NCP81071BMNTXG
  • Share:

onsemi NCP81071BMNTXG

Manufacturer No:
NCP81071BMNTXG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR LOW-SIDE 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NCP81071BMNTXG is a high-speed dual low-side MOSFET driver produced by onsemi. This component is designed to provide large peak currents into capacitive loads, making it suitable for applications requiring high current drive capability. The NCP81071BMNTXG can deliver 5 A peak current at the Miller plateau region, which helps reduce the Miller effect during MOSFET switching transitions. It also features enable functions for each driver, enhancing control capabilities in various applications. The device is available in a WDFN8 3 mm x 3 mm package and supports a wide range of operating temperatures from -40°C to 140°C.

Key Specifications

Parameter Symbol Min Typ Max Units
Supply Voltage VDD -0.3 24 V
Output Current (DC) Iout_dc 0.3 0.3 A
Reverse Current (Pulse < 1 μs) 6.0 A
Output Current (Pulse < 0.5 μs) Iout_pulse 6.0 A
Input Voltage INA, INB -6.0 VDD+0.3 V
Enable Voltage ENA, ENB -0.3 VDD+0.3 V
Output Voltage OUTA, OUTB -0.3 VDD+0.3 V
Junction Operation Temperature TJ -40 140 °C
VDD Under Voltage Lockout (rising) VCCR 3.5 4.0 4.5 V
VDD Under Voltage Lockout (hysteresis) VCCH 400 mV
Operating Current (no switching) IDD 1.4 3 mA

Key Features

  • High Current Drive Capability: ±5 A peak current to drive the gate of power MOSFETs effectively.
  • TTL/CMOS Compatible Inputs: Inputs are independent of supply voltage, ensuring compatibility with a wide range of logic levels.
  • Industry Standard Pin-out: Compatible with standard pin configurations, making it easy to integrate into existing designs.
  • High Reverse Current Capability: Up to 6 A peak reverse current to handle high-capacitive loads.
  • Enable Functions: Each driver has an enable function (ENA and ENB) for better control in different applications. These pins are internally pulled up to the driver’s input voltage for active high logic and can be left open for standard operations.

Applications

The NCP81071BMNTXG is suitable for a variety of high-performance applications, including:

  • Power Supplies: High-efficiency power supplies, such as DC-DC converters and power factor correction (PFC) circuits.
  • Motor Control: Motor drive systems that require high current and fast switching times.
  • Industrial Automation: Control systems in industrial automation that need reliable and high-speed MOSFET drivers.
  • Aerospace and Defense: High-reliability applications in aerospace and defense where robust and efficient MOSFET driving is critical.

Q & A

  1. What is the peak current drive capability of the NCP81071BMNTXG?

    The NCP81071BMNTXG can deliver up to ±5 A peak current.

  2. What are the enable functions on the NCP81071BMNTXG?

    The device features enable functions (ENA and ENB) for each driver, which are internally pulled up to the driver’s input voltage for active high logic.

  3. What is the operating temperature range of the NCP81071BMNTXG?

    The operating temperature range is from -40°C to 140°C.

  4. What are the available package types for the NCP81071BMNTXG?

    The device is available in MSOP8-EP, SOIC8, and WDFN8 3 mm x 3 mm packages.

  5. How does the NCP81071BMNTXG reduce the Miller effect?

    The device delivers 5 A peak current at the Miller plateau region to help reduce the Miller effect during MOSFET switching transitions.

  6. What is the typical operating current of the NCP81071BMNTXG when not switching?

    The typical operating current (IDD) when not switching is around 1.4 to 3 mA.

  7. What is the VDD under voltage lockout (hysteresis) for the NCP81071BMNTXG?

    The VDD under voltage lockout (hysteresis) is 400 mV.

  8. How should the thermal pad of the NCP81071BMNTXG be connected?

    The thermal pad must be connected to a ground plane, and several ground layers should be added to maximize heatsinking capability.

  9. What are some recommended layout guidelines for using the NCP81071BMNTXG?

    Place the driver close to the driven MOSFET, use a bypass capacitor between VDD and GND close to the driver, and minimize inductance by using low-inductance components and paralleled vias.

  10. Is the NCP81071BMNTXG compatible with TTL and CMOS inputs?

    Yes, the inputs are TTL/CMOS compatible and independent of the supply voltage.

Product Attributes

Driven Configuration:Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:4.5V ~ 20V
Logic Voltage - VIL, VIH:1.2V, 1.8V
Current - Peak Output (Source, Sink):5A, 5A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):8ns, 8ns
Operating Temperature:-40°C ~ 140°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-WDFN Exposed Pad
Supplier Device Package:8-WDFN (3x3)
0 Remaining View Similar

In Stock

$1.67
512

Please send RFQ , we will respond immediately.

Same Series
NCP81071CMNTXG
NCP81071CMNTXG
IC GATE DRVR LOW-SIDE 8WDFN
NCP81071ADR2G
NCP81071ADR2G
IC GATE DRVR LOW-SIDE 8SOIC
NCP81071BZR2G
NCP81071BZR2G
IC GATE DRVR LOW-SIDE 8MSOP
NCP81071BMNTXG
NCP81071BMNTXG
IC GATE DRVR LOW-SIDE 8WDFN
NCP81071CDR2G
NCP81071CDR2G
IC GATE DRVR LOW-SIDE 8SOIC
NCP81071AMNTXG
NCP81071AMNTXG
IC GATE DRVR LOW-SIDE 8WDFN
NCP81071AZR2G
NCP81071AZR2G
IC GATE DRVR LOW-SIDE 8MSOP
NCP81071CZR2G
NCP81071CZR2G
IC GATE DRVR LOW-SIDE 8MSOP

Similar Products

Part Number NCP81071BMNTXG NCP81071CMNTXG NCP81071AMNTXG
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Driven Configuration Low-Side Low-Side Low-Side
Channel Type Independent Independent Independent
Number of Drivers 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 4.5V ~ 20V 4.5V ~ 20V 4.5V ~ 20V
Logic Voltage - VIL, VIH 1.2V, 1.8V 1.2V, 1.8V 1.2V, 1.8V
Current - Peak Output (Source, Sink) 5A, 5A 5A, 5A 5A, 5A
Input Type Non-Inverting Inverting, Non-Inverting Inverting
High Side Voltage - Max (Bootstrap) - - -
Rise / Fall Time (Typ) 8ns, 8ns 8ns, 8ns 8ns, 8ns
Operating Temperature -40°C ~ 140°C (TJ) -40°C ~ 140°C (TJ) -40°C ~ 140°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-WDFN Exposed Pad 8-WDFN Exposed Pad 8-WDFN Exposed Pad
Supplier Device Package 8-WDFN (3x3) 8-WDFN (3x3) 8-WDFN (3x3)

Related Product By Categories

MC33152DR2G
MC33152DR2G
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP5106ADR2G
NCP5106ADR2G
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
FAN7391MX
FAN7391MX
onsemi
IC GATE DRVR HALF-BRIDGE 14SOP
L6384ED013TR
L6384ED013TR
STMicroelectronics
IC GATE DRVR HALF-BRIDGE 8SO
LTC7000EMSE-1#TRPBF
LTC7000EMSE-1#TRPBF
Analog Devices Inc.
IC GATE DRVR HIGH-SIDE 16MSOP
FAN3227TMX-F085
FAN3227TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
FAN7085MX-GF085
FAN7085MX-GF085
onsemi
IC GATE DRVR HIGH-SIDE 8SOIC
TPS2819QDBVRQ1
TPS2819QDBVRQ1
Texas Instruments
IC GATE DRVR LOW-SIDE SOT23-5
LM5106SDX/NOPB
LM5106SDX/NOPB
Texas Instruments
IC GATE DRVR HALF-BRIDGE 10WSON
ADUM4221BRIZ-RL
ADUM4221BRIZ-RL
Analog Devices Inc.
ISO 1/2 BRIDGE DRV W/DEADTIME UV
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
LM5112MYX
LM5112MYX
Texas Instruments
IC GATE DRVR LOW-SIDE 8MSOP

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5