PBSS4140U,115
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Nexperia USA Inc. PBSS4140U,115

Manufacturer No:
PBSS4140U,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS4140U,115 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for a wide range of applications requiring high current capabilities and low collector-emitter saturation voltage. It features improved device reliability due to reduced heat generation, making it suitable for various electronic circuits.

Key Specifications

Parameter Value Unit
Transistor Type NPN -
Voltage - Collector Emitter Breakdown (Max) 40 V
Current - Collector (Ic) (Max) 1 A
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A mV
Current - Collector Cutoff (Max) 100nA A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA, 5V -
Power - Max 350mW mW
Frequency - Transition 150MHz MHz
Operating Temperature 150°C (TJ) °C
Mounting Type Surface Mount -
Package / Case SOT-323-3 -

Key Features

  • Low collector-emitter saturation voltage, reducing heat generation and improving device reliability.
  • High current capabilities, making it suitable for applications requiring significant current handling.
  • High DC current gain (hFE) of 300 at 500mA and 5V, ensuring efficient operation.
  • Transition frequency of 150MHz, suitable for high-frequency applications.
  • Surface mount SOT-323-3 package, facilitating easy integration into modern electronic designs.

Applications

The PBSS4140U,115 is versatile and can be used in a variety of applications, including:

  • General-purpose switching and amplification circuits.
  • Automotive and industrial control systems.
  • Consumer electronics such as audio equipment and home appliances.
  • High-frequency applications due to its transition frequency of 150MHz.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the PBSS4140U,115?

    The maximum collector-emitter breakdown voltage is 40V.

  2. What is the maximum collector current (Ic) of the PBSS4140U,115?

    The maximum collector current is 1A.

  3. What is the typical DC current gain (hFE) of the PBSS4140U,115?

    The typical DC current gain is 300 at 500mA and 5V.

  4. What is the transition frequency of the PBSS4140U,115?

    The transition frequency is 150MHz.

  5. What is the maximum operating temperature of the PBSS4140U,115?

    The maximum operating temperature is 150°C (TJ).

  6. What package type does the PBSS4140U,115 use?

    The PBSS4140U,115 uses the SOT-323-3 surface mount package.

  7. Is the PBSS4140U,115 RoHS compliant?

    Yes, the PBSS4140U,115 is RoHS compliant.

  8. What are some common applications for the PBSS4140U,115?

    Common applications include general-purpose switching and amplification circuits, automotive and industrial control systems, and consumer electronics.

  9. What is the maximum power dissipation of the PBSS4140U,115?

    The maximum power dissipation is 350mW.

  10. Does the PBSS4140U,115 have any environmental restrictions?

    No, this semiconductor product has an indefinite environmental friendly use period (EFUP).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 500mA, 5V
Power - Max:350 mW
Frequency - Transition:150MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Same Series
PBSS4140U,135
PBSS4140U,135
TRANS NPN 40V 1A SOT323

Similar Products

Part Number PBSS4140U,115 PBSS5140U,115 PBSS4160U,115 PBSS4140U,135 PBSS4140V,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Active Active Obsolete
Transistor Type NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 750 mA 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 60 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A 280mV @ 100mA, 1A 500mV @ 100mA, 1A 440mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA 100nA (ICBO) 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA, 5V 300 @ 100mA, 5V 200 @ 500mA, 5V 300 @ 500mA, 5V 300 @ 500mA, 5V
Power - Max 350 mW 350 mW 415 mW 350 mW 500 mW
Frequency - Transition 150MHz 150MHz 220MHz 150MHz 150MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SOT-563, SOT-666
Supplier Device Package SOT-323 SOT-323 SOT-323 SOT-323 SOT-666

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