Overview
The NCN6010DTBR2G, produced by onsemi, is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller. This device is particularly useful in applications requiring compatibility with different voltage levels between the SIM card and the microcontroller. It features a built-in DC-DC converter, enabling it to drive any type of SIM card, and it complies with the GSM 11.11 specification.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Power Supply Voltage | VDD | 2.7 | 3.6 | 7.0 | V |
| External Card Power Supply Voltage | SIM_VCC | - | - | 7.0 | V |
| Digital Input Voltage | VIH/VIL | 0.3 * VDD | - | 0.7 * VDD | V |
| Input Rise/Fall Time | tr/tf | - | 50 | - | ns |
| Input Capacitance | Cin | - | 10 | - | pF |
| ESD Protection on SIM Card Pins | - | - | - | 6.0 kV | - |
| Operating Temperature | - | -25 | - | 85 | °C |
Key Features
- Supports 3.0 V or 5.0 V operating SIM cards
- Built-in pull-up resistor for I/O pin in both directions
- All pins are fully ESD protected, according to GSM specification
- Supports 10 MHz clock
- 6.0 kV ESD proof on SIM card pins
- Pb-Free device
- Built-in DC-DC converter for voltage translation
- Bi-directional I/O line with active pull-up circuit
- Built-in Schmitt trigger circuits for logic inputs
Applications
- Cellular phone SIM interface
- Identification modules
Q & A
- What is the primary function of the NCN6010DTBR2G?
The primary function of the NCN6010DTBR2G is to translate the voltages between a SIM Card and an external microcontroller, ensuring compatibility and proper operation.
- What voltage levels does the NCN6010DTBR2G support for SIM cards?
The NCN6010DTBR2G supports both 3.0 V and 5.0 V operating SIM cards.
- How does the NCN6010DTBR2G protect against ESD?
The NCN6010DTBR2G features all pins fully ESD protected, according to GSM specifications, with 6.0 kV ESD proof on SIM card pins.
- What is the role of the built-in DC-DC converter?
The built-in DC-DC converter allows the NCN6010DTBR2G to drive any type of SIM card by translating the voltage levels as needed.
- How does the NCN6010DTBR2G handle power down sequences?
The NCN6010DTBR2G follows the ISO7816-3 power down sequence, ensuring that the SIM card supply is disabled and all interface pins are set to low when the PWR_ON signal is low or the STOP pin is asserted low.
- What type of capacitors are recommended for use with the NCN6010DTBR2G?
High-quality, low ESR ceramic capacitors (such as X5R or X7R types) are recommended for optimal performance.
- How does the bi-directional I/O line work?
The bi-directional I/O line automatically adapts the voltage difference between the microcontroller and the SIM card, using an active pull-up circuit to ensure fast charging of stray capacitance.
- What is the purpose of the Schmitt trigger circuits in the NCN6010DTBR2G?
The Schmitt trigger circuits prevent uncontrolled operation by ensuring that output signals go high when the input voltage is above 0.70*Vbat and go low when the input voltage is below 0.30*Vbat.
- What is the typical operating frequency of the clock supported by the NCN6010DTBR2G?
The NCN6010DTBR2G supports a clock frequency of up to 10 MHz.
- How is the SIM_VCC voltage programmed in the NCN6010DTBR2G?
The SIM_VCC voltage is programmed using the MOD_VCC pin, where MOD_VCC = Low sets SIM_VCC to 5.0 V and MOD_VCC = High sets SIM_VCC to 3.0 V, provided that PWR_ON is low during the programming.
