BAW56/LF1235
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NXP USA Inc. BAW56/LF1235

Manufacturer No:
BAW56/LF1235
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
RECTIFIER DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAW56/LF1235 is a high-speed switching diode produced by NXP USA Inc. This component is part of the BAW56 series, known for its fast switching speed and low capacitance, making it suitable for a variety of high-frequency applications. The diode is packaged in a small SOT-23 outline, which is lead-free and RoHS compliant, ensuring environmental sustainability and ease of integration into modern electronic designs.

Key Specifications

Parameter Value Unit
Diode Type Small Signal
Voltage, Vrrm 85 V
Current, If AV 125 mA
Current, Ifsm 4 A
Time, trr Typ 4 ns
Voltage, Vf Max 1.25 V
Reverse Leakage Current (IR) 1 μA (max)
Junction Capacitance (CJ) 2 pF (max)
Package SOT-23
Operating Temperature Range -55 to +150 °C

Key Features

  • High Switching Speed: Reverse recovery time (trr) of ≤ 4 ns, making it ideal for high-frequency applications.
  • Low Capacitance: Junction capacitance (CJ) of ≤ 2 pF, reducing the impact on high-frequency circuits.
  • Low Leakage Current: Reverse leakage current (IR) of ≤ 1 μA, ensuring minimal current loss.
  • Small SMD Package: SOT-23 package, which is lead-free and RoHS compliant, facilitating easy integration into modern designs.
  • High Temperature Soldering: Guaranteed for high temperature soldering up to 260°C for 10 seconds.
  • Green Compound: Halogen-free with a suffix 'G' on the date code, ensuring environmental sustainability.

Applications

The BAW56/LF1235 is suitable for various applications requiring high-speed switching and low capacitance, such as:

  • High-frequency signal processing and switching circuits.
  • RF and microwave applications.
  • Automotive and industrial control systems.
  • Consumer electronics requiring fast switching diodes.
  • Telecommunication equipment.

Q & A

  1. What is the typical reverse recovery time (trr) of the BAW56/LF1235?

    The typical reverse recovery time (trr) is ≤ 4 ns.

  2. What is the maximum forward voltage (Vf) of the BAW56/LF1235?

    The maximum forward voltage (Vf) is 1.25 V.

  3. What is the package type of the BAW56/LF1235?

    The package type is SOT-23.

  4. Is the BAW56/LF1235 RoHS compliant?

    Yes, the BAW56/LF1235 is lead-free and RoHS compliant.

  5. What is the operating temperature range of the BAW56/LF1235?

    The operating temperature range is -55 to +150 °C.

  6. What is the junction capacitance (CJ) of the BAW56/LF1235?

    The junction capacitance (CJ) is ≤ 2 pF.

  7. What is the maximum repetitive peak reverse voltage (Vrrm) of the BAW56/LF1235?

    The maximum repetitive peak reverse voltage (Vrrm) is 85 V.

  8. What is the maximum average forward current (If AV) of the BAW56/LF1235?

    The maximum average forward current (If AV) is 125 mA.

  9. Is the BAW56/LF1235 suitable for high-frequency applications?

    Yes, it is suitable due to its high switching speed and low capacitance.

  10. What is the weight of the BAW56/LF1235?

    The weight is approximately 0.008 grams.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
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Similar Products

Part Number BAW56/LF1235 BAW56/LF1215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Diode Type - -
Voltage - DC Reverse (Vr) (Max) - -
Current - Average Rectified (Io) - -
Voltage - Forward (Vf) (Max) @ If - -
Speed - -
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr - -
Capacitance @ Vr, F - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -
Operating Temperature - Junction - -

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