PBSS4032SPN,115
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Nexperia USA Inc. PBSS4032SPN,115

Manufacturer No:
PBSS4032SPN,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN/PNP 30V 5.7A/4.8A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS4032SPN,115 is a bipolar transistor produced by Nexperia USA Inc. This component is part of Nexperia's extensive range of discrete semiconductor products. Although it is currently listed as obsolete and no longer manufactured, it was designed to offer high performance and reliability in various electronic applications.

Key Specifications

Parameter Value
Type NPN Transistor
Collector-Base Voltage (Vcb) 30 V
Collector-Emitter Voltage (Vce) 30 V
Emitter-Base Voltage (Veb) 5 V
Collector Current (Ic) 4.7 A
Collector-Emitter Saturation Voltage (Vce(sat)) Very low
Switching Time Optimized

Key Features

The PBSS4032SPN,115 transistor is characterized by several key features:

  • Low Collector-Emitter Saturation Voltage (Vce(sat)): This feature enhances the efficiency of the transistor by reducing power losses during operation.
  • Optimized Switching Time: The transistor is designed for fast switching, making it suitable for applications requiring quick response times.
  • High Collector Current Capability: With a collector current of up to 4.7 A, this transistor can handle high current requirements.

Applications

The PBSS4032SPN,115 transistor, although obsolete, was suitable for a variety of applications including:

  • Power Amplifiers: Due to its high collector current and low Vce(sat), it was ideal for power amplifier circuits.
  • Switching Circuits: The optimized switching time made it a good choice for switching applications such as motor control and power supplies.
  • Automotive Electronics: It could be used in automotive systems requiring high reliability and performance.

Q & A

  1. What is the type of the PBSS4032SPN,115 transistor?

    The PBSS4032SPN,115 is an NPN transistor.

  2. What is the maximum collector current of the PBSS4032SPN,115?

    The maximum collector current is 4.7 A.

  3. What is the collector-emitter saturation voltage (Vce(sat)) of the PBSS4032SPN,115?

    The collector-emitter saturation voltage is very low.

  4. Is the PBSS4032SPN,115 still in production?

    No, the PBSS4032SPN,115 is listed as obsolete and is no longer manufactured.

  5. What are some typical applications for the PBSS4032SPN,115 transistor?

    Typical applications include power amplifiers, switching circuits, and automotive electronics.

  6. What is the maximum collector-base voltage (Vcb) of the PBSS4032SPN,115?

    The maximum collector-base voltage is 30 V.

  7. What is the emitter-base voltage (Veb) of the PBSS4032SPN,115?

    The emitter-base voltage is 5 V.

  8. Why is the switching time of the PBSS4032SPN,115 important?

    The optimized switching time makes the transistor suitable for applications requiring fast response times.

  9. Where can I find detailed specifications for the PBSS4032SPN,115?

    Detailed specifications can be found in the datasheet available from Nexperia or authorized distributors.

  10. What are the benefits of the low Vce(sat) in the PBSS4032SPN,115?

    The low Vce(sat) reduces power losses during operation, enhancing the efficiency of the transistor.

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):5.7A, 4.8A
Voltage - Collector Emitter Breakdown (Max):30V
Vce Saturation (Max) @ Ib, Ic:450mV @ 300mA, 6A, 510mV @ 250mA, 5A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 2A, 2V / 150 @ 2A, 2V
Power - Max:2.3W
Frequency - Transition:140MHz, 115MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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In Stock

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Similar Products

Part Number PBSS4032SPN,115 PBSS4032SN,115 PBSS4032SP,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN, PNP 2 NPN (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 5.7A, 4.8A 5.7A 4.8A
Voltage - Collector Emitter Breakdown (Max) 30V 30V 30V
Vce Saturation (Max) @ Ib, Ic 450mV @ 300mA, 6A, 510mV @ 250mA, 5A 450mV @ 300mA, 6A 510mV @ 250mA, 5A
Current - Collector Cutoff (Max) 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2A, 2V / 150 @ 2A, 2V 250 @ 2A, 2V 150 @ 2A, 2V
Power - Max 2.3W 2.3W 2.3W
Frequency - Transition 140MHz, 115MHz 140MHz 115MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO

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