Overview
The 2SA2210-1E is a high-performance PNP bipolar transistor manufactured by onsemi. This device is designed for high-current and high-voltage applications, making it suitable for a variety of industrial and automotive uses. The transistor features a TO-220F-3SG package, which is lead-free and compliant with current environmental standards.
Key Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-to-Base Voltage | VCBO | - | - | -50 | V | |
| Collector-to-Emitter Voltage | VCEO | - | - | -50 | V | |
| Emitter-to-Base Voltage | VEBO | - | - | -6 | V | |
| Collector Current | IC | - | - | -20 | A | |
| Collector Current (Pulse) | ICP | - | - | -25 | A | |
| Base Current | IB | - | - | -3 | A | |
| Collector Dissipation | PC | Tc=25°C | - | 2 | W | |
| Junction Temperature | Tj | - | - | 150 | °C | |
| Storage Temperature | Tstg | - | -55 to +150 | °C | ||
| DC Current Gain | hFE | VCE=-2V, IC=-1A | 150 | - | 450 | - |
| Gain-Bandwidth Product | fT | VCE=-10V, IC=-1A | - | 140 | - | MHz |
| Collector-to-Emitter Saturation Voltage | VCE(sat) | IC=-7A, IB=-350mA | - | -200 | -500 | mV |
| Base-to-Emitter Saturation Voltage | VBE(sat) | IC=-7A, IB=-350mA | - | -1.2 | - | V |
Key Features
- Adoption of MBIT Process: Enhances the transistor's performance and reliability.
- Low Collector-to-Emitter Saturation Voltage: Reduces power losses and improves efficiency.
- Large Current Capacitance: Supports high-current applications.
- High-Speed Switching: Suitable for applications requiring fast switching times.
- Pb-Free Device: Compliant with environmental regulations.
Applications
- Relay Drivers: Used in relay control circuits due to its high current and voltage handling capabilities.
- Lamp Drivers: Suitable for driving lamps in various applications.
- Motor Drivers: Used in motor control circuits requiring high current and low saturation voltage.
Q & A
- What is the maximum collector current of the 2SA2210-1E transistor?
The maximum collector current is -20 A.
- What is the maximum collector-to-emitter voltage of the 2SA2210-1E transistor?
The maximum collector-to-emitter voltage is -50 V.
- What is the package type of the 2SA2210-1E transistor?
The package type is TO-220F-3SG.
- What is the minimum DC current gain of the 2SA2210-1E transistor?
The minimum DC current gain is 150.
- What are the typical applications of the 2SA2210-1E transistor?
Typical applications include relay drivers, lamp drivers, and motor drivers.
- What is the collector-to-emitter saturation voltage of the 2SA2210-1E transistor?
The collector-to-emitter saturation voltage is typically -200 mV to -500 mV.
- Is the 2SA2210-1E transistor Pb-free?
Yes, the 2SA2210-1E transistor is Pb-free.
- What is the maximum junction temperature of the 2SA2210-1E transistor?
The maximum junction temperature is 150°C.
- What is the storage temperature range for the 2SA2210-1E transistor?
The storage temperature range is -55°C to +150°C.
- What is the gain-bandwidth product of the 2SA2210-1E transistor?
The gain-bandwidth product is typically 140 MHz.
