FAD6263M1X
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onsemi FAD6263M1X

Manufacturer No:
FAD6263M1X
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC GATE DRIVER 600V 3A 16SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FAD6263M1X is a high-voltage half-bridge gate driver IC produced by onsemi. This device is designed to drive power MOSFETs or IGBTs in a half-bridge configuration, utilizing the bootstrap technique to ensure proper drive of the high-side power switch. It operates with a single input and features complementary high and low drive outputs. The FAD6263M1X is AEC-Q100 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Key Specifications

Parameter Symbol Min Typ Max Unit
High-Side Floating Supply Voltage VB -0.3 625 V
Low-Side and Logic-Fixed Supply Voltage VDD -0.3 25 V
Logic Input Voltage (IN, SD, SR) VIN -0.3 VDD + 0.3 V
Output Source / Sink Current Capability IO+ 2 3.3 A
Turn-On Propagation Delay tON 155 230 ns
Turn-Off Propagation Delay tOFF 55 90 ns
Dead-Time: LO Turn-Off to HO Turn-On DT 85 120 160 ns
Power Dissipation PD 0.86 W
Thermal Resistance, Junction-to-Ambient θJA 145 °C/W

Key Features

  • Complementary High and Low Drive Outputs
  • Shoot-Through Protection with adjustable Dead-Time
  • High Voltage Range: Up to 600 V
  • DV/dt Immunity ±50 V/ns
  • Matched Propagation Delay 100 ns
  • Gate Drive Supply Range from 10 V to 22 V
  • Output Source / Sink Current Capability 3 A / 3 A
  • 3.3 V and 5 V Input Logic Pins
  • Extended Allowable Negative Bridge Pin Voltage Swing to −10 V for Signal Propagation
  • Under Voltage LockOut (UVLO) for Both Channels
  • Shutdown Pin with Latched Fault State
  • AEC-Q100 Qualified and PPAP Capable
  • Pb-Free, Halogen Free, and RoHS Compliant

Applications

  • Automotive
  • Motor Control (fans, pumps, compressors)
  • MOSFET and IGBT driver applications

Q & A

  1. What is the maximum high-side floating supply voltage of the FAD6263M1X?

    The maximum high-side floating supply voltage is 625 V.

  2. What is the range of the gate drive supply voltage for the FAD6263M1X?

    The gate drive supply range is from 10 V to 22 V.

  3. What is the output source/sink current capability of the FAD6263M1X?

    The output source/sink current capability is 3 A / 3 A.

  4. Does the FAD6263M1X have under-voltage lockout (UVLO) protection?
  5. How is the dead-time adjusted in the FAD6263M1X?

    The dead-time can be adjusted with an external resistor connected to the DT pin.

  6. What is the thermal resistance, junction-to-ambient, of the FAD6263M1X?

    The thermal resistance, junction-to-ambient, is 145 °C/W.

  7. Is the FAD6263M1X AEC-Q100 qualified and PPAP capable?
  8. What are the typical applications of the FAD6263M1X?

    The FAD6263M1X is typically used in automotive, motor control, and MOSFET/IGBT driver applications.

  9. Does the FAD6263M1X have shoot-through protection?
  10. What is the power dissipation limit of the FAD6263M1X?

    The power dissipation limit is 0.86 W.

Product Attributes

Output Configuration:Half Bridge (2)
Applications:DC Motors, General Purpose
Interface:Logic
Load Type:Capacitive and Resistive
Technology:Power MOSFET
Rds On (Typ):- 
Current - Output / Channel:3A
Current - Peak Output:3.3A
Voltage - Supply:10V ~ 22V
Voltage - Load:10V ~ 22V
Operating Temperature:-40°C ~ 150°C (TJ)
Features:Bootstrap Circuit
Fault Protection:Shoot-Through, UVLO
Mounting Type:Surface Mount
Package / Case:16-SOIC (0.154", 3.90mm Width)
Supplier Device Package:16-SOIC
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