BC847QAPN147
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NXP USA Inc. BC847QAPN147

Manufacturer No:
BC847QAPN147
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847QAPN147 is a bipolar junction transistor (BJT) array produced by NXP USA Inc. This component is designed to integrate both NPN and PNP transistors in a single package, making it a versatile solution for various electronic applications. The BC847QAPN147 is part of NXP's extensive range of discrete semiconductor products, known for their reliability and performance.

Key Specifications

ParameterValueUnit
Transistor Type1 NPN, 1 PNP-
Collector-Base Voltage (Vcbo)50V
Collector-Emitter Voltage (Vceo)45V
Emitter-Base Voltage (Vebo)6V
Collector Current (Ic)100mA
Peak Collector Current (Icm)200mA
Power Dissipation (Pd)350mW
Operating Frequency100MHz
Package TypeDFN1010B-6 (Surface Mount)-

Key Features

  • Integrated NPN and PNP transistors in a single package, enhancing design flexibility and reducing component count.
  • High collector current and peak collector current capabilities, suitable for a variety of applications requiring moderate to high current handling.
  • Low power dissipation, making it energy-efficient and suitable for battery-powered devices.
  • High operating frequency, supporting applications that require high-speed switching.
  • Surface mount package (DFN1010B-6), facilitating easy integration into modern PCB designs.

Applications

The BC847QAPN147 is versatile and can be used in a wide range of electronic applications, including:

  • General-purpose amplifiers and switches.
  • Audio and video circuits.
  • Automotive and industrial control systems.
  • Consumer electronics such as home appliances and gadgets.
  • Communication devices and networking equipment.

Q & A

  1. What is the BC847QAPN147?
    The BC847QAPN147 is a bipolar junction transistor (BJT) array produced by NXP USA Inc., containing one NPN and one PNP transistor in a single package.
  2. What are the key specifications of the BC847QAPN147?
    Key specifications include a collector-base voltage of 50V, collector-emitter voltage of 45V, emitter-base voltage of 6V, collector current of 100mA, and power dissipation of 350mW.
  3. What package type does the BC847QAPN147 use?
    The BC847QAPN147 uses a DFN1010B-6 surface mount package.
  4. What are the typical applications of the BC847QAPN147?
    Typical applications include general-purpose amplifiers, audio and video circuits, automotive and industrial control systems, consumer electronics, and communication devices.
  5. What is the operating frequency of the BC847QAPN147?
    The operating frequency of the BC847QAPN147 is up to 100 MHz.
  6. How many transistors are integrated in the BC847QAPN147?
    The BC847QAPN147 integrates one NPN and one PNP transistor.
  7. What is the peak collector current of the BC847QAPN147?
    The peak collector current is 200 mA.
  8. Is the BC847QAPN147 suitable for high-speed applications?
    Yes, with an operating frequency of up to 100 MHz, it is suitable for high-speed applications.
  9. Where can I purchase the BC847QAPN147?
    The BC847QAPN147 can be purchased from electronic component distributors such as Digi-Key.
  10. What is the power dissipation of the BC847QAPN147?
    The power dissipation is 350 mW.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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