NSVBAT54SWT1G
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onsemi NSVBAT54SWT1G

Manufacturer No:
NSVBAT54SWT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 30V SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSVBAT54SWT1G is a dual series Schottky barrier diode produced by onsemi. This component is designed for high-speed switching applications, circuit protection, and voltage clamping. It features an extremely low forward voltage, which reduces conduction loss, making it highly efficient. The miniature surface mount package (SC-70/SOT-323) is ideal for handheld and portable applications where space is limited.

Key Specifications

Characteristic Symbol Value Unit
Reverse Voltage VR 30 V
Forward Current (DC) IF 200 mA
Non-Repetitive Peak Forward Current IFSM 600 mA
Repetitive Peak Forward Current IFRM 300 mA
Junction Temperature TJ -55 to 125 °C
Storage Temperature Range Tstg -55 to +150 °C
Forward Voltage (Typ) @ IF = 10 mA VF 0.35 V
Reverse Recovery Time trr 5.0 ns
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT 7.6 - 10 pF

Key Features

  • Extremely fast switching speed, making it suitable for high-speed applications.
  • Low forward voltage (0.35 V typ @ IF = 10 mA), reducing conduction loss.
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  • NSV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Miniature surface mount package (SC-70/SOT-323) ideal for handheld and portable applications.

Applications

  • High-speed switching applications.
  • Circuit protection.
  • Voltage clamping.
  • Handheld and portable devices where space is limited.
  • Automotive applications due to AEC-Q101 qualification and PPAP capability.

Q & A

  1. What is the NSVBAT54SWT1G used for?

    The NSVBAT54SWT1G is used for high-speed switching applications, circuit protection, and voltage clamping.

  2. What is the typical forward voltage of the NSVBAT54SWT1G?

    The typical forward voltage is 0.35 volts at a forward current of 10 mA.

  3. What is the maximum reverse voltage of the NSVBAT54SWT1G?

    The maximum reverse voltage is 30 volts.

  4. What is the maximum forward current of the NSVBAT54SWT1G?

    The maximum forward current is 200 mA.

  5. Is the NSVBAT54SWT1G RoHS compliant?
  6. What package type does the NSVBAT54SWT1G come in?

    The NSVBAT54SWT1G comes in a miniature surface mount package (SC-70/SOT-323).

  7. What are the operating temperature ranges for the NSVBAT54SWT1G?

    The junction temperature range is -55°C to 125°C, and the storage temperature range is -55°C to +150°C.

  8. Is the NSVBAT54SWT1G suitable for automotive applications?
  9. What is the reverse recovery time of the NSVBAT54SWT1G?

    The reverse recovery time is 5.0 ns.

  10. What is the total capacitance of the NSVBAT54SWT1G?

    The total capacitance is 7.6 to 10 pF at VR = 1.0 V and f = 1.0 MHz.

Product Attributes

Diode Configuration:1 Pair Series Connection
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Operating Temperature - Junction:-55°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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