BYW29-200G
  • Share:

onsemi BYW29-200G

Manufacturer No:
BYW29-200G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 200V 8A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYW29-200G is an UltraFast rectifier diode manufactured by onsemi. This device is designed for high-performance applications, particularly in switching power supplies, inverters, and as free-wheeling diodes. It is known for its ability to efficiently convert AC power into DC power, making it a crucial component in various power management systems.

Key Specifications

ParameterValue
Voltage Rating (V)200V
Load Current (A)8 A
Package / CaseTO-220AC-2
Pins2
Temperature Range-65°C to +175°C
TechnologyUltrafast Switching
Height9.27 mm
Length10.29 mm

Key Features

  • Ultrafast switching technology for high-efficiency power conversion.
  • High voltage rating of 200V, suitable for demanding power supply applications.
  • High load current capability of up to 8 A.
  • Wide operating temperature range from -65°C to +175°C.
  • TO-220AC-2 package for easy mounting and heat dissipation.

Applications

  • Switching power supplies: Ideal for use in SMPS due to its ultrafast switching capabilities.
  • Inverters: Suitable for inverter applications requiring high efficiency and reliability.
  • Free-wheeling diodes: Used in various power management circuits to prevent backflow of current.
  • General-purpose rectification: Can be used in a variety of DC power conversion applications.

Q & A

  1. What is the voltage rating of the BYW29-200G diode? The voltage rating of the BYW29-200G diode is 200V.
  2. What is the maximum load current of the BYW29-200G? The maximum load current is 8 A.
  3. What is the package type of the BYW29-200G? The package type is TO-220AC-2.
  4. What is the temperature range of the BYW29-200G? The temperature range is from -65°C to +175°C.
  5. What technology does the BYW29-200G use? The BYW29-200G uses ultrafast switching technology.
  6. What are some common applications of the BYW29-200G? Common applications include switching power supplies, inverters, and free-wheeling diodes.
  7. Is the BYW29-200G suitable for high-power applications? Yes, it is suitable for high-power applications due to its high voltage and current ratings.
  8. What is the height and length of the BYW29-200G package? The height is 9.27 mm and the length is 10.29 mm.
  9. Is the BYW29-200G RoHS compliant? Yes, the BYW29-200G is RoHS compliant.
  10. Where can I find more detailed specifications for the BYW29-200G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and LCSC.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$1.03
528

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYW29-200G BYW29-200H BYW29-200
Manufacturer onsemi onsemi STMicroelectronics
Product Status Active Obsolete Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 20 A 1.3 V @ 20 A 1.15 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 200 V 10 µA @ 200 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2 TO-220-2 TO-220AC
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C 150°C (Max)

Related Product By Categories

MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
NTMFS015N15MC
NTMFS015N15MC
onsemi
MOSFET N-CH 150V 9.2A/61A 8PQFN
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN