BAS16J/SG115
  • Share:

NXP USA Inc. BAS16J/SG115

Manufacturer No:
BAS16J/SG115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
RECTIFIER DIODE, 0.25A, 100V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16J is a high-speed switching diode produced by NXP USA Inc., now part of Nexperia. This diode is encapsulated in a small and flat lead SOD323F Surface-Mounted Device (SMD) plastic package, making it ideal for applications where space is limited. The BAS16J is designed for high-speed switching with low capacitance and low leakage current, making it suitable for a wide range of electronic designs.

Key Specifications

Parameter Conditions Min Max Unit
VRRM (Repetitive Peak Reverse Voltage) - - 100 V
VR (Reverse Voltage) - - 100 V
IF (Forward Current) tp = 1 µs; square wave; Tj(init) = 25 °C - 250 mA
IFSM (Non-Repetitive Peak Forward Current) tp = 1 s; square wave; Tj(init) = 25 °C - 0.5 A
IFRM (Repetitive Peak Forward Current) tp ≤ 0.5 ms; δ ≤ 0.25 - 500 mA
trr (Reverse Recovery Time) - - 4 ns
Cd (Diode Capacitance) - - 1.5 pF
Tj (Junction Temperature) - - 150 °C
Tamb (Ambient Temperature) - -65 150 °C

Key Features

  • High-Speed Switching: The BAS16J features a fast reverse recovery time (trr ≤ 4 ns), making it suitable for high-frequency applications.
  • Low Capacitance: With a diode capacitance of 1.5 pF, this diode minimizes the impact on high-speed circuits.
  • Low Leakage Current: The diode has a low leakage current, which is beneficial for reducing power consumption and improving overall circuit efficiency.
  • Compact Package: Encapsulated in the SOD323F package, this diode is ideal for space-constrained designs.
  • High Forward Current Capability: The diode can handle forward currents up to 250 mA, making it versatile for various applications.

Applications

The BAS16J high-speed switching diode is suitable for a wide range of applications across various industries, including:

  • Automotive Systems: Although the BAS16J is not automotive qualified, it can be used in general automotive electronics where high-speed switching is required.
  • Industrial Electronics: Ideal for high-speed switching in industrial control systems, power supplies, and other industrial applications.
  • Consumer Electronics: Used in consumer devices such as mobile phones, tablets, and other portable electronics where space and speed are critical.
  • Power Supplies and Converters: Suitable for use in switching power supplies, DC-DC converters, and other power management circuits.

Q & A

  1. What is the maximum reverse voltage of the BAS16J diode?

    The maximum reverse voltage (VR) of the BAS16J diode is 100 V.

  2. What is the reverse recovery time of the BAS16J diode?

    The reverse recovery time (trr) of the BAS16J diode is ≤ 4 ns.

  3. What is the maximum forward current of the BAS16J diode?

    The maximum forward current (IF) of the BAS16J diode is 250 mA for a pulse duration of 1 µs.

  4. What is the package type of the BAS16J diode?

    The BAS16J diode is encapsulated in a SOD323F Surface-Mounted Device (SMD) plastic package.

  5. Is the BAS16J diode automotive qualified?

    No, the BAS16J diode is not automotive qualified. For automotive applications, alternative products with automotive qualification should be considered.

  6. What is the maximum junction temperature of the BAS16J diode?

    The maximum junction temperature (Tj) of the BAS16J diode is 150 °C).

  7. What is the typical thermal resistance from junction to ambient of the BAS16J diode?

    The thermal resistance from junction to ambient (Rth(j-a)) of the BAS16J diode is up to 230 K/W).

  8. Can the BAS16J diode be used in high-frequency applications?

    Yes, the BAS16J diode is suitable for high-frequency applications due to its low capacitance and fast reverse recovery time).

  9. How can I order samples of the BAS16J diode?

    Samples of the BAS16J diode can be ordered via the Nexperia sales organization).

  10. Where can I find more detailed information about the BAS16J diode?

    More detailed information, including the full data sheet, can be found on the Nexperia website or through local Nexperia sales offices).

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 80 V
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
518

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23

Related Product By Brand

BZX84-C13/DG/B3215
BZX84-C13/DG/B3215
NXP USA Inc.
DIODE ZENER
BC807-25/L215
BC807-25/L215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
SAA7706H/N210,518
SAA7706H/N210,518
NXP USA Inc.
IC CAR RADIO DSP 80-QFP
LPC1823JET100E
LPC1823JET100E
NXP USA Inc.
IC MCU 32BIT 512KB FLSH 100TFBGA
SPC5777CCK3MME3
SPC5777CCK3MME3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 416MAPBGA
LS1028AXN7PQA
LS1028AXN7PQA
NXP USA Inc.
LS1028A-1500 XT NO SEC
74HCT4851PW/S400118
74HCT4851PW/S400118
NXP USA Inc.
SINGLE-ENDED MUX, 8 CHANNEL
AU5780AD/N,112
AU5780AD/N,112
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
PCAL6416AER
PCAL6416AER
NXP USA Inc.
PARALLEL I/O PORT, 16 I/O, CMOS,
SC28L202A1DGG/G:11
SC28L202A1DGG/G:11
NXP USA Inc.
IC UART DUAL W/FIFO 56-TSSOP
74HC240D/C118
74HC240D/C118
NXP USA Inc.
IC BUFFER INVERT 6V 20SO
HEF4093BT/C4118
HEF4093BT/C4118
NXP USA Inc.
NAND GATE