MBRD660CTT4H
  • Share:

onsemi MBRD660CTT4H

Manufacturer No:
MBRD660CTT4H
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRD660CTT4G, produced by onsemi, is a high-performance Schottky barrier rectifier designed for use in switching power supplies, inverters, and as free-wheeling diodes. This device is part of the MBRD620CT series and is known for its fast switching capabilities and low forward voltage drop. It is packaged in a DPAK-3 surface mount package, making it suitable for a variety of applications requiring high efficiency and reliability.

Key Specifications

RatingSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM60V
Average Rectified Forward Current (TC = 130°C)IF(AV)6A
Peak Repetitive Forward Current (TC = 130°C, Square Wave, Duty = 0.5)IFRM6A
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz)IFSM75A
Peak Repetitive Reverse Surge Current (2 μs, 1 kHz)IRRM1A
Operating Junction TemperatureTJ-65 to +175°C
Storage TemperatureTstg-65 to +175°C
Maximum Instantaneous Forward Voltage (iF = 6 Amps, TC = 25°C)VF0.9V
Maximum Thermal Resistance, Junction-to-CaseRθJC6°C/W
Maximum Thermal Resistance, Junction-to-AmbientRθJA80°C/W

Key Features

  • Extremely fast switching capabilities.
  • Extremely low forward voltage drop.
  • Platinum barrier with avalanche guardrings.
  • Pb-free and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Corrosion-resistant finish and readily solderable terminal leads.
  • High ESD ratings (Machine Model = C, Human Body Model = 3B).

Applications

The MBRD660CTT4G is designed for use in various high-performance applications, including:

  • Switching power supplies.
  • Inverters.
  • Free-wheeling diodes.
  • Automotive systems (with NRVBD and SBRV prefixes).
  • Other applications requiring high efficiency and reliability.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRD660CTT4G?
    The peak repetitive reverse voltage (VRRM) is 60 volts.
  2. What is the average rectified forward current at TC = 130°C?
    The average rectified forward current (IF(AV)) is 6 amps.
  3. What is the maximum instantaneous forward voltage at iF = 6 amps and TC = 25°C?
    The maximum instantaneous forward voltage (VF) is 0.9 volts.
  4. What are the operating and storage temperature ranges for this device?
    The operating and storage temperature ranges are -65 to +175°C.
  5. Is the MBRD660CTT4G Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  6. What are the ESD ratings for this device?
    The ESD ratings are Machine Model = C and Human Body Model = 3B.
  7. What is the maximum thermal resistance, junction-to-case (RθJC), for this device?
    The maximum thermal resistance, junction-to-case (RθJC), is 6°C/W.
  8. What is the maximum thermal resistance, junction-to-ambient (RθJA), for this device when surface mounted on the minimum pad size recommended?
    The maximum thermal resistance, junction-to-ambient (RθJA), is 80°C/W.
  9. What are some typical applications for the MBRD660CTT4G?
    Typical applications include switching power supplies, inverters, free-wheeling diodes, and automotive systems.
  10. Is the MBRD660CTT4G AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified and PPAP capable for automotive and other specific applications.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io) (per Diode):3A
Voltage - Forward (Vf) (Max) @ If:700 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 60 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

-
140

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MBRD660CTT4H MBRD640CTT4H MBRD660CTT4 MBRD660CTT4G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 40 V 60 V 60 V
Current - Average Rectified (Io) (per Diode) 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 100 µA @ 60 V 100 µA @ 40 V 100 µA @ 60 V 100 µA @ 60 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK DPAK

Related Product By Categories

BAV199,215
BAV199,215
Nexperia USA Inc.
DIODE ARRAY GP 75V 160MA SOT23
BAS56,215
BAS56,215
Nexperia USA Inc.
DIODE ARRAY GP 60V 200MA SOT143B
BAS40-05
BAS40-05
Diotec Semiconductor
SCHOTTKY SOT-23 40V 0.2A
BAS40-05WH6327
BAS40-05WH6327
Infineon Technologies
SCHOTTKY DIODE
STPS30120CT
STPS30120CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 120V TO220
BAV23A,215
BAV23A,215
Nexperia USA Inc.
DIODE ARRAY GP 200V 225MA SOT23
BAV99BRW-7-F
BAV99BRW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
MBRB2060CT-E3/81
MBRB2060CT-E3/81
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V TO263AB
STTH3002CG
STTH3002CG
STMicroelectronics
DIODE ARRAY GP 200V 15A D2PAK
BAT54CQ-13
BAT54CQ-13
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 10K
BAS28 TR TIN/LEAD
BAS28 TR TIN/LEAD
Central Semiconductor Corp
DIODE SW 75V 250MA SOT143
BAV99W/DG/B4X
BAV99W/DG/B4X
Nexperia USA Inc.
DIODE SWITCHING TO-236AB

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3