BYV32-200G
  • Share:

onsemi BYV32-200G

Manufacturer No:
BYV32-200G
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE ARRAY GP 200V 8A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV32-200G is a high-efficiency, fast recovery diode array produced by onsemi. This component is designed for high-performance switching applications, offering fast switching performance with soft recovery characteristics. It is packaged in a compact TO-220-3 through-hole configuration, ensuring thermal efficiency and reliability. The BYV32-200G is suitable for a wide range of power management and switching circuits due to its robust specifications and features.

Key Specifications

ParameterValue
Voltage Rating (V)200V
Current Rating (I)8A
Maximum Surge Current (Ifsm)100A
Maximum Forward Voltage Drop (Vf)1.01V @ 20A
Reverse Leakage Current (Ir)0.37μA
Operating Junction Temperature (TJ)-65 to +175°C
Storage Temperature (Tstg)-65 to +175°C
Package TypeTO-220-3
Configuration1 pair of common cathodes

Key Features

  • Fast switching performance with soft recovery characteristics.
  • High efficiency and low forward voltage drop (Vf) of 1.01V at 20A.
  • Low reverse leakage current of 0.37μA.
  • Compact TO-220-3 through-hole package for thermal efficiency.
  • Maximum surge current capability of up to 100A.
  • Operating junction temperature range of -65 to +175°C.
  • RoHS compliant.

Applications

The BYV32-200G is suitable for various high-performance switching and power management applications, including:

  • Switch-mode power supplies.
  • DC-DC converters.
  • Motor control circuits.
  • Power factor correction (PFC) circuits.
  • High-frequency switching circuits.

Q & A

  1. What is the voltage rating of the BYV32-200G diode?
    The BYV32-200G has a voltage rating of 200V.
  2. What is the current rating of the BYV32-200G diode?
    The BYV32-200G has a current rating of 8A.
  3. What is the maximum surge current capability of the BYV32-200G?
    The maximum surge current capability is up to 100A.
  4. What is the forward voltage drop (Vf) of the BYV32-200G at 20A?
    The forward voltage drop (Vf) is 1.01V at 20A.
  5. What is the reverse leakage current of the BYV32-200G?
    The reverse leakage current is 0.37μA.
  6. What is the operating junction temperature range of the BYV32-200G?
    The operating junction temperature range is -65 to +175°C.
  7. What package type does the BYV32-200G use?
    The BYV32-200G is packaged in a TO-220-3 through-hole configuration.
  8. Is the BYV32-200G RoHS compliant?
    Yes, the BYV32-200G is RoHS compliant.
  9. What are some typical applications for the BYV32-200G?
    Typical applications include switch-mode power supplies, DC-DC converters, motor control circuits, power factor correction (PFC) circuits, and high-frequency switching circuits.
  10. What are the key features of the BYV32-200G?
    The key features include fast switching performance, high efficiency, low forward voltage drop, low reverse leakage current, and a compact TO-220-3 package.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):8A
Voltage - Forward (Vf) (Max) @ If:1.15 V @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:50 µA @ 200 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$1.74
326

Please send RFQ , we will respond immediately.

Same Series
BYV32-200
BYV32-200
DIODE ARRAY GP 200V 8A TO220AB

Similar Products

Part Number BYV32-200G BYV32-200
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) (per Diode) 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 20 A 1.15 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns
Current - Reverse Leakage @ Vr 50 µA @ 200 V 50 µA @ 200 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220

Related Product By Categories

BAV70E6767
BAV70E6767
Infineon Technologies
GENERAL PURPOSE HIGH SPEED SWITC
BAV23A,215
BAV23A,215
Nexperia USA Inc.
DIODE ARRAY GP 200V 225MA SOT23
BAS40-05-E3-18
BAS40-05-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
STPS30L45CG-TR
STPS30L45CG-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 45V D2PAK
BAT54CQ-13
BAT54CQ-13
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 10K
RURD620CCS9A-F085
RURD620CCS9A-F085
onsemi
DIODE ARRAY GP 200V 6A DPAK
1PS76SB21
1PS76SB21
Nexperia USA Inc.
NOW NEXPERIA 1PS76SB21 - RECTIFI
BAV74_D87Z
BAV74_D87Z
onsemi
DIODE ARRAY GP 50V 200MA SOT23-3
MMBD1204_D87Z
MMBD1204_D87Z
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAV 99W H6433
BAV 99W H6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAW56W/ZLF
BAW56W/ZLF
Nexperia USA Inc.
DIODE ARRAY GEN PURP 90V SOT323
BAV99/DG/B4VL
BAV99/DG/B4VL
Nexperia USA Inc.
DIODE SWITCHING TO-236AB

Related Product By Brand

MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT