Overview
The BUK762R6-40E118 is a high-performance N-channel TrenchMOS standard level Field-Effect Transistor (FET) produced by NXP USA Inc., now known as Nexperia. This MOSFET is part of the TrenchMOS family, known for its high efficiency and reliability. Although the specific model BUK762R6-40E118 is listed as obsolete, it remains relevant for understanding the capabilities and specifications of similar TrenchMOS devices.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 40 | V |
| ID (Continuous Drain Current) | 120 | A |
| RDS(on) (On-State Drain-Source Resistance) | Typically 1.6 mΩ | mΩ |
| Ptot (Total Power Dissipation) | 293 | W |
| Package | D2PAK (TO-263) | - |
Key Features
- High Efficiency: The TrenchMOS technology ensures low on-state resistance and high switching speeds, making it suitable for high-efficiency applications.
- Reliability: Designed with robustness in mind, this MOSFET offers high reliability and durability in various operating conditions.
- Low Thermal Resistance: The D2PAK package provides good thermal dissipation, helping to maintain the device's performance under high current and high temperature conditions.
- Automotive Grade: Suitable for automotive and industrial applications where high current handling and reliability are crucial.
Applications
- Automotive Systems: Used in various automotive applications such as power steering, fuel pumps, and other high-current systems.
- Industrial Power Supplies: Suitable for high-power industrial applications, including DC-DC converters and motor control systems.
- Power Management: Ideal for power management in servers, data centers, and other high-power electronic systems.
Q & A
- What is the maximum drain-source voltage of the BUK762R6-40E118?
The maximum drain-source voltage (VDS) is 40 V.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current (ID) is 120 A.
- What is the typical on-state drain-source resistance (RDS(on)) of this device?
The typical on-state drain-source resistance is 1.6 mΩ.
- What package type is used for the BUK762R6-40E118?
The package type is D2PAK (TO-263).
- Is this MOSFET suitable for automotive applications?
Yes, it is suitable for automotive and industrial applications due to its high reliability and performance.
- What are the key benefits of using TrenchMOS technology in this MOSFET?
The key benefits include low on-state resistance, high switching speeds, and high efficiency.
- What is the total power dissipation (Ptot) of this device?
The total power dissipation is 293 W.
- Is the BUK762R6-40E118 still in production?
No, this specific model is listed as obsolete.
- Where can I find substitutes for the BUK762R6-40E118?
You can find substitutes on distributor websites such as Digi-Key, Mouser, or through the manufacturer's official website.
- What are some common applications for this type of MOSFET?
Common applications include automotive systems, industrial power supplies, and power management in servers and data centers.
