Overview
The BAS321135, produced by Nexperia USA Inc., is a general-purpose diode designed for a wide range of applications. This diode is part of Nexperia's extensive portfolio of semiconductor components, known for their high quality and reliability. The BAS321135 is housed in a SOD323 package, making it suitable for surface-mount technology (SMT) and offering a compact solution for various electronic designs.
Key Specifications
Parameter | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|
VRRM (Repetitive Peak Reverse Voltage) | - | - | - | 250 | V |
VR (Reverse Voltage) | - | - | - | 200 | V |
IF (Forward Current) | tp = 10 ms; square wave; Tj(init) = 25 °C | - | - | 250 mA | - |
IFSM (Non-Repetitive Peak Forward Current) | tp = 100 µs; square wave; Tj(init) = 25 °C | - | - | 3 A | - |
Ptot (Total Power Dissipation) | Tamb = 25 °C | - | - | 300 mW | - |
Tj (Junction Temperature) | - | - | - | 150 °C | - |
Tstg (Storage Temperature) | - | -65 °C | - | 150 °C | - |
VF (Forward Voltage) | IF = 100 mA; Tj = 25 °C | - | - | 1 V | - |
IR (Reverse Current) | VR = 200 V; Tj = 25 °C | - | - | 100 nA | - |
Cd (Diode Capacitance) | VR = 0 V; f = 1 MHz; Tj = 25 °C | - | - | 2 pF | - |
trr (Reverse Recovery Time) | IF = 30 mA; IR = 30 mA; RL = 100 Ω; IR(meas) = 3 mA; Tj = 25 °C | - | - | 50 ns | - |
Key Features
- Compact Package: The BAS321135 is housed in a SOD323 package, which is a small, surface-mountable package ideal for space-constrained designs.
- High Reverse Voltage: With a repetitive peak reverse voltage (VRRM) of 250 V and a reverse voltage (VR) of 200 V, this diode is suitable for applications requiring high voltage handling.
- Low Forward Voltage Drop: The diode has a low forward voltage drop (VF) of up to 1.25 V at 200 mA, which minimizes power losses in the circuit.
- Low Reverse Current: The diode exhibits a low reverse current (IR) of up to 100 nA at 200 V, indicating minimal leakage current.
- Fast Recovery Time: The reverse recovery time (trr) is up to 50 ns, making it suitable for high-frequency applications.
Applications
- General-Purpose Rectification: The BAS321135 can be used in various rectification circuits where a high reverse voltage and low forward voltage drop are required.
- Power Supplies: It is suitable for use in power supply circuits, including switching power supplies and linear power supplies.
- Automotive Electronics: Given its robust specifications, it can be used in automotive electronics for voltage regulation and rectification.
- Industrial and Consumer Electronics: The diode can be applied in industrial and consumer electronics for general-purpose rectification, voltage clamping, and overvoltage protection.
Q & A
- What is the maximum repetitive peak reverse voltage of the BAS321135?
The maximum repetitive peak reverse voltage (VRRM) is 250 V.
- What is the maximum forward current of the BAS321135?
The maximum forward current (IF) is 250 mA for a pulse duration of 10 ms.
- What is the package type of the BAS321135?
The BAS321135 is housed in a SOD323 package.
- What is the typical forward voltage drop of the BAS321135?
The typical forward voltage drop (VF) is up to 1.25 V at 200 mA.
- What is the reverse recovery time of the BAS321135?
The reverse recovery time (trr) is up to 50 ns.
- What are the storage temperature limits for the BAS321135?
The storage temperature range is from -65 °C to 150 °C.
- Is the BAS321135 suitable for high-frequency applications?
Yes, due to its fast recovery time, it is suitable for high-frequency applications.
- What are some common applications of the BAS321135?
Common applications include general-purpose rectification, power supplies, automotive electronics, and industrial and consumer electronics.
- What is the total power dissipation limit for the BAS321135?
The total power dissipation (Ptot) limit is 300 mW at an ambient temperature of 25 °C.
- Is the BAS321135 RoHS compliant?
Yes, the BAS321135 is RoHS compliant.