Overview
The BFU725F/N1/S115 is an NPN wideband silicon germanium RF transistor designed by NXP USA Inc. for high-speed, low-noise applications. This transistor is packaged in a plastic, 4-pin dual-emitter SOT343F package, making it suitable for a variety of microwave and RF applications. It is particularly noted for its high gain and low noise figure, making it an excellent choice for amplifiers and other high-frequency circuits.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCBO (Collector-Base Voltage) | Open Emitter | - | - | 10 | V |
| VCEO (Collector-Emitter Voltage) | Open Base | - | - | 2.8 | V |
| VEBO (Emitter-Base Voltage) | Open Collector | - | - | 1.0 | V |
| IC (Collector Current) | - | - | 25 | 40 | mA |
| Ptot (Total Power Dissipation) | Tsp ≤ 90 °C | - | - | 136 | mW |
| hFE (DC Current Gain) | IC = 10 mA; VCE = 2 V; Tj = 25 °C | 160 | 280 | 400 | - |
| NF (Noise Figure) | IC = 5 mA; VCE = 2 V; f = 5.8 GHz; ΓS = Γopt; Tamb = 25 °C | - | 0.7 | - | dB |
Key Features
- Low noise high gain microwave transistor
- Noise figure (NF) = 0.7 dB at 5.8 GHz
- High maximum stable gain of 27 dB at 1.8 GHz
- 110 GHz fT silicon germanium technology
- Plastic, 4-pin dual-emitter SOT343F package
Applications
- 2nd LNA stage and mixer stage in DBS LNB’s
- Satellite radio
- Low noise amplifiers for microwave communications systems
- WLAN and CDMA applications
- Analog/digital cordless applications
- Ka band oscillators (DRO’s)
Q & A
- What is the BFU725F/N1/S115 transistor used for? The BFU725F/N1/S115 is used for high-speed, low-noise applications in microwave and RF circuits.
- What is the package type of the BFU725F/N1/S115 transistor? It is packaged in a plastic, 4-pin dual-emitter SOT343F package.
- What is the noise figure of the BFU725F/N1/S115 at 5.8 GHz? The noise figure is 0.7 dB at 5.8 GHz.
- What is the maximum stable gain of the BFU725F/N1/S115 at 1.8 GHz? The maximum stable gain is 27 dB at 1.8 GHz.
- What technology is used in the BFU725F/N1/S115 transistor? It uses 110 GHz fT silicon germanium technology.
- What are some common applications of the BFU725F/N1/S115 transistor? Common applications include 2nd LNA stage and mixer stage in DBS LNB’s, satellite radio, low noise amplifiers for microwave communications systems, WLAN and CDMA applications, and Ka band oscillators (DRO’s).
- What is the collector current limit for the BFU725F/N1/S115 transistor? The collector current limit is 40 mA.
- What is the total power dissipation limit for the BFU725F/N1/S115 transistor? The total power dissipation limit is 136 mW at Tsp ≤ 90 °C.
- What is the DC current gain (hFE) of the BFU725F/N1/S115 transistor? The DC current gain (hFE) is 160 to 400 at IC = 10 mA; VCE = 2 V; Tj = 25 °C.
- Is the BFU725F/N1/S115 sensitive to ElectroStatic Discharge (ESD)? Yes, the device is sensitive to ElectroStatic Discharge (ESD) and requires handling precautions as described in relevant standards.
