Overview
The NCV57000DWR2G, produced by onsemi, is a high-current single-channel IGBT (Insulated Gate Bipolar Transistor) gate driver designed for high system efficiency and reliability in high-power applications. This device features internal galvanic isolation, making it suitable for applications requiring high safety and performance standards. It supports both 5 V and 3.3 V input signals and has a wide bias voltage range, including negative voltage capability. The NCV57000DWR2G is AEC-Q100 certified and RoHS compliant, ensuring its suitability for automotive and other demanding environments.
Key Specifications
Parameter | Minimum | Typical | Maximum | Unit |
---|---|---|---|---|
Supply Voltage, Input Side (VDD1-GND1) | -0.3 | - | 6 | V |
Positive Power Supply, Output Side (VDD2-GND2) | -0.3 | - | 25 | V |
Negative Power Supply, Output Side (VEE2-GND2) | -10 | - | 0.3 | V |
Differential Power Supply, Output Side (VDD2-VEE2) | 0 | - | 25 | V |
Gate-Driver Output Sourcing Current (IPK-SRC) | - | - | 7.8 | A |
Ambient Temperature (TA) | -40 | - | 125 | °C |
Galvanic Isolation (UL1577 Rating) | - | - | 5000 Vrms | - |
Working Voltage (VDE0884-11 Requirements) | - | - | 1200 Viorm | - |
Key Features
- High Current Output (+4/-6 A) at IGBT Miller Plateau Voltages
- Low Output Impedance for Enhanced IGBT Driving
- Short Propagation Delays with Accurate Matching
- Active Miller Clamp to Prevent Spurious Gate Turn-on
- DESAT Protection with Programmable Delay
- Negative Voltage (Down to -9 V) Capability for DESAT
- Soft Turn Off During IGBT Short Circuit
- IGBT Gate Clamping During Short Circuit
- IGBT Gate Active Pull Down
- Tight UVLO Thresholds for Bias Flexibility
- Wide Bias Voltage Range including Negative VEE2
- 3.3 V to 5 V Input Supply Voltage
- Designed for AEC-Q100 Certification
- High Transient Immunity and High Electromagnetic Immunity
- Pb-Free, Halogen Free, and RoHS Compliant
Applications
- Automotive Power Supplies
- HEV/EV Powertrain
- OBC (On-Board Charger)
- BSG (Belt Starter Generator)
- EV Charger
- PTC Heater
Q & A
- What is the NCV57000DWR2G used for?
The NCV57000DWR2G is a high-current single-channel IGBT gate driver used in high-power applications such as automotive power supplies, HEV/EV powertrains, and EV chargers.
- What are the key features of the NCV57000DWR2G?
Key features include high current output, low output impedance, active Miller clamp, DESAT protection, and wide bias voltage range including negative voltage capability.
- What is the galvanic isolation rating of the NCV57000DWR2G?
The device provides > 5 kVrms galvanic isolation to meet UL1577 requirements.
- What is the working voltage capability of the NCV57000DWR2G?
The device has a working voltage capability of > 1200 Viorm as per VDE0884-11 requirements.
- Is the NCV57000DWR2G AEC-Q100 certified?
- What is the package type of the NCV57000DWR2G?
The device is available in a wide-body SOIC-16 package.
- What are the input and output voltage ranges for the NCV57000DWR2G?
The input side supports 3.3 V to 5 V, and the output side has a wide bias voltage range including negative voltage capability.
- Does the NCV57000DWR2G have DESAT protection?
- Is the NCV57000DWR2G RoHS compliant?
- What are the typical applications of the NCV57000DWR2G?
- What is the ambient temperature range for the NCV57000DWR2G?