BCV61A,215
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NXP Semiconductors BCV61A,215

Manufacturer No:
BCV61A,215
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA BCV61A - SMALL SIGNAL B
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The BCV61A,215 is an NPN general-purpose double transistor produced by Nexperia (formerly part of NXP Semiconductors). This component is housed in a small SOT143B surface-mounted device (SMD) plastic package. It is designed for applications requiring matched pairs of transistors, making it suitable for various electronic circuits where temperature-independent operation is crucial.

Key Specifications

ParameterConditionsMinTypMaxUnit
Collector-Base Voltage (VCBO)Open emitter--30V
Collector-Emitter Voltage (VCEO)Open base--30V
Emitter-Base Voltage (VEBO)VCE = 0 V--6V
Collector Current (IC)---100mA
Peak Collector Current (ICM)---200mA
Peak Base Current (IBM)---200mA
Total Power Dissipation (Ptot)Tamb ≤ 25 °C--250mW
Junction Temperature (Tj)---150°C
Ambient Temperature (Tamb)--65-150°C
Storage Temperature (Tstg)--65-150°C
DC Current Gain (hFE)VCE = 5 V; IC = 2 mA110-800-

Key Features

  • Low current capability (maximum 100 mA)
  • Low voltage operation (maximum 30 V)
  • Matched pairs for precise current matching
  • Small SOT143B surface-mounted device (SMD) plastic package
  • Temperature-independent operation, making it suitable for applications where working points are independent of temperature

Applications

  • Current mirrors and other circuits requiring matched transistor pairs
  • Applications with working points independent of temperature
  • General-purpose switching and amplification in electronic circuits

Q & A

  1. What is the maximum collector current of the BCV61A,215 transistor?
    The maximum collector current is 100 mA.
  2. What is the maximum collector-emitter voltage for this transistor?
    The maximum collector-emitter voltage is 30 V.
  3. What is the package type of the BCV61A,215?
    The package type is SOT143B.
  4. What is the DC current gain (hFE) range for the BCV61A,215?
    The DC current gain (hFE) ranges from 110 to 800.
  5. What are the typical applications of the BCV61A,215 transistor?
    Typical applications include current mirrors and other circuits requiring matched transistor pairs, as well as general-purpose switching and amplification.
  6. Is the BCV61A,215 RoHS compliant?
    Yes, the BCV61A,215 is RoHS compliant and lead-free.
  7. What is the junction temperature limit for the BCV61A,215?
    The junction temperature limit is 150 °C.
  8. What is the total power dissipation limit for the BCV61A,215 at ambient temperatures up to 25 °C?
    The total power dissipation limit is 250 mW.
  9. How many leads does the BCV61A,215 have?
    The BCV61A,215 has 4 leads.
  10. What is the emitter-base voltage limit for the BCV61A,215?
    The emitter-base voltage limit is 6 V.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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In Stock

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Similar Products

Part Number BCV61A,215 BCV61C,215
Manufacturer NXP Semiconductors NXP Semiconductors
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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