MPSA92RLRMG
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onsemi MPSA92RLRMG

Manufacturer No:
MPSA92RLRMG
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 300V 0.5A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MPSA92RLRMG is a High Voltage PNP Bipolar Transistor produced by onsemi. This device is designed for general purpose amplifier applications and is housed in the TO-92 package. It is part of the MPSA92 series, which is known for its high voltage handling capabilities and low VCE(sat) characteristics.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO -300 Vdc
Collector-Base Voltage VCBO -300 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current - Continuous IC -500 mAdc
Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 °C
Total Device Dissipation @ TA = 25°C PD 625 mW / 5.0 mW/°C mW / mW/°C
Thermal Resistance, Junction to Ambient RθJA 200 °C/W °C/W
Thermal Resistance, Junction to Case RθJC 83.3 °C/W °C/W
DC Current Gain (hFE) hFE 25 - 40 -
Collector-Emitter Saturation Voltage (VCE(sat)) VCE(sat) -0.5 Vdc Vdc
Base-Emitter Saturation Voltage (VBE(sat)) VBE(sat) -0.9 Vdc Vdc
Current-Gain - Bandwidth Product (fT) fT 50 MHz MHz

Key Features

  • High Voltage PNP Bipolar Transistor with a maximum collector-emitter voltage of -300 Vdc.
  • Low VCE(sat) of -0.5 Vdc, making it suitable for applications requiring low saturation voltage.
  • High DC current gain (hFE) ranging from 25 to 40.
  • Wide operating and storage junction temperature range of -55 to +150 °C.
  • Pb-Free TO-92 package, making it compliant with environmental regulations.
  • High thermal resistance, junction to ambient (RθJA) of 200 °C/W and junction to case (RθJC) of 83.3 °C/W.

Applications

  • General purpose amplifier applications.
  • High voltage driver applications.
  • Switching and linear amplification in various electronic circuits.
  • Automotive and industrial control systems where high voltage handling is required.

Q & A

  1. What is the maximum collector-emitter voltage of the MPSA92RLRMG transistor?

    The maximum collector-emitter voltage (VCEO) is -300 Vdc.

  2. What is the package type of the MPSA92RLRMG transistor?

    The transistor is housed in a Pb-Free TO-92 package.

  3. What is the DC current gain (hFE) range of the MPSA92RLRMG transistor?

    The DC current gain (hFE) ranges from 25 to 40.

  4. What is the collector-emitter saturation voltage (VCE(sat)) of the MPSA92RLRMG transistor?

    The collector-emitter saturation voltage (VCE(sat)) is -0.5 Vdc.

  5. What is the thermal resistance, junction to ambient (RθJA), of the MPSA92RLRMG transistor?

    The thermal resistance, junction to ambient (RθJA), is 200 °C/W.

  6. What is the operating and storage junction temperature range of the MPSA92RLRMG transistor?

    The operating and storage junction temperature range is -55 to +150 °C.

  7. What are some typical applications of the MPSA92RLRMG transistor?

    Typical applications include general purpose amplifier applications, high voltage driver applications, and switching and linear amplification in various electronic circuits.

  8. Is the MPSA92RLRMG transistor Pb-Free?

    Yes, the MPSA92RLRMG transistor is Pb-Free, making it compliant with environmental regulations.

  9. What is the current-gain - bandwidth product (fT) of the MPSA92RLRMG transistor?

    The current-gain - bandwidth product (fT) is 50 MHz.

  10. How much collector current can the MPSA92RLRMG transistor handle continuously?

    The transistor can handle a continuous collector current (IC) of -500 mAdc.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 2mA, 20mA
Current - Collector Cutoff (Max):250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 30mA, 10V
Power - Max:625 mW
Frequency - Transition:50MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package:TO-92 (TO-226)
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Similar Products

Part Number MPSA92RLRMG MPSA93RLRMG MPSA92RLRPG MPSA92RLRAG
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Obsolete
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 200 V 300 V 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA 400mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 250nA (ICBO) 250nA (ICBO) 250nA (ICBO) 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA, 10V 25 @ 30mA, 10V 25 @ 30mA, 10V 25 @ 30mA, 10V
Power - Max 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 50MHz 50MHz 50MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226)

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