DAP222M3T5G
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onsemi DAP222M3T5G

Manufacturer No:
DAP222M3T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 80V 100MA SOT723
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The DAP222M3T5G is a Common Anode Silicon Dual Switching Diode produced by onsemi. This component is designed for ultra-high speed switching applications, making it suitable for various electronic circuits that require fast and reliable switching performance. The diode is housed in the SOT-23 package, which is compact and convenient for modern electronic designs.

Key Specifications

ParameterSymbolMax. Unit
Peak Reverse VoltageV_RRM80 V
Max Surge CurrentI_SURGE2 A
Forward CurrentI_F100 mA
Power DissipationP_D260 mW
Junction TemperatureT_J150 °C
Storage TemperatureT_stg-55 ~ +150 °C
ConfigurationDual, Common Anode

Key Features

  • Ultra-high speed switching capability, making it ideal for high-frequency applications.
  • Compact SOT-23 package for space-efficient designs.
  • Common Anode configuration, suitable for various switching circuits.
  • High peak reverse voltage and surge current ratings for reliability in demanding environments.

Applications

The DAP222M3T5G is designed for use in a variety of high-speed switching applications, including:

  • High-frequency signal processing and switching circuits.
  • Communication systems requiring fast switching times.
  • Automotive and industrial control systems where reliability and speed are crucial.
  • General-purpose switching in electronic devices.

Q & A

  1. What is the peak reverse voltage of the DAP222M3T5G?
    The peak reverse voltage is 80 V.
  2. What is the maximum forward current of the DAP222M3T5G?
    The maximum forward current is 100 mA.
  3. What is the configuration of the DAP222M3T5G?
    The configuration is Dual, Common Anode.
  4. What is the junction temperature rating of the DAP222M3T5G?
    The junction temperature rating is 150 °C.
  5. What is the storage temperature range for the DAP222M3T5G?
    The storage temperature range is -55 ~ +150 °C.
  6. What package type is the DAP222M3T5G housed in?
    The DAP222M3T5G is housed in the SOT-23 package.
  7. What are the typical applications of the DAP222M3T5G?
    The DAP222M3T5G is typically used in high-frequency signal processing, communication systems, automotive and industrial control systems, and general-purpose switching.
  8. What is the maximum power dissipation of the DAP222M3T5G?
    The maximum power dissipation is 260 mW.
  9. What is the maximum surge current rating of the DAP222M3T5G?
    The maximum surge current rating is 2 A.
  10. Why is the DAP222M3T5G suitable for high-speed switching applications?
    The DAP222M3T5G is suitable due to its ultra-high speed switching capability and reliability in high-frequency environments.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):100mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:100 nA @ 70 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:SOT-723
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Similar Products

Part Number DAP222M3T5G DAN222M3T5G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Configuration 1 Pair Common Anode 1 Pair Common Cathode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) (per Diode) 100mA (DC) 100mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA 1.2 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 100 nA @ 70 V 100 nA @ 70 V
Operating Temperature - Junction 150°C (Max) 150°C (Max)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-723 SOT-723
Supplier Device Package SOT-723 SOT-723

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