Overview
The MBRD660CTT4G, produced by onsemi, is a high-performance Schottky barrier rectifier designed for use in switching power supplies, inverters, and as free-wheeling diodes. This device is part of the MBRD620CT series and is known for its fast switching capabilities and low forward voltage drop. It is packaged in a DPAK-3 surface mount package, making it suitable for a variety of applications requiring high efficiency and reliability.
Key Specifications
Rating | Symbol | Value | Unit |
---|---|---|---|
Peak Repetitive Reverse Voltage | VRRM | 60 | V |
Average Rectified Forward Current (TC = 130°C) | IF(AV) | 6 | A |
Peak Repetitive Forward Current (TC = 130°C, Square Wave, Duty = 0.5) | IFRM | 6 | A |
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) | IFSM | 75 | A |
Peak Repetitive Reverse Surge Current (2 μs, 1 kHz) | IRRM | 1 | A |
Operating Junction Temperature | TJ | -65 to +175 | °C |
Storage Temperature | Tstg | -65 to +175 | °C |
Maximum Instantaneous Forward Voltage (iF = 6 Amps, TC = 25°C) | VF | 0.9 | V |
Maximum Thermal Resistance, Junction-to-Case | RθJC | 6 | °C/W |
Maximum Thermal Resistance, Junction-to-Ambient | RθJA | 80 | °C/W |
Key Features
- Extremely fast switching capabilities.
- Extremely low forward voltage drop.
- Platinum barrier with avalanche guardrings.
- Pb-free and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Corrosion-resistant finish and readily solderable terminal leads.
- High ESD ratings (Machine Model = C, Human Body Model = 3B).
Applications
The MBRD660CTT4G is designed for use in various high-performance applications, including:
- Switching power supplies.
- Inverters.
- Free-wheeling diodes.
- Automotive systems (with NRVBD and SBRV prefixes).
- Other applications requiring high efficiency and reliability.
Q & A
- What is the peak repetitive reverse voltage of the MBRD660CTT4G?
The peak repetitive reverse voltage (VRRM) is 60 volts. - What is the average rectified forward current at TC = 130°C?
The average rectified forward current (IF(AV)) is 6 amps. - What is the maximum instantaneous forward voltage at iF = 6 amps and TC = 25°C?
The maximum instantaneous forward voltage (VF) is 0.9 volts. - What are the operating and storage temperature ranges for this device?
The operating and storage temperature ranges are -65 to +175°C. - Is the MBRD660CTT4G Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant. - What are the ESD ratings for this device?
The ESD ratings are Machine Model = C and Human Body Model = 3B. - What is the maximum thermal resistance, junction-to-case (RθJC), for this device?
The maximum thermal resistance, junction-to-case (RθJC), is 6°C/W. - What is the maximum thermal resistance, junction-to-ambient (RθJA), for this device when surface mounted on the minimum pad size recommended?
The maximum thermal resistance, junction-to-ambient (RθJA), is 80°C/W. - What are some typical applications for the MBRD660CTT4G?
Typical applications include switching power supplies, inverters, free-wheeling diodes, and automotive systems. - Is the MBRD660CTT4G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable for automotive and other specific applications.