BCW32LT1G
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onsemi BCW32LT1G

Manufacturer No:
BCW32LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 32V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCW32LT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. This transistor is designed for a wide range of applications, including automotive and other environments requiring unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with stringent automotive standards. The BCW32LT1G is also Pb-free, halogen-free, and RoHS compliant, making it an environmentally friendly choice.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO32Vdc
Collector-Base VoltageVCBO32Vdc
Emitter-Base VoltageVEBO5.0Vdc
Continuous Collector CurrentIC100mAdc
DC Current Gain (hFE)hFE200 - 450
Power DissipationPD0.225 W (FR-5 Board, TA = 25°C)
Transistor Case StyleSOT-23
No. of Pins3

Key Features

  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
  • Pb-free, halogen-free, and RoHS compliant.
  • High DC current gain (hFE) of 200 to 450.
  • Maximum collector-emitter voltage of 32 Vdc.
  • Continuous collector current of 100 mA.
  • Low power dissipation of 0.225 W on an FR-5 board at 25°C.
  • SOT-23 package for compact design.

Applications

The BCW32LT1G is suitable for a variety of applications, including:

  • Automotive systems requiring high reliability and compliance with automotive standards.
  • General-purpose switching and amplification circuits.
  • Consumer electronics where environmental compliance is necessary.
  • Industrial control systems and automation.

Q & A

  1. What is the maximum collector-emitter voltage of the BCW32LT1G transistor?
    The maximum collector-emitter voltage (VCEO) is 32 Vdc.
  2. What is the continuous collector current rating of the BCW32LT1G?
    The continuous collector current (IC) is 100 mA.
  3. Is the BCW32LT1G transistor RoHS compliant?
    Yes, the BCW32LT1G is RoHS compliant, Pb-free, and halogen-free.
  4. What is the DC current gain (hFE) of the BCW32LT1G transistor?
    The DC current gain (hFE) ranges from 200 to 450.
  5. What package type does the BCW32LT1G transistor use?
    The BCW32LT1G uses a SOT-23 package.
  6. Is the BCW32LT1G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
  7. What is the power dissipation of the BCW32LT1G on an FR-5 board at 25°C?
    The power dissipation (PD) is 0.225 W on an FR-5 board at 25°C.
  8. How many pins does the BCW32LT1G transistor have?
    The BCW32LT1G has 3 pins.
  9. What are some typical applications of the BCW32LT1G transistor?
    It is used in automotive systems, general-purpose switching and amplification circuits, consumer electronics, and industrial control systems.
  10. Is the BCW32LT1G transistor environmentally friendly?
    Yes, it is Pb-free, halogen-free, and RoHS compliant, making it an environmentally friendly choice.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):32 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:225 mW
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
NSVBCW32LT1G
NSVBCW32LT1G
TRANS NPN 32V 0.1A SOT23-3

Similar Products

Part Number BCW32LT1G BCW33LT1G BCW30LT1G BCW32LT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type NPN NPN PNP -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 32 V 32 V 32 V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA 250mV @ 500µA, 10mA 300mV @ 500µA, 10mA -
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V 215 @ 2mA, 5V -
Power - Max 225 mW 300 mW 300 mW -
Frequency - Transition - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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