BYQ28E-200/H127
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NXP USA Inc. BYQ28E-200/H127

Manufacturer No:
BYQ28E-200/H127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
ULTRAFAST RECTIFIER DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28E-200/H127 is a dual ultrafast power diode produced by WeEn Semiconductors, originally part of NXP Semiconductors' product line. This component is designed for high-efficiency and fast recovery applications, making it suitable for various power management and rectification needs.

The diodes are packaged in a TO-220AB plastic single-ended package, which is heatsink mounted and features a 3-lead configuration. This design enhances thermal management and ease of installation.

Key Specifications

Parameter Conditions Min Typ Max Unit
VRRM (Repetitive Peak Reverse Voltage) - - - 200 V
VRWM (Crest Working Reverse Voltage) - - - 200 V
IFRM (Non-Repetitive Peak Forward Current) tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per diode - - 50 A
VF (Forward Voltage) IF = 5 A; Tj = 150 °C - 0.8 0.895 V
trr (Reverse Recovery Time) IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; ramp recovery - 15 25 ns
Qr (Recovered Charge) IF = 2 A; VR = 30 V; dIF/dt = 20 A/μs; Tj = 25 °C - 4 9 nC
Rth(j-mb) (Thermal Resistance from Junction to Mounting Base) with heatsink compound; both diodes conducting - - 3 K/W

Key Features

  • Ultrafast Recovery Time: The BYQ28E-200/H127 features a fast reverse recovery time of 15-25 ns, making it ideal for high-frequency applications.
  • High Efficiency: The diodes have a low forward voltage drop (VF) of 0.8-0.895 V at 5 A and 150 °C, enhancing overall efficiency.
  • Robust Thermal Management: The TO-220AB package with a heatsink mount and thermal resistance of 3 K/W ensures effective heat dissipation.
  • High Peak Forward Current: Capable of handling non-repetitive peak forward currents up to 50 A per diode.
  • Electrostatic Discharge Protection: The diodes are rated for electrostatic discharge (ESD) up to 8 kV (HBM).

Applications

  • Power Supplies: Suitable for use in switching power supplies, DC-DC converters, and other high-efficiency power management systems.
  • Rectification: Ideal for rectification in high-frequency and high-power applications.
  • Motor Control: Can be used in motor control circuits requiring fast switching and high efficiency.
  • Industrial Power Systems: Applicable in various industrial power systems where fast recovery and high efficiency are critical.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the BYQ28E-200/H127?

    The VRRM is 200 V.

  2. What is the typical forward voltage drop (VF) at 5 A and 150 °C?

    The typical VF is 0.8 V.

  3. What is the reverse recovery time (trr) of the diode?

    The trr is between 15-25 ns.

  4. What is the thermal resistance from junction to mounting base (Rth(j-mb))?

    The Rth(j-mb) is 3 K/W with heatsink compound.

  5. What is the maximum non-repetitive peak forward current (IFRM) per diode?

    The maximum IFRM is 50 A per diode.

  6. What is the electrostatic discharge (ESD) rating of the diode?

    The ESD rating is up to 8 kV (HBM).

  7. In what package is the BYQ28E-200/H127 available?

    The diode is available in a TO-220AB plastic single-ended package.

  8. What are some common applications of the BYQ28E-200/H127?

    Common applications include power supplies, rectification, motor control, and industrial power systems.

  9. Who is the manufacturer of the BYQ28E-200/H127?

    The manufacturer is WeEn Semiconductors, originally part of NXP Semiconductors.

  10. What is the recovered charge (Qr) of the diode?

    The Qr is between 4-9 nC.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
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