BFU550W135
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NXP USA Inc. BFU550W135

Manufacturer No:
BFU550W135
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NPN WIDEBAND SILICON RF TRANSIST
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU550W135, produced by NXP USA Inc., is an NPN silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family of transistors and is particularly suited for small signal to medium power applications up to 2 GHz. The transistor is packaged in a plastic, 3-pin SOT323 package, making it compact and suitable for a variety of RF designs.

Key Specifications

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 12 V
Transistor Type NPN -
Power - Max 450 mW
Operating Temperature -40°C to 150°C -
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA, 8V -
Current - Collector (Ic) (Max) 50 mA
Gain 21.5dB -
Frequency - Transition 11GHz -
Noise Figure (dB Typ @ f) 0.75dB @ 900MHz -
Package SOT323 -

Key Features

  • High-speed and low-noise performance, making it suitable for RF applications up to 2 GHz.
  • Compact SOT323 package, ideal for space-constrained designs.
  • High DC current gain (hFE) of 60 at 15mA and 8V, ensuring reliable amplification.
  • Low noise figure of 0.75dB at 900MHz, enhancing signal quality.
  • Wide operating temperature range from -40°C to 150°C, suitable for various environmental conditions.

Applications

  • RF amplifiers and circuits requiring high speed and low noise.
  • Wireless communication systems, including cellular networks and wireless local area networks (WLAN).
  • Radar systems and other high-frequency applications.
  • Automotive and aerospace applications due to its robust performance and wide temperature range.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BFU550W135?

    12V.

  2. What is the typical noise figure of the BFU550W135 at 900MHz?

    0.75dB.

  3. What is the maximum power handling of the BFU550W135?

    450mW.

  4. What is the package type of the BFU550W135?

    SOT323.

  5. What is the operating temperature range of the BFU550W135?

    -40°C to 150°C.

  6. What is the DC current gain (hFE) of the BFU550W135 at 15mA and 8V?

    60.

  7. What are the typical applications of the BFU550W135?

    RF amplifiers, wireless communication systems, radar systems, and automotive/aerospace applications.

  8. Is the BFU550W135 RoHS compliant?
  9. What is the frequency transition of the BFU550W135?

    11GHz.

  10. What is the maximum collector current of the BFU550W135?

    50mA).

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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