BYW29-200G
  • Share:

onsemi BYW29-200G

Manufacturer No:
BYW29-200G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 200V 8A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYW29-200G is an UltraFast rectifier diode manufactured by onsemi. This device is designed for high-performance applications, particularly in switching power supplies, inverters, and as free-wheeling diodes. It is known for its ability to efficiently convert AC power into DC power, making it a crucial component in various power management systems.

Key Specifications

ParameterValue
Voltage Rating (V)200V
Load Current (A)8 A
Package / CaseTO-220AC-2
Pins2
Temperature Range-65°C to +175°C
TechnologyUltrafast Switching
Height9.27 mm
Length10.29 mm

Key Features

  • Ultrafast switching technology for high-efficiency power conversion.
  • High voltage rating of 200V, suitable for demanding power supply applications.
  • High load current capability of up to 8 A.
  • Wide operating temperature range from -65°C to +175°C.
  • TO-220AC-2 package for easy mounting and heat dissipation.

Applications

  • Switching power supplies: Ideal for use in SMPS due to its ultrafast switching capabilities.
  • Inverters: Suitable for inverter applications requiring high efficiency and reliability.
  • Free-wheeling diodes: Used in various power management circuits to prevent backflow of current.
  • General-purpose rectification: Can be used in a variety of DC power conversion applications.

Q & A

  1. What is the voltage rating of the BYW29-200G diode? The voltage rating of the BYW29-200G diode is 200V.
  2. What is the maximum load current of the BYW29-200G? The maximum load current is 8 A.
  3. What is the package type of the BYW29-200G? The package type is TO-220AC-2.
  4. What is the temperature range of the BYW29-200G? The temperature range is from -65°C to +175°C.
  5. What technology does the BYW29-200G use? The BYW29-200G uses ultrafast switching technology.
  6. What are some common applications of the BYW29-200G? Common applications include switching power supplies, inverters, and free-wheeling diodes.
  7. Is the BYW29-200G suitable for high-power applications? Yes, it is suitable for high-power applications due to its high voltage and current ratings.
  8. What is the height and length of the BYW29-200G package? The height is 9.27 mm and the length is 10.29 mm.
  9. Is the BYW29-200G RoHS compliant? Yes, the BYW29-200G is RoHS compliant.
  10. Where can I find more detailed specifications for the BYW29-200G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and LCSC.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$1.03
528

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYW29-200G BYW29-200H BYW29-200
Manufacturer onsemi onsemi STMicroelectronics
Product Status Active Obsolete Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 20 A 1.3 V @ 20 A 1.15 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 200 V 10 µA @ 200 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2 TO-220-2 TO-220AC
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C 150°C (Max)

Related Product By Categories

BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK

Related Product By Brand

NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP