PBHV9115T,215
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Nexperia USA Inc. PBHV9115T,215

Manufacturer No:
PBHV9115T,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 150V 1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBHV9115T,215 is a high-performance PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for a wide range of applications requiring high current and voltage handling capabilities. It is packaged in a compact SOT-23-3 format, making it suitable for space-constrained designs.

Key Specifications

Parameter Value
Transistor Polarity PNP
Collector-Emitter Voltage (VCEO) 150 V
Emitter-Base Voltage (VEB0) 6 V
Continuous Collector Current (IC) 1 A
Power Dissipation (Pd) 300 mW
Gain Bandwidth Product (fT) 115 MHz
Minimum Operating Temperature -55°C
Maximum Operating Temperature +150°C
DC Collector/Base Gain (hfe) 100 at -50 mA, -10 V
Package SOT-23-3
Mounting Style SMD/SMT

Key Features

  • High collector-emitter voltage of 150 V, making it suitable for high-voltage applications.
  • Continuous collector current of 1 A, ensuring reliable operation in current-intensive applications.
  • Compact SOT-23-3 package, ideal for space-constrained designs.
  • Surface mount technology (SMD/SMT) for easy integration into modern PCBs.
  • Wide operating temperature range from -55°C to +150°C, enhancing reliability in various environmental conditions.

Applications

  • Automotive electronics: Suitable for various automotive applications due to its high voltage and current handling capabilities.
  • Industrial control systems: Used in motor control, power supplies, and other industrial automation systems.
  • Consumer electronics: Found in audio amplifiers, power supplies, and other consumer electronic devices.
  • Medical devices: Used in medical equipment requiring high reliability and performance.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the PBHV9115T,215 transistor?

    The collector-emitter voltage (VCEO) of the PBHV9115T,215 transistor is 150 V.

  2. What is the maximum continuous collector current (IC) of this transistor?

    The maximum continuous collector current (IC) is 1 A.

  3. What is the package type of the PBHV9115T,215 transistor?

    The package type is SOT-23-3.

  4. What is the operating temperature range of this transistor?

    The operating temperature range is from -55°C to +150°C.

  5. Is the PBHV9115T,215 transistor RoHS compliant?

    Yes, the PBHV9115T,215 transistor is RoHS compliant.

  6. What is the gain bandwidth product (fT) of this transistor?

    The gain bandwidth product (fT) is 115 MHz.

  7. What is the power dissipation (Pd) of the PBHV9115T,215 transistor?

    The power dissipation (Pd) is 300 mW.

  8. What are some common applications of the PBHV9115T,215 transistor?

    Common applications include automotive electronics, industrial control systems, consumer electronics, and medical devices.

  9. Is the PBHV9115T,215 transistor suitable for high-voltage applications?

    Yes, it is suitable for high-voltage applications due to its 150 V collector-emitter voltage rating.

  10. What is the DC collector/base gain (hfe) of this transistor?

    The DC collector/base gain (hfe) is 100 at -50 mA, -10 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):150 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 100mA, 500mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 10V
Power - Max:300 mW
Frequency - Transition:115MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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In Stock

$0.47
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Similar Products

Part Number PBHV9115T,215 PBHV8115T,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 150 V 150 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 100mA, 500mA 350mV @ 200mA, 1A
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 10V 50 @ 500mA, 10V
Power - Max 300 mW 300 mW
Frequency - Transition 115MHz 30MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

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