MJH6284G
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onsemi MJH6284G

Manufacturer No:
MJH6284G
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN DARL 100V 20A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJH6284G is a Darlington complementary silicon power transistor produced by onsemi. This NPN transistor is part of the MJH6284 series, which includes the PNP counterpart MJH6287. It is designed for general-purpose amplifier and low-speed switching applications, particularly in motor control. The device features a monolithic construction with a built-in collector-emitter diode, enhancing its reliability and performance.

Key Specifications

Characteristic Symbol Max Unit Description
Collector-Emitter Voltage VCEO 100 Vdc Maximum collector-emitter voltage
Collector-Base Voltage VCB 100 Vdc Maximum collector-base voltage
Emitter-Base Voltage VEB 5.0 Vdc Maximum emitter-base voltage
Collector Current - Continuous IC 20 Adc Continuous collector current
Collector Current - Peak IC 40 Adc Peak collector current
Base Current IB 0.5 Adc Maximum base current
Total Device Dissipation PD 160 W Total device power dissipation at TC = 25°C
Thermal Resistance, Junction-to-Case RJC 0.78 °C/W Thermal resistance from junction to case
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 °C Operating and storage junction temperature range
DC Current Gain hFE 750 - 18,000 DC current gain at IC = 10 Adc, VCE = 3.0 Vdc
Collector-Emitter Saturation Voltage VCE(sat) 2.0 - 3.0 Vdc Collector-emitter saturation voltage at IC = 10 Adc, IB = 40 mAdc
Base-Emitter On Voltage VBE(on) 2.8 Vdc Base-emitter on voltage at IC = 10 Adc, VCE = 3.0 Vdc
Base-Emitter Saturation Voltage VBE(sat) 4.0 Vdc Base-emitter saturation voltage at IC = 20 Adc, IB = 200 mAdc
Current-Gain Bandwidth Product fT 4.0 MHz Current-gain bandwidth product at IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz

Key Features

  • Monolithic Construction: The MJH6284G features a monolithic construction with a built-in collector-emitter diode, enhancing its reliability and performance.
  • Rugged RBSOA Characteristics: The device has robust RBSOA (Reverse Bias Safe Operating Area) characteristics, ensuring safe operation under various conditions.
  • High Current Gain: It offers a high DC current gain (hFE) ranging from 750 to 18,000, making it suitable for amplification and switching applications.
  • Low Saturation Voltage: The collector-emitter saturation voltage (VCE(sat)) is low, typically between 2.0 to 3.0 Vdc, which is beneficial for reducing power losses.
  • Pb-Free Packaging: The device is available in Pb-free packaging, making it compliant with environmental regulations.
  • Wide Operating Temperature Range: It operates over a wide junction temperature range of -65 to +150 °C, making it versatile for various applications.

Applications

The MJH6284G is designed for general-purpose amplifier and low-speed switching applications, particularly in:

  • Motor Control: Suitable for controlling DC motors and other low-speed switching applications.
  • Power Amplifiers: Used in power amplifier circuits where high current gain and low saturation voltage are required.
  • Industrial Automation: Can be used in various industrial automation applications requiring reliable and robust transistor performance.
  • Consumer Electronics: Applicable in consumer electronics where power management and amplification are necessary.

Q & A

  1. What is the maximum collector-emitter voltage of the MJH6284G?

    The maximum collector-emitter voltage (VCEO) is 100 Vdc.

  2. What is the continuous collector current rating of the MJH6284G?

    The continuous collector current (IC) is 20 Adc.

  3. What is the thermal resistance from junction to case for the MJH6284G?

    The thermal resistance from junction to case (RJC) is 0.78 °C/W.

  4. What is the DC current gain range of the MJH6284G?

    The DC current gain (hFE) ranges from 750 to 18,000.

  5. What is the collector-emitter saturation voltage of the MJH6284G?

    The collector-emitter saturation voltage (VCE(sat)) is typically between 2.0 to 3.0 Vdc.

  6. Is the MJH6284G Pb-free?
  7. What is the operating temperature range of the MJH6284G?

    The operating and storage junction temperature range is -65 to +150 °C.

  8. What are the typical applications of the MJH6284G?

    The MJH6284G is typically used in motor control, power amplifiers, industrial automation, and consumer electronics.

  9. What is the current-gain bandwidth product of the MJH6284G?

    The current-gain bandwidth product (fT) is 4.0 MHz.

  10. Does the MJH6284G have a built-in diode?

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):20 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 200mA, 20A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 10A, 3V
Power - Max:160 W
Frequency - Transition:4MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Same Series
MJH6287G
MJH6287G
TRANS PNP DARL 100V 20A TO247-3
MJH6284
MJH6284
TRANS NPN DARL 100V 20A SOT93
MJH6287
MJH6287
TRANS PNP DARL 100V 20A SOT93

Similar Products

Part Number MJH6284G MJH6287G MJH6284
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type NPN - Darlington PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 20 A 20 A 20 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 3V @ 200mA, 20A 3V @ 200mA, 20A 3V @ 200mA, 20A
Current - Collector Cutoff (Max) 1mA 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 10A, 3V 750 @ 10A, 3V 750 @ 10A, 3V
Power - Max 160 W 160 W 160 W
Frequency - Transition 4MHz 4MHz 4MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-218-3
Supplier Device Package TO-247-3 TO-247-3 SOT-93

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