    The integrated design includes surge-rated steering diodes and a surge protection diode in a single package, offering low capacitance and flexible configuration options.

  9. How important is PCB layout in using the NUP4106DR2G?

    Good PCB layout is crucial to minimize the effects of parasitic inductance, which can significantly impact transient immunity and device performance.

  10. Can the NUP4106DR2G be used in USB and Ethernet ports?

    Yes, the NUP4106DR2G can be used for ESD protection in USB and Ethernet ports.

Product Attributes

Type:Steering (Rail to Rail)
Unidirectional Channels:4
Bidirectional Channels:- 
Voltage - Reverse Standoff (Typ):3.3V
Voltage - Breakdown (Min):5V
Voltage - Clamping (Max) @ Ipp:15V
Current - Peak Pulse (10/1000µs):25A (8/20µs)
Power - Peak Pulse:500W
Power Line Protection:Yes
Applications:General Purpose
Capacitance @ Frequency:8pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$2.99
150

Please send RFQ , we will respond immediately.

Related Product By Categories

ESDLIN03-1BWY
ESDLIN03-1BWY
STMicroelectronics
TVS DIODE 26.5VWM 44VC SOT323-3
PESD24VS2UT,215
PESD24VS2UT,215
Nexperia USA Inc.
TVS DIODE 24VWM 70VC TO236AB
PESD12VS1ULD,315
PESD12VS1ULD,315
Nexperia USA Inc.
TVS DIODE 12VWM 35VC DFN1006D-2
ESDA17P100-1U2M
ESDA17P100-1U2M
STMicroelectronics
TVS DIODE 15VWM 30VC 6UQFN
1.5KE68A/B
1.5KE68A/B
YAGEO
1.5KE, DO-201, 58.1V, 92V, BOX
SM15T100A-E3/9AT
SM15T100A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM15T33CA-E3/9AT
SM15T33CA-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SMF33AT1G
SMF33AT1G
Littelfuse Inc.
TVS DIODE 33VWM 53.3VC SOD123FL
SMF15AT1G
SMF15AT1G
Littelfuse Inc.
TVS DIODE 15VWM 24.4VC SOD123FL
SMS24T1
SMS24T1
onsemi
TVS DIODE 24VWM 44VC SC74
SM15T12AHM3_A/I
SM15T12AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T33CAHM3/H
SM15T33CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB

Related Product By Brand

SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
NTMFS015N15MC
NTMFS015N15MC
onsemi
MOSFET N-CH 150V 9.2A/61A 8PQFN
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP