PMBT4403/S911215
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NXP USA Inc. PMBT4403/S911215

Manufacturer No:
PMBT4403/S911215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBT4403/S911215 is a PNP switching transistor manufactured by NXP Semiconductors. This transistor is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of compact electronic designs. It is part of NXP's discrete semiconductor portfolio and is known for its high current handling and low voltage characteristics.

Key Specifications

Parameter Conditions Min. Max. Unit
Collector-Base Voltage (VCBO) Open Emitter - -40 V
Collector-Emitter Voltage (VCEO) Open Base - -40 V
Emitter-Base Voltage (VEBO) Open Collector - -5 V
Collector Current (IC) - -600 mA
Peak Collector Current (ICM) - -800 mA
Peak Base Current (IBM) - -200 mA
Total Power Dissipation (Ptot) Tamb ≤ 25 °C - 250 mW
Storage Temperature (Tstg) - -65 +150 °C
Junction Temperature (Tj) - -150 °C
Operating Ambient Temperature (Tamb) - -65 +150 °C
DC Current Gain (hFE) VCE = -1 V, IC = -0.1 mA 30 - -
DC Current Gain (hFE) VCE = -1 V, IC = -1 mA 60 - -
DC Current Gain (hFE) VCE = -1 V, IC = -10 mA 100 - -

Key Features

  • High current handling: Maximum collector current of 600 mA and peak collector current of 800 mA.
  • Low voltage operation: Maximum collector-emitter voltage of 40 V.
  • Compact SOT23 (TO-236AB) package, suitable for surface mount applications.
  • High DC current gain (hFE) ranging from 30 to 100 depending on the collector current.
  • Low power dissipation of 250 mW.
  • Wide operating temperature range from -65°C to +150°C.

Applications

The PMBT4403/S911215 is designed for various industrial and consumer switching applications. Its high current and low voltage characteristics make it suitable for use in:

  • Switching circuits in industrial control systems.
  • Consumer electronics such as audio equipment and home appliances.
  • Automotive systems where reliability and compactness are crucial.

Q & A

  1. What is the maximum collector current of the PMBT4403/S911215?

    The maximum collector current is 600 mA.

  2. What is the maximum collector-emitter voltage of the PMBT4403/S911215?

    The maximum collector-emitter voltage is 40 V.

  3. What package type is the PMBT4403/S911215 available in?

    The transistor is housed in a SOT23 (TO-236AB) package.

  4. What is the peak base current of the PMBT4403/S911215?

    The peak base current is 200 mA.

  5. What is the total power dissipation of the PMBT4403/S911215?

    The total power dissipation is 250 mW.

  6. What is the storage temperature range for the PMBT4403/S911215?

    The storage temperature range is from -65°C to +150°C.

  7. What are the typical applications of the PMBT4403/S911215?

    It is used in industrial and consumer switching applications, including automotive systems.

  8. What is the DC current gain (hFE) of the PMBT4403/S911215 at different collector currents?

    The DC current gain ranges from 30 to 100 depending on the collector current.

  9. Is the PMBT4403/S911215 RoHS compliant?
  10. What is the NPN complement of the PMBT4403/S911215?

    The NPN complement is the PMBT4401.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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