Overview
The PESD5V0V1BLD,315 is a very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode manufactured by NXP Semiconductors. This device is designed to protect one signal line from damage caused by ESD and other transients. It is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads, making it ideal for applications where space is limited and high reliability is required.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VRWM - Reverse Standoff Voltage | - | - | - | 5 | V |
| IRM - Reverse Leakage Current | VRWM = 5 V | - | - | 1 | nA |
| VBR - Breakdown Voltage | IR = 5 mA | 5.8 | 6.8 | 7.8 | V |
| Cd - Diode Capacitance | f = 1 MHz; VR = 0 V | - | 11 | 13 | pF |
| VCL - Clamping Voltage | IPP = 4.8 A | - | - | 12.5 | V |
| PPPM - Peak Pulse Power Dissipation | 8/20 μs waveform | - | - | 45 | W |
| IPP - Peak Pulse Current | 8/20 μs waveform | - | - | 4.8 | A |
| Operating Temperature | - | -55 | - | 150 | °C |
| Package / Case | - | - | - | DFN-1006-2 (SOD882D) | - |
Key Features
- Bidirectional ESD protection of one line
- Ultra small SMD plastic package (SOD882D)
- Solderable side pads
- Package height: typically 0.37 mm
- Very low diode capacitance: Cd = 11 pF
- Max. peak pulse power: PPPM = 45 W
- Low clamping voltage: VCL = 12.5 V
- Ultra low leakage current: IRM < 1 nA
- ESD protection up to 30 kV (IEC 61000-4-2 level 4)
- AEC-Q101 qualified for automotive applications
Applications
- Computers and peripherals
- Audio and video equipment
- Cellular handsets and accessories
- SIM card protection
- Communication systems
- Portable electronics
- 10/100 Mbit/s Ethernet
- FireWire
Q & A
- What is the primary function of the PESD5V0V1BLD,315?
The primary function of the PESD5V0V1BLD,315 is to provide bidirectional ESD protection for one signal line against damage caused by ESD and other transients.
- What is the package type of the PESD5V0V1BLD,315?
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package.
- What is the diode capacitance of the PESD5V0V1BLD,315?
The diode capacitance is 11 pF at 1 MHz.
- What is the maximum peak pulse power dissipation of the PESD5V0V1BLD,315?
The maximum peak pulse power dissipation is 45 W for an 8/20 μs waveform.
- What is the clamping voltage of the PESD5V0V1BLD,315?
The clamping voltage is 12.5 V at an IPP of 4.8 A.
- What is the reverse leakage current of the PESD5V0V1BLD,315?
The reverse leakage current is less than 1 nA.
- Is the PESD5V0V1BLD,315 suitable for automotive applications?
Yes, it is AEC-Q101 qualified for automotive applications.
- What are the recommended layout guidelines for using the PESD5V0V1BLD,315?
Place the device close to the input terminal or connector, minimize the path length between the device and the protected line, avoid parallel signal paths, and use ground planes whenever possible.
- What are some common applications of the PESD5V0V1BLD,315?
Common applications include computers and peripherals, audio and video equipment, cellular handsets, SIM card protection, communication systems, and portable electronics.
- What is the operating temperature range of the PESD5V0V1BLD,315?
The operating temperature range is from -55°C to 150°C.
