Overview
The 2N5061G is a sensitive gate silicon controlled rectifier (SCR) produced by onsemi. It is part of the 2N5060 series, which includes reverse blocking thyristors designed for high-volume consumer applications. These devices are annular PNPN structures, making them suitable for a variety of uses such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. The 2N5061G is packaged in an inexpensive plastic TO-92 package, which is adaptable for automatic insertion equipment, and is lead-free, enhancing reliability and environmental compliance.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Peak Repetitive Off-State Voltage | VDRM, VRRM | 60 | V |
On-State Current RMS (180° Conduction Angles; TC = 80°C) | IT(RMS) | 0.8 | A |
Average On-State Current (180° Conduction Angles; TC = 67°C) | IT(AV) | 0.51 | A |
Average On-State Current (180° Conduction Angles; TC = 102°C) | IT(AV) | 0.255 | A |
Peak Non-repetitive Surge Current, TA = 25°C (1/2 cycle, Sine Wave, 60 Hz) | ITSM | 10 | A |
Forward Peak Gate Power (Pulse Width ≤ 1.0 μsec; TA = 25°C) | PGM | 0.1 | W |
Forward Average Gate Power (TA = 25°C, t = 8.3 ms) | PG(AV) | 0.01 | W |
Forward Peak Gate Current (Pulse Width ≤ 1.0 μsec; TA = 25°C) | IGM | 1.0 | A |
Reverse Peak Gate Voltage (Pulse Width ≤ 1.0 μsec; TA = 25°C) | VRGM | 5.0 | V |
Operating Junction Temperature Range | TJ | -40 to +110 | °C |
Storage Temperature Range | Tstg | -40 to +150 | °C |
Thermal Resistance, Junction-to-Case | RJC | 75 | °C/W |
Thermal Resistance, Junction-to-Ambient | RJA | 200 | °C/W |
Key Features
- Sensitive Gate Trigger Current: Maximum of 200 μA
- Low Reverse and Forward Blocking Current: Maximum of 50 μA at TC = 110°C
- Low Holding Current: Maximum of 5 mA
- Passivated Surface for Reliability and Uniformity
- Pb-Free Devices for environmental compliance
- Inexpensive plastic TO-92 package, adaptable for automatic insertion equipment
Applications
- Relay and lamp drivers
- Small motor controls
- Gate drivers for larger thyristors
- Sensing and detection circuits
Q & A
- What is the peak repetitive off-state voltage for the 2N5061G?
The peak repetitive off-state voltage (VDRM, VRRM) for the 2N5061G is 60 V.
- What is the maximum on-state current RMS for the 2N5061G?
The on-state current RMS (180° conduction angles; TC = 80°C) is 0.8 A.
- What is the average on-state current at different temperatures?
The average on-state current is 0.51 A at TC = 67°C and 0.255 A at TC = 102°C.
- What is the peak non-repetitive surge current for the 2N5061G?
The peak non-repetitive surge current (TA = 25°C, 1/2 cycle, Sine Wave, 60 Hz) is 10 A.
- What is the forward peak gate power for the 2N5061G?
The forward peak gate power (pulse width ≤ 1.0 μsec; TA = 25°C) is 0.1 W.
- What is the operating junction temperature range for the 2N5061G?
The operating junction temperature range is -40 to +110°C.
- What is the thermal resistance, junction-to-case for the 2N5061G?
The thermal resistance, junction-to-case (RJC) is 75°C/W.
- What are the typical applications of the 2N5061G?
The 2N5061G is typically used in relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
- Is the 2N5061G a Pb-Free device?
Yes, the 2N5061G is a Pb-Free device, enhancing environmental compliance.
- What package type is the 2N5061G available in?
The 2N5061G is available in an inexpensive plastic TO-92 package.