FFH75H60S
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onsemi FFH75H60S

Manufacturer No:
FFH75H60S
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE GEN PURP 600V 75A TO247-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFH75H60S is a hyperfast diode produced by ON Semiconductor, characterized by its soft recovery characteristics. This diode combines the half recovery time of ultrafast diodes, making it highly efficient in reducing ringing and electrical noise in power switching circuits. It is constructed using silicon nitride passivated ion-implanted epitaxial planar technology, ensuring high reliability and performance.

Key Specifications

Parameter Symbol Ratings Unit
Peak Repetitive Reverse Voltage VRRM 600 V
Working Peak Reverse Voltage VRWM 600 V
DC Blocking Voltage VR 600 V
Average Rectified Forward Current (TC = 105°C) IF(AV) 75 A
Non-repetitive Peak Surge Current (60 Hz Single Half-Sine Wave) IFSM 750 A
Operating Junction and Storage Temperature TJ, TSTG −65 to 175 °C
Maximum Thermal Resistance, Junction to Case RJC 0.4 °C/W
Forward Voltage (IF = 75 A, TC = 25°C) VF 1.8 - 2.2 V
Reverse Recovery Time (trr) (IF = 75 A, dIF/dt = 200 A/μs, VR = 390 V, TC = 25°C) trr 40 - 75 ns

Key Features

  • Hyperfast recovery time (trr = 75 ns @ IF = 75 A)
  • Soft recovery characteristics, minimizing ringing and electrical noise
  • Low stored charge
  • Maximum forward voltage, VF = 1.8 V @ TC = 25°C
  • 600 V reverse voltage and high reliability
  • Avalanche energy rated
  • Pb-free and RoHS compliant

Applications

  • General purpose
  • Switching Mode Power Supplies (SMPS)
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Power switching circuits

Q & A

  1. What is the FFH75H60S diode?

    The FFH75H60S is a hyperfast diode with soft recovery characteristics, designed for use in various power switching applications.

  2. What are the key features of the FFH75H60S?

    Key features include hyperfast recovery time, soft recovery characteristics, low stored charge, and a maximum forward voltage of 1.8 V at 25°C.

  3. What is the maximum reverse voltage of the FFH75H60S?

    The maximum reverse voltage is 600 V.

  4. What is the average rectified forward current of the FFH75H60S at 105°C?

    The average rectified forward current is 75 A at 105°C.

  5. Is the FFH75H60S Pb-free and RoHS compliant?
  6. What are the typical applications of the FFH75H60S?

    Typical applications include SMPS, solar inverters, UPS, and general power switching circuits.

  7. What is the operating junction and storage temperature range of the FFH75H60S?

    The operating junction and storage temperature range is −65 to 175°C.

  8. What is the maximum thermal resistance, junction to case, of the FFH75H60S?

    The maximum thermal resistance, junction to case, is 0.4°C/W.

  9. How does the FFH75H60S reduce electrical noise in power switching circuits?

    The FFH75H60S reduces electrical noise through its soft recovery characteristics and low stored charge, minimizing ringing in power switching circuits.

  10. What is the reverse recovery time of the FFH75H60S?

    The reverse recovery time (trr) is between 40 to 75 ns at IF = 75 A, dIF/dt = 200 A/μs, VR = 390 V, and TC = 25°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):75A
Voltage - Forward (Vf) (Max) @ If:2.2 V @ 75 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:100 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:-65°C ~ 175°C
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