MBRD660CTT4H
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onsemi MBRD660CTT4H

Manufacturer No:
MBRD660CTT4H
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRD660CTT4G, produced by onsemi, is a high-performance Schottky barrier rectifier designed for use in switching power supplies, inverters, and as free-wheeling diodes. This device is part of the MBRD620CT series and is known for its fast switching capabilities and low forward voltage drop. It is packaged in a DPAK-3 surface mount package, making it suitable for a variety of applications requiring high efficiency and reliability.

Key Specifications

RatingSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM60V
Average Rectified Forward Current (TC = 130°C)IF(AV)6A
Peak Repetitive Forward Current (TC = 130°C, Square Wave, Duty = 0.5)IFRM6A
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz)IFSM75A
Peak Repetitive Reverse Surge Current (2 μs, 1 kHz)IRRM1A
Operating Junction TemperatureTJ-65 to +175°C
Storage TemperatureTstg-65 to +175°C
Maximum Instantaneous Forward Voltage (iF = 6 Amps, TC = 25°C)VF0.9V
Maximum Thermal Resistance, Junction-to-CaseRθJC6°C/W
Maximum Thermal Resistance, Junction-to-AmbientRθJA80°C/W

Key Features

  • Extremely fast switching capabilities.
  • Extremely low forward voltage drop.
  • Platinum barrier with avalanche guardrings.
  • Pb-free and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Corrosion-resistant finish and readily solderable terminal leads.
  • High ESD ratings (Machine Model = C, Human Body Model = 3B).

Applications

The MBRD660CTT4G is designed for use in various high-performance applications, including:

  • Switching power supplies.
  • Inverters.
  • Free-wheeling diodes.
  • Automotive systems (with NRVBD and SBRV prefixes).
  • Other applications requiring high efficiency and reliability.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRD660CTT4G?
    The peak repetitive reverse voltage (VRRM) is 60 volts.
  2. What is the average rectified forward current at TC = 130°C?
    The average rectified forward current (IF(AV)) is 6 amps.
  3. What is the maximum instantaneous forward voltage at iF = 6 amps and TC = 25°C?
    The maximum instantaneous forward voltage (VF) is 0.9 volts.
  4. What are the operating and storage temperature ranges for this device?
    The operating and storage temperature ranges are -65 to +175°C.
  5. Is the MBRD660CTT4G Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  6. What are the ESD ratings for this device?
    The ESD ratings are Machine Model = C and Human Body Model = 3B.
  7. What is the maximum thermal resistance, junction-to-case (RθJC), for this device?
    The maximum thermal resistance, junction-to-case (RθJC), is 6°C/W.
  8. What is the maximum thermal resistance, junction-to-ambient (RθJA), for this device when surface mounted on the minimum pad size recommended?
    The maximum thermal resistance, junction-to-ambient (RθJA), is 80°C/W.
  9. What are some typical applications for the MBRD660CTT4G?
    Typical applications include switching power supplies, inverters, free-wheeling diodes, and automotive systems.
  10. Is the MBRD660CTT4G AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified and PPAP capable for automotive and other specific applications.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io) (per Diode):3A
Voltage - Forward (Vf) (Max) @ If:700 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 60 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MBRD660CTT4H MBRD640CTT4H MBRD660CTT4 MBRD660CTT4G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 40 V 60 V 60 V
Current - Average Rectified (Io) (per Diode) 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 100 µA @ 60 V 100 µA @ 40 V 100 µA @ 60 V 100 µA @ 60 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK DPAK

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