Overview
The BFU530W,115 is an NPN wideband silicon RF transistor produced by NXP USA Inc. This transistor is designed for high-speed, low-noise applications and is part of the BFU5 family of transistors. It is packaged in a plastic, 3-pin SOT323 package, making it suitable for small signal to medium power applications up to 2 GHz. The BFU530W is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding environments.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCB (Collector-Base Voltage) | Open Emitter | - | - | 24 | V |
| VCE (Collector-Emitter Voltage) | Open Base | - | - | 12 | V |
| VCE (Collector-Emitter Voltage) | Shorted Base | - | - | 24 | V |
| VEB (Emitter-Base Voltage) | Open Collector | - | - | 2 | V |
| IC (Collector Current) | - | - | 10 | 40 | mA |
| Ptot (Total Power Dissipation) | Tsp ≤ 87°C | - | - | 450 | mW |
| hFE (DC Current Gain) | IC = 10 mA; VCE = 8 V | 60 | 95 | 200 | - |
| Cc (Collector Capacitance) | VCB = 8 V; f = 1 MHz | - | 0.68 | - | pF |
| fT (Transition Frequency) | IC = 15 mA; VCE = 8 V; f = 900 MHz | - | 11 | - | GHz |
Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified for automotive and other demanding applications
- Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
- Maximum stable gain 18.5 dB at 900 MHz
- 11 GHz fT silicon technology
Applications
- Applications requiring high supply voltages and high breakdown voltages
- Broadband amplifiers up to 2 GHz
- Low noise amplifiers for ISM applications
- ISM band oscillators
Q & A
- What is the package type of the BFU530W transistor?
The BFU530W transistor is packaged in a plastic, 3-pin SOT323 package. - What is the maximum collector-emitter voltage for the BFU530W?
The maximum collector-emitter voltage (VCE) is 12 V with the base open and 24 V with the base shorted. - What is the maximum collector current for the BFU530W?
The maximum collector current (IC) is 40 mA. - What is the total power dissipation limit for the BFU530W?
The total power dissipation (Ptot) is limited to 450 mW at Tsp ≤ 87°C. - What is the DC current gain (hFE) of the BFU530W?
The DC current gain (hFE) is between 60 and 200 at IC = 10 mA and VCE = 8 V. - What is the transition frequency (fT) of the BFU530W?
The transition frequency (fT) is 11 GHz at IC = 15 mA, VCE = 8 V, and f = 900 MHz. - Is the BFU530W suitable for automotive applications?
Yes, the BFU530W is AEC-Q101 qualified, making it suitable for automotive and other demanding applications. - What are the typical applications of the BFU530W?
The BFU530W is typically used in broadband amplifiers up to 2 GHz, low noise amplifiers for ISM applications, and ISM band oscillators. - What is the minimum noise figure (NFmin) of the BFU530W?
The minimum noise figure (NFmin) is 0.6 dB at 900 MHz. - What is the maximum stable gain of the BFU530W?
The maximum stable gain is 18.5 dB at 900 MHz.
