MBRD660CTT4H
  • Share:

onsemi MBRD660CTT4H

Manufacturer No:
MBRD660CTT4H
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRD660CTT4G, produced by onsemi, is a high-performance Schottky barrier rectifier designed for use in switching power supplies, inverters, and as free-wheeling diodes. This device is part of the MBRD620CT series and is known for its fast switching capabilities and low forward voltage drop. It is packaged in a DPAK-3 surface mount package, making it suitable for a variety of applications requiring high efficiency and reliability.

Key Specifications

RatingSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM60V
Average Rectified Forward Current (TC = 130°C)IF(AV)6A
Peak Repetitive Forward Current (TC = 130°C, Square Wave, Duty = 0.5)IFRM6A
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz)IFSM75A
Peak Repetitive Reverse Surge Current (2 μs, 1 kHz)IRRM1A
Operating Junction TemperatureTJ-65 to +175°C
Storage TemperatureTstg-65 to +175°C
Maximum Instantaneous Forward Voltage (iF = 6 Amps, TC = 25°C)VF0.9V
Maximum Thermal Resistance, Junction-to-CaseRθJC6°C/W
Maximum Thermal Resistance, Junction-to-AmbientRθJA80°C/W

Key Features

  • Extremely fast switching capabilities.
  • Extremely low forward voltage drop.
  • Platinum barrier with avalanche guardrings.
  • Pb-free and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Corrosion-resistant finish and readily solderable terminal leads.
  • High ESD ratings (Machine Model = C, Human Body Model = 3B).

Applications

The MBRD660CTT4G is designed for use in various high-performance applications, including:

  • Switching power supplies.
  • Inverters.
  • Free-wheeling diodes.
  • Automotive systems (with NRVBD and SBRV prefixes).
  • Other applications requiring high efficiency and reliability.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRD660CTT4G?
    The peak repetitive reverse voltage (VRRM) is 60 volts.
  2. What is the average rectified forward current at TC = 130°C?
    The average rectified forward current (IF(AV)) is 6 amps.
  3. What is the maximum instantaneous forward voltage at iF = 6 amps and TC = 25°C?
    The maximum instantaneous forward voltage (VF) is 0.9 volts.
  4. What are the operating and storage temperature ranges for this device?
    The operating and storage temperature ranges are -65 to +175°C.
  5. Is the MBRD660CTT4G Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  6. What are the ESD ratings for this device?
    The ESD ratings are Machine Model = C and Human Body Model = 3B.
  7. What is the maximum thermal resistance, junction-to-case (RθJC), for this device?
    The maximum thermal resistance, junction-to-case (RθJC), is 6°C/W.
  8. What is the maximum thermal resistance, junction-to-ambient (RθJA), for this device when surface mounted on the minimum pad size recommended?
    The maximum thermal resistance, junction-to-ambient (RθJA), is 80°C/W.
  9. What are some typical applications for the MBRD660CTT4G?
    Typical applications include switching power supplies, inverters, free-wheeling diodes, and automotive systems.
  10. Is the MBRD660CTT4G AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified and PPAP capable for automotive and other specific applications.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io) (per Diode):3A
Voltage - Forward (Vf) (Max) @ If:700 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 60 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

-
140

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MBRD660CTT4H MBRD640CTT4H MBRD660CTT4 MBRD660CTT4G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 40 V 60 V 60 V
Current - Average Rectified (Io) (per Diode) 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 100 µA @ 60 V 100 µA @ 40 V 100 µA @ 60 V 100 µA @ 60 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK DPAK

Related Product By Categories

BYV44-500,127
BYV44-500,127
WeEn Semiconductors
DIODE ARRAY GP 500V 30A TO220AB
BYV34-400,127
BYV34-400,127
WeEn Semiconductors
DIODE ARRAY GP 400V 20A TO220AB
BAS16VY,115
BAS16VY,115
Nexperia USA Inc.
DIODE ARRAY GP 100V 200MA 6TSSOP
BAS21VD,165
BAS21VD,165
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BAV70HDWQ-13
BAV70HDWQ-13
Diodes Incorporated
DIODE FS 100V 125MA SOT363
STTH6002CPI
STTH6002CPI
STMicroelectronics
DIODE ARRAY GP 200V 30A 3TOPI
BYQ28EB-150HE3_A/P
BYQ28EB-150HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 150V 5A TO263AB
MURB1620CT-T-F
MURB1620CT-T-F
Diodes Incorporated
DIODE ARRAY GP 200V 16A D2PAK
BAS40-06T-7-F-36
BAS40-06T-7-F-36
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT523
BAT54C-7-G
BAT54C-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
BAV99-QR
BAV99-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAV99T116
BAV99T116
Rohm Semiconductor
DIODE ARRAY GP 75V 215MA SSD3

Related Product By Brand

SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN