PMEG45U10EPDAZ
  • Share:

NXP Semiconductors PMEG45U10EPDAZ

Manufacturer No:
PMEG45U10EPDAZ
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA PMEG45U10EPD - 45V, 10A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMEG45U10EPDAZ is a high-performance Schottky diode produced by Nexperia, formerly part of NXP Semiconductors. This component is designed to offer low forward voltage drop and high surge current capability, making it suitable for a variety of power management and rectification applications.

Key Specifications

ParameterValue
Vrrm - Repetitive Reverse Voltage45 V
Vf - Forward Voltage490 mV @ 10 A
Ifsm - Forward Surge Current180 A
Ir - Reverse Current600 uA
Current Rating10 A
Package TypeTO-277 (CFP15)

Key Features

  • Low forward voltage drop (Vf) of 490 mV at 10 A, reducing power losses.
  • High forward surge current (Ifsm) of 180 A, providing robustness against transient conditions.
  • Surface mount package (TO-277) for easy integration into modern PCB designs.
  • RoHS compliant, ensuring environmental sustainability.

Applications

  • Power supplies and DC-DC converters.
  • Rectifier circuits in high-frequency applications.
  • Switch-mode power supplies (SMPS).
  • Automotive and industrial power systems.

Q & A

  1. What is the repetitive reverse voltage of the PMEG45U10EPDAZ? The repetitive reverse voltage is 45 V.
  2. What is the forward voltage drop at 10 A? The forward voltage drop at 10 A is 490 mV.
  3. What is the maximum forward surge current? The maximum forward surge current is 180 A.
  4. What is the reverse current? The reverse current is 600 uA.
  5. What package type does the PMEG45U10EPDAZ use? The PMEG45U10EPDAZ uses the TO-277 (CFP15) package type.
  6. Is the PMEG45U10EPDAZ RoHS compliant? Yes, the PMEG45U10EPDAZ is RoHS compliant.
  7. What are some common applications for the PMEG45U10EPDAZ? Common applications include power supplies, DC-DC converters, rectifier circuits, and switch-mode power supplies.
  8. Who is the manufacturer of the PMEG45U10EPDAZ? The PMEG45U10EPDAZ is manufactured by Nexperia.
  9. What is the current rating of the PMEG45U10EPDAZ? The current rating is 10 A.
  10. Why is the PMEG45U10EPDAZ suitable for high-frequency applications? It is suitable due to its low forward voltage drop and high surge current capability.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):45 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:490 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):16 ns
Current - Reverse Leakage @ Vr:20 mA @ 10 V
Capacitance @ Vr, F:1170pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-277, 3-PowerDFN
Supplier Device Package:CFP15
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.25
1,927

Please send RFQ , we will respond immediately.

Same Series
PMEG45U10EPDZ
PMEG45U10EPDZ
DIODE SCHOTTKY 45V 10A CFP15

Similar Products

Part Number PMEG45U10EPDAZ PMEG45U10EPDZ PMEG45A10EPDAZ
Manufacturer NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 45 V 45 V 45 V
Current - Average Rectified (Io) 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 490 mV @ 10 A 490 mV @ 10 A 540 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 16 ns 34 ns 21 ns
Current - Reverse Leakage @ Vr 20 mA @ 10 V 600 µA @ 45 V 500 µA @ 45 V
Capacitance @ Vr, F 1170pF @ 1V, 1MHz 1170pF @ 1V, 1MHz 715pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN
Supplier Device Package CFP15 CFP15 CFP15
Operating Temperature - Junction -55°C ~ 150°C 150°C (Max) 150°C (Max)

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

PMEG3002AEL315
PMEG3002AEL315
NXP Semiconductors
NOW NEXPERIA PMEG3002AEL RECTIFI
2N7002PS/ZLX
2N7002PS/ZLX
NXP Semiconductors
NEXPERIA 2N7002PS - 60 V, 320 MA
MCIMX7D3DVK10SC
MCIMX7D3DVK10SC
NXP Semiconductors
I.MX 7DUAL:2X CORTEX A7, 2X USB
74LVTH125D,118
74LVTH125D,118
NXP Semiconductors
NEXPERIA 74LVTH125D - BUS DRIVER
74ABT244DB,118
74ABT244DB,118
NXP Semiconductors
NEXPERIA 74ABT244DB - BUS DRIVER
74AHC1G14GV,125
74AHC1G14GV,125
NXP Semiconductors
NEXPERIA 74AHC1G14GV - INVERTER,
74AHC02PW,118
74AHC02PW,118
NXP Semiconductors
NEXPERIA 74AHC02PW - NOR GATE, A
74HCT132D,652
74HCT132D,652
NXP Semiconductors
NEXPERIA 74HCT132D - NAND GATE,
74LVC04ADB,112
74LVC04ADB,112
NXP Semiconductors
NEXPERIA 74LVC04ADB - INVERTER,
74HC21DB,112
74HC21DB,112
NXP Semiconductors
NEXPERIA 74HC21DB - AND GATE, HC
74HC595DB,118
74HC595DB,118
NXP Semiconductors
NEXPERIA 74HC595DB - SERIAL IN P
CBT3125PW,112
CBT3125PW,112
NXP Semiconductors
NEXPERIA CBT3125 - QUADRUPLE FET