Overview
The KSP2222ATA is an NPN general-purpose amplifier transistor produced by onsemi. This transistor is part of the KSP2222A series and is available in the TO-92 package. It is designed for a wide range of applications requiring a reliable and versatile transistor. The KSP2222ATA is Pb-free, making it compliant with current environmental regulations.
Key Specifications
| Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Base Breakdown Voltage (BVCBO) | IC = 10 μA, IE = 0 | - | 75 | V |
| Collector-Emitter Breakdown Voltage (BVCEO) | IC = 10 mA, IB = 0 | - | 40 | V |
| Emitter-Base Breakdown Voltage (BVEBO) | IE = 10 μA, IC = 0 | - | 6.0 | V |
| Collector Current (IC) | - | - | 600 | mA |
| Junction Temperature (TJ) | - | - | 150 | °C |
| Storage Temperature (TSTG) | - | -55 | 150 | °C |
| Power Dissipation by RθJA (PD) | - | - | 625 | mW |
| Thermal Resistance, Junction-to-Case (RθJC) | - | - | 83.3 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | - | - | 200 | °C/W |
| DC Current Gain (hFE) | VCE = 10 V, IC = 0.1 mA | 35 | - | - |
| DC Current Gain (hFE) | VCE = 10 V, IC = 1 mA | 50 | - | - |
| DC Current Gain (hFE) | VCE = 10 V, IC = 10 mA | 75 | - | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | IC = 150 mA, IB = 15 mA | - | 0.3 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | IC = 150 mA, IB = 15 mA | 0.6 | 1.2 | V |
| Current Gain Bandwidth Product (fT) | IC = 20 mA, VCE = 20 V, f = 100 MHz | - | 300 | MHz |
| Output Capacitance (Cob) | VCB = 10 V, IE = 0, f = 1.0 MHz | - | 8 | pF |
| Turn-On Time (tON) | VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V | - | 35 | ns |
| Turn-Off Time (tOFF) | VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA | - | 285 | ns |
| Noise Figure (NF) | IC = 100 μA, VCE = 10 V, RS = 1 kΩ, f = 1.0 kHz | - | 4 | dB |
Key Features
- Collector-Emitter Voltage: Up to 40 V, making it suitable for a variety of applications.
- Pb-Free: Compliant with current environmental regulations.
- High DC Current Gain: hFE ranges from 35 to 300 depending on the collector current.
- Low Saturation Voltage: VCE(sat) as low as 0.3 V for efficient operation.
- High Current Gain Bandwidth Product: fT of 300 MHz, suitable for high-frequency applications.
- Compact TO-92 Package: Available in bulk, ammo, and tape and reel configurations.
Applications
- General-Purpose Amplification: Suitable for amplifying signals in various electronic circuits.
- Switching Circuits: Can be used as a switch due to its high current gain and low saturation voltage.
- Audio Amplifiers: Used in audio circuits for amplifying audio signals.
- Power Supplies: Can be used in power supply circuits for voltage regulation and amplification.
- Automotive Electronics: Suitable for use in automotive systems due to its robust specifications.
Q & A
- What is the maximum collector-emitter voltage for the KSP2222ATA?
The maximum collector-emitter voltage (VCEO) is 40 V.
- What is the maximum collector current for the KSP2222ATA?
The maximum collector current (IC) is 600 mA.
- What is the junction temperature range for the KSP2222ATA?
The junction temperature (TJ) range is up to 150°C.
- Is the KSP2222ATA Pb-free?
Yes, the KSP2222ATA is Pb-free, making it environmentally compliant.
- What is the typical DC current gain (hFE) for the KSP2222ATA?
The typical DC current gain (hFE) ranges from 35 to 300 depending on the collector current.
- What is the collector-emitter saturation voltage (VCE(sat)) for the KSP2222ATA?
The collector-emitter saturation voltage (VCE(sat)) is as low as 0.3 V.
- What is the current gain bandwidth product (fT) for the KSP2222ATA?
The current gain bandwidth product (fT) is 300 MHz.
- In what package is the KSP2222ATA available?
The KSP2222ATA is available in the TO-92 package.
- What are the typical applications for the KSP2222ATA?
Typical applications include general-purpose amplification, switching circuits, audio amplifiers, power supplies, and automotive electronics.
- Is the KSP2222ATA suitable for high-frequency applications?
Yes, with a current gain bandwidth product (fT) of 300 MHz, it is suitable for high-frequency applications.
