BFU550W135
  • Share:

NXP USA Inc. BFU550W135

Manufacturer No:
BFU550W135
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NPN WIDEBAND SILICON RF TRANSIST
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU550W135, produced by NXP USA Inc., is an NPN silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family of transistors and is particularly suited for small signal to medium power applications up to 2 GHz. The transistor is packaged in a plastic, 3-pin SOT323 package, making it compact and suitable for a variety of RF designs.

Key Specifications

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 12 V
Transistor Type NPN -
Power - Max 450 mW
Operating Temperature -40°C to 150°C -
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA, 8V -
Current - Collector (Ic) (Max) 50 mA
Gain 21.5dB -
Frequency - Transition 11GHz -
Noise Figure (dB Typ @ f) 0.75dB @ 900MHz -
Package SOT323 -

Key Features

  • High-speed and low-noise performance, making it suitable for RF applications up to 2 GHz.
  • Compact SOT323 package, ideal for space-constrained designs.
  • High DC current gain (hFE) of 60 at 15mA and 8V, ensuring reliable amplification.
  • Low noise figure of 0.75dB at 900MHz, enhancing signal quality.
  • Wide operating temperature range from -40°C to 150°C, suitable for various environmental conditions.

Applications

  • RF amplifiers and circuits requiring high speed and low noise.
  • Wireless communication systems, including cellular networks and wireless local area networks (WLAN).
  • Radar systems and other high-frequency applications.
  • Automotive and aerospace applications due to its robust performance and wide temperature range.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BFU550W135?

    12V.

  2. What is the typical noise figure of the BFU550W135 at 900MHz?

    0.75dB.

  3. What is the maximum power handling of the BFU550W135?

    450mW.

  4. What is the package type of the BFU550W135?

    SOT323.

  5. What is the operating temperature range of the BFU550W135?

    -40°C to 150°C.

  6. What is the DC current gain (hFE) of the BFU550W135 at 15mA and 8V?

    60.

  7. What are the typical applications of the BFU550W135?

    RF amplifiers, wireless communication systems, radar systems, and automotive/aerospace applications.

  8. Is the BFU550W135 RoHS compliant?
  9. What is the frequency transition of the BFU550W135?

    11GHz.

  10. What is the maximum collector current of the BFU550W135?

    50mA).

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

$0.20
2,952

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BC846BWE6327
BC846BWE6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCP56H115
BCP56H115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
BC846AWT1
BC846AWT1
onsemi
TRANS NPN 65V 0.1A SC70-3
BC847CW/ZLF
BC847CW/ZLF
Nexperia USA Inc.
TRANS SOT323
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
BAS56/DG/B2215
BAS56/DG/B2215
NXP USA Inc.
BAS56 - RECTIFIER DIODE
BC817DPN/DG/B2115
BC817DPN/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
LPC4330FET100Y
LPC4330FET100Y
NXP USA Inc.
IC MCU 32BIT ROMLESS 100TFBGA
MCIMX6Q5EYM10ADR
MCIMX6Q5EYM10ADR
NXP USA Inc.
IC MPU I.MX6Q 1.0GHZ 624FCBGA
AU5780AD/N,112
AU5780AD/N,112
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
PCA9534BS3,118
PCA9534BS3,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16HVQFN
74HC02D/AU118
74HC02D/AU118
NXP USA Inc.
IC GATE NOR 4CH 2-INP 14SO
MWCT1013VLHSTR
MWCT1013VLHSTR
NXP USA Inc.
32BIT256K FLASHSTR CTM
74LV165DB118
74LV165DB118
NXP USA Inc.
NOW NEXPERIA 74LV165DB - PARALLE
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC
PN5120A0HN1/C1,118
PN5120A0HN1/C1,118
NXP USA Inc.
IC RFID RDR/TRAN 13.56MZ 32HVQFN