PMEG4010EH/DG/B2115
  • Share:

NXP USA Inc. PMEG4010EH/DG/B2115

Manufacturer No:
PMEG4010EH/DG/B2115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
RECTIFIER DIODE, SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMEG4010EH/DG/B2115 is a Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier manufactured by NXP USA Inc. This component is designed for high-efficiency applications and is encapsulated in a small Surface-Mounted Device (SMD) plastic package, specifically the SOD-123F package.

It features an integrated guard ring for stress protection, making it suitable for a variety of applications requiring low forward voltage drop and high efficiency.

Key Specifications

Parameter Conditions Min Typ Max Unit
Diode Type - - - Schottky -
Voltage - DC Reverse (Vr) (Max) - - - 40 V
Current - Average Rectified (Io) Tsp ≤ 55 °C - - 1 A
Voltage - Forward (Vf) (Max) @ If IF = 1000 mA - 540 640 mV
Reverse Recovery Time (trr) - - - < 500 ns, > 200 mA (Io) -
Current - Reverse Leakage @ Vr VR = 40 V - - 100 µA -
Capacitance @ Vr, F VR = 1 V; f = 1 MHz - - 50 pF -
Mounting Type - - - Surface Mount -
Package / Case - - - SOD-123F -
Operating Temperature - Junction - - - 150 °C -

Key Features

  • Very low forward voltage drop (Vf), typically 540 mV to 640 mV at 1 A.
  • High efficiency due to low forward voltage and fast recovery time (< 500 ns).
  • Integrated guard ring for stress protection, enhancing reliability.
  • Small SMD plastic package (SOD-123F), ideal for space-saving designs.
  • Low reverse leakage current (100 µA at 40 V).
  • Low diode capacitance (50 pF at 1 V, 1 MHz).

Applications

  • Low voltage rectification.
  • High efficiency DC-to-DC conversion.
  • Switch mode power supply.
  • Reverse polarity protection.
  • Low power consumption applications.

Q & A

  1. What is the maximum reverse voltage of the PMEG4010EH/DG/B2115?

    The maximum reverse voltage is 40 V.

  2. What is the typical forward voltage drop at 1 A?

    The typical forward voltage drop at 1 A is between 540 mV to 640 mV.

  3. What is the package type of the PMEG4010EH/DG/B2115?

    The package type is SOD-123F.

  4. What are the key applications of this component?

    Key applications include low voltage rectification, high efficiency DC-to-DC conversion, switch mode power supply, reverse polarity protection, and low power consumption applications).

  5. What is the maximum junction temperature of the PMEG4010EH/DG/B2115?

    The maximum junction temperature is 150 °C).

  6. What is the reverse recovery time of this diode?

    The reverse recovery time is less than 500 ns for currents greater than 200 mA).

  7. What is the typical reverse leakage current at 40 V?

    The typical reverse leakage current at 40 V is 100 µA).

  8. What is the diode capacitance at 1 V and 1 MHz?

    The diode capacitance at 1 V and 1 MHz is 50 pF).

  9. Is the PMEG4010EH/DG/B2115 suitable for surface mounting?

    Yes, it is designed for surface mounting).

  10. What is the maximum forward current rating of the PMEG4010EH/DG/B2115?

    The maximum forward current rating is 1 A).

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

$0.08
1,913

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL

Related Product By Brand

BF909A215
BF909A215
NXP USA Inc.
MOSFET N-CH SOT-143B
LPC5502JHI48QL
LPC5502JHI48QL
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48HVQFN
S9S12G48ACLF
S9S12G48ACLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
TJA1021T/20/C,118
TJA1021T/20/C,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
TJA1048T,118
TJA1048T,118
NXP USA Inc.
IC TRANSCEIVER HALF 2/2 14SO
TJA1042TK/3/1,118
TJA1042TK/3/1,118
NXP USA Inc.
HIGH-SPEED CAN TRANSCEIVER WITH
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
PCAL6416AER
PCAL6416AER
NXP USA Inc.
PARALLEL I/O PORT, 16 I/O, CMOS,
74HC245PW/AU118
74HC245PW/AU118
NXP USA Inc.
IC TXRX NON-INVERT 6V 20TSSOP
74LVC2G32DC-Q100125
74LVC2G32DC-Q100125
NXP USA Inc.
OR GATE, LVC/LCX/Z SERIES
MC56F82748VLH,557
MC56F82748VLH,557
NXP USA Inc.
DIGITAL SIGNAL CONTROLLER